Search results for "NICS"

Half-Heusler compounds: novel materials for energy and spintronic applications

2012

Half-Heusler compounds are an impressive class of materials with a huge potential for different applications such as future energy applications and for spintronics. The semiconducting Heusler compounds can be identified by the number of valence electrons. The band gap can be tuned between 0 and 4 eV by the electronegativity difference of the constituents. Magnetism can be introduced in these compounds by using rare-earth elements, manganese or ‘electron’ doping. Thus, there is a great interest in the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. The combination of different properties such as superconductivity and topological edge states leads to new multifunct…

SiC Power Switches Evaluation for Space Applications Requirements

2016

We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology push for a new generation of space electronics units. Silicon devices qualified for space systems above 600V for the switches and 1200V for the rectifiers are not available due to performances limitations of Si. Among the typical static and dynamic characterization, we have performed temperature and power stress and HTRB tests. More remarkably, we h…

Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity

2016

This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

2019

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…

Space Charges and Partial Discharges Simultaneous Measurements under DC Stress

2016

In the field of HVDC, the main causes of insulation aging are due to the space charge and PD phenomena. In particular, the purpose of the present work is to verify a possibility to measure simultaneously the space charge and the PDs under DC stress in order to evaluate the correlation between both phenomena. The space charge was measured by using a modified PEA cell and PDs were measured by using a novel wireless sensor system. The space charge profile and the PD pulses carried out simultaneously have been reported and discussed.

Selective Band Gap to Suppress the Spurious Acoustic Mode in Film Bulk Acoustic Resonator Structures

2018

In this work, we investigate numerically the propagation of Lamb waves in a film bulk acoustic resonator (FBAR) structure formed by piezoelectric ZnO layer sandwiched between two Mo electrodes coupled with Bragg reflectors; the system is thus considered as a phononic-crystal (PnC) plate. The aim is to suppress the first-order symmetric Lamb wave mode considered as a spurious mode caused by the establishment of a lateral standing wave due to the reflection at the embedded lateral extremities of the structure; this spurious mode is superposing to the main longitudinal mode resonance of the FBAR. The finite element study, using harmonic and eigen-frequency analyses, is performed on the section…

2018

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…

Emerging blue-UV luminescence in cerium doped YAG nanocrystals

2016

Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041

High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

2018

Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…