Search results for "NET"
showing 10 items of 55461 documents
Composition dependence ofSi1−xGexsputter yield
2005
Sputtering yields have been measured for unstrained ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ $(x=0--1)$ alloys when bombarded with ${\mathrm{Ar}}^{+}$ ions within the linear cascade regime. Nonlinear S-shape dependence of the sputter yield as a function of the alloy composition has been revealed. The dependence is analyzed within the frameworks of the cascade theory conventionally accepted to be the most systematic to date theoretical approach in sputtering. In view of a linear composition dependence predicted for the sputter yield by the cascade theory adapted for polyatomic substrates, the nonlinearity observed in our experiments is shown to be related to the alloying effect on…
Normal and relaxor ferroelectric behavior in the Ba1−xPbx(Ti1−yZry)O3 solid solutions
2017
Abstract Polycrystalline samples of Ba 1−x Pb x (Ti 1−y Zr y )O 3 (BPTZ) with x = 0.025 & 0.1 and 0.10 ≤ y ≤ 0.50 have been synthesized by high-temperature solid-state reaction technique. X-ray diffraction reveals the formation of single phase with tetragonal or cubic structure. Dielectric investigations were carried out in the temperature range from 80 to 445 K with frequencies range from 10 2 to 10 6 Hz. A broad dielectric anomaly coupled with the shift of dielectric maxima toward a higher temperature with increasing frequency indicates either a diffuse phase transition or relaxor behavior in some of these ceramics. Whatever lead content, when zirconium is substituted by titanium, T C an…
Real-time signal processing in embedded systems
2016
International audience
Run-time scalable NoC for FPGA based virtualized IPs
2017
The integration of virtualized FPGA-based hardware accelerators in a cloud computing is progressing from time to time. As the FPGA has limited resources, the dynamic partial reconfiguration capability of the FPGA is considered to share resources among different virtualized IPs during runtime. On the other hand, the NoC is a promising solution for communication among virtualized FPGA-based IPs. However, not all the virtualized regions of the FPGA will be active all the time. When there is no demand for virtualized IPs, the virtualized regions are loaded with blank bitstreams to save power. However, keeping active the idle components of the NoC connecting with the idle virtualized regions is …
Very Long Term Stabilization of a 2D Magnet down to the Monolayer for Device Integration
2020
2D materials have recently demonstrated a strong potential for spintronic applications. This has been further reinforced by the discovery of ferromagnetic 2D layers. Nevertheless, the fragility of ...
The biased disc of an electron cyclotron resonance ion source as a probe of instability-induced electron and ion losses
2019
International audience; Electron Cyclotron Resonance Ion Source (ECRIS) plasmas are prone to kinetic instabilities resulting in loss of electron and ion confinement. It is demonstrated that the biased disk of an ECRIS can be used as a probe to quantify such instability-induced electron and ion losses occurring in less than 10 µs. The qualitative interpretation of the data is supported by the measurement of the energy spread of the extracted ion beams implying a transient plasma potential >1.5 kV during the instability. A parametric study of the electron losses combined with electron tracking simulations allows for estimating the fraction of electrons expelled in each instability event to be…
A Local Study of the Transport Mechanisms in MoS2 Layers for Magnetic Tunnel Junctions
2018
MoS2-based vertical spintronic devices have attracted an increasing interest thanks to theoretical predictions of large magnetoresistance signals. However, experimental performances are still far from expectations. Here, we carry out the local electrical characterization of thin MoS2 flakes in a Co/Al2O3/MoS2 structure through conductive tip AFM measurements. We show that thin MoS2 presents a metallic behavior with a strong lateral transport contribution that hinders the direct tunnelling through thin layers. Indeed, no resistance dependence is observed with the flake thickness. These findings reveal a spin depolarization source in the MoS2-based spin valves, thus pointing to possible solut…
High-pressure x-ray-absorption study of GaSe
2002
The III-VI layered semiconductor InSe has been studied by high-pressure single crystal x-ray absorption spectroscopy up to a maximum pressure of 14 GPa. The In-Se distance has been measured in both the low- pressure layered phase and the high-pressure NaCl phase. The bond compressibility in the layered phase is lower than the ``a'' crystallographic parameter compressibility, which implies an increase of the angle between the In-Se bond and the layer plane. Under plausible hypothesis, a description of the evolution of the whole structure with pressure is given. In particular, the intralayer distance is observed to increase with increasing pressure. A plausible precursor defect and a simple m…
Computer-aided analysis and design procedure for rotating induction machine magnetic circuits and windings
2018
The aim of this study is to present a new, accurate, and user-friendly software procedure for the analysis and rapid design of rotating induction machine windings, considering both the electric and the magnetic specifications of the machine itself. This procedure is a valid aid for quick first stage design without the necessity of using finite element method (FEM)-based design procedures. FEM can be used in a second design phase in order to refine the first stage results. The design procedure is hereafter outlined and some examples show its capability.
Influence of the MgO barrier thickness on the lifetime characteristics of magnetic tunnelling junctions for sensors
2016
Magnetic tunnelling junctions increasingly enter the market for magnetic sensor applications. Thus, technological parameters such as the lifetime characteristics become more and more important. Here, an analysis of the lifetime characteristics of magnetic tunnelling junctions using the Weibull statistical distribution for CoFeB/MgO/CoFeB junctions is presented. The Weibull distribution is governed by two parameters, the characteristic lifetime η of the population and the shape parameter β, which gives information about the presence of an infant mortality. The suitability of the Weibull distribution is demonstrated for the description of dielectric breakdown processes in MgO-based tunnelling…