Search results for "Names"
showing 10 items of 6843 documents
Structural and in situ vibrational study of luminescent cluster assembled silicon thin films
2006
A Low Energy Cluster Beam Deposition apparatus is employed to produce cluster assembled silicon thin films (1-500 nm thick) by using a laser vaporization source. The generated clusters are studied since their formation through time of flight mass spectra and the calculated size in the gas phase are compared with those of the deposited aggregates obtained through Dynamic Scanning Force Microscopy. The deposited material is also studied "in situ" by Raman and infrared spectroscopy. The spectra reveal that the as deposited clusters are hydrogenated with negligible amount of oxide. A comparison of the film properties before and after their air exposure shows that the exposition induces a consis…
Physical modelling of the melt flow during large-diameter silicon single crystal growth
2003
Abstract The reported investigations concern physical modelling of Czochralski growth of silicon large-diameter single crystals. InGaSn eutectic was used as a modelling liquid, employing actual criteria of the real process (Prandtl, Reynolds, Grashof numbers, etc.) and geometric similarity. A multi-channel measuring system was used to collect and process the temperature and flow velocity data. The investigations were focused on the study of heat transfer, in particular, the instability of the “cold zone” of the melt at the crystallization front.
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
2008
Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.
Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties
2019
The vibrational features of eight interstitial nitrogen related defects in silicon have been investigated at the first principles quantum mechanical level by using a periodic supercell approach, a hybrid functionals, an all electron Gaussian type basis set and the Crystal code. The list includes defects that will be indicated as Ni (one N atom forming a bridge between two Si atoms), Ni-Ns (one interstitial and one substitutional N atom linked to the same Si atom), Ni-Ni (two Ni defects linked to the same couple of silicon atoms) and Ni-Sii-Ni (two Ni defects linked to the same interstitial silicon atom). Four 〈0 0 1〉 split interstitial (dumbbell) defects have also been considered, in which …
High accuracy Raman measurements using the Stokes and anti-Stokes lines
1997
We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…
Energy balance in single exposure multispectral sensors
2013
International audience; Recent simulations of multispectral sensors are based on a simple Gaussian model, which includes filters transmittance and substrate absorption. In this paper we want to make the distinction between these two layers. We discuss the balance of energy by channel in multispectral solid state sensors and propose an updated simple Gaussian model to simulate multispectral sensors. Results are based on simulation of typical sensor configurations.
Porous silicon based photoluminescence immunosensor for rapid and highly-sensitive detection of Ochratoxin A.
2017
A rapid and low cost photoluminescence (PL) immunosensor for the determination of low concentrations of Ochratoxin A (OTA) has been developed. This immunosensor was based on porous silicon (PSi) and modified by antibodies against OTA (anti-OTA). PSi layer was fabricated by metal-assisted chemical etching (MACE) procedure. Main structural parameters (pore size, layer thickness, morphology and nanograins size) and composition of PSi were investigated by means of X-Ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. PL-spectroscopy of PSi was performed at room temperature and showed a wide emission band centered at 680 ± 20nm. Protein A was covalently immobilized …
On-line tools for microscopic and macroscopic monitoring of microwave processing
2007
International audience; Direct monitoring of temperature, chemistry and microstructure is required to understand microwave heating in more detail, in order to fully exploit the unique features this non-equilibrium processing method can offer. In this paper, we show first that microwave radiometry can be used to follow volumetrically the thermal trajectory of microwave-heated aluminium powder. In-situ Raman spectroscopy is then shown to evidence thermal gradients between diamond and silicon grains in a binary powder mixture. Finally, perspectives and preliminary results of microstructural analysis obtained from X-ray microtomography are presented.
Über gemischte gruppe 14-gruppe 14-bindungen
1993
Abstract The six title compounds have been synthesized from Li/KSi/GePh 3 and chloride precursors in THF, DME or diethyl ether at low temperature. The six compounds crystallize isomorphously in the space group Pbca with ordered arrangement for the four symmetrical cases (SiSi 2.394, SiGe 2.412, GeGe 2.440 A) and statistical alignment for the two asymmetrical chains; angle range 116.5–123.3°. Replacement of Si by Ge atoms leads to low field NMR chemical shifts for 13 C ipso atoms and for directly bonded 29 Si atoms. This is in accordance with an enhanced electronegativity of germanium in comparison with silicon. UV/Vis and IR/Raman data are given.
Identifying yeasts using surface enhanced Raman spectroscopy
2019
Made available in DSpace on 2019-10-06T15:40:09Z (GMT). No. of bitstreams: 0 Previous issue date: 2019-07-05 Tekes Academy of Finland Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) The molecular fingerprints of yeasts Saccharomyces cerevisiae, Dekkera bruxellensis, and Wickerhamomyces anomalus (former name Pichia anomala) have been examined using surface-enhanced Raman spectroscopy (SERS) and helium ion microscopy (HIM). The SERS spectra obtained from cell cultures (lysate and non-treated cells) distinguish between these very closely related fungal species. Highly SERS active silver nano-particles suitable for detecting complex biomolecules were fabricated using a simple synt…