Search results for "Nitride"
showing 10 items of 249 documents
Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
2007
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.
Recombination luminescence in aluminum nitride ceramics
2013
Photoluminescence (PL) and afterglow luminescence (AGL) produced by UV laser irradiation with varied intensity were studied in AlN ceramics in the 10–300 K temperature range. Luminescence spectra of AlN ceramics contain the UV–blue band built up of two components – the UV (3.18 eV) and Blue (2.58 eV) bands, which are presumably ascribed to recombination luminescence involving oxygen-related centers in the bulk and on the surface of AlN, correspondingly. It was found that position of the emission band maximum of AlN ceramics depends on such factors as excitation density, temperature, and delay time after excitation ceasing – in the case of AGL. In PL spectra, the excitation density growth pr…
Optical properties of nitride nanostructures
2010
In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or t…
Charoite, as an example of a structure with natural nanotubes
2012
Charoite from the Murun massif in Yakutiya, Russia (Vorob’ev 2008) was investigated using automated electron diffraction tomography (ADT) (Kolb et al. 2007, 2008; Mugnaioli et al. 2010) and precession electron diffraction (PED) (Mugnaioli et al. 2010, 2009), which allowed to determine the structure of charoite for the first time. The structure was solved ab initio in space group P21/m by direct methods using a fully kinematic approach. The least squares refinements with 2878 reflections F(hkl) >4s F converged to unweighted/weighted residuals R 1/wR 2 • 0.173/0.21 (Rozhdestvenskaya et al. 2010).
Beyond the Vegard's law: solid mixing excess volume and thermodynamic potentials prediction, from end-members
2020
Abstract A method has been developed, herein presented, to model binary solid solutions' volume, enthalpy and Gibbs energy using the energy state functions, E ( V , S ) , of the end-members only. The E ( V , S ) s are expanded around an unknown mixing volume, V Mix , and the fundamental equilibrium equation − ( ∂ E / ∂ V ) S = P is used to determine V Mix . V Mix allows us to model enthalpy, straightforwardly. The same argument holds using Helmholtz energy, F ( V , T ) , in place of E ( V , S ) , and the equilibrium equation becomes − ( ∂ F / ∂ V ) T = P . One can readily determine the Gibbs free energy, too. The method presented remarkably simplifies computing of solid mixings' thermodynam…
Use of aluminum nitride for UV radiation dosimetry
2007
Abstract An investigation of AlN ceramics for applications in UV radiation detection shows the advantages of using the 480 nm emission band for optically stimulated luminescence signal detection instead of the previously used 400 nm emission band since the rate of decrease of the response signal at room temperature is lower than that of the 400 nm band, and its excitation region falls in the UV-B range.
Cubic boron nitride: A new prospective material for ultracold neutron application
2009
Abstract At the ultracold neutron (UCN) source of the TRIGA research reactor in Mainz, we have measured for the first time the material optical wall-potential of cubic boron nitride. The measurements were performed with a time-of-flight (TOF) spectrometer. The samples investigated had a wall-potential of ( 305 ± 15 ) neV . This value is in good agreement with the result extracted from neutron reflectometry data and theoretical expectations. Because of its high critical velocity for UCN and its good dielectric characteristics, cubic boron nitride coatings (isotopically enriched) will be useful for a number of applications in UCN experiments.
Triply resonant coherent four-wave mixing in silicon nitride microresonators
2015
The generation of multiple tones using four-wave mixing (FWM) has been exploited for many applications, ranging from wavelength conversion to frequency comb generation. FWM is a coherent process, meaning that its dynamics strongly depends on the relative phase among the waves involved. The coherent nature of FWM has been exploited for phase-sensitive processing in different waveguide structures, but it has never been studied in integrated microresonators. Waveguides arranged in a resonant way allow for an effective increase in the wavelength conversion efficiency (at the expense of a reduction in the operational bandwidth). In this letter, we show that phase shaping of a three-wave pump pro…
Phosphorus mononitride: A difficult case for theory
2019
Phosphorus nitride (PN) is the simplest molecule formed solely by phosphorus and nitrogen. It represents an interesting model for materials, where phosphorus is directly attached to nitrogen. Nevertheless, both theoretical and experimental studies often provide an incomplete picture on the structural, electronic, and spectral properties of PN. Theoretical predictions often suffer from insufficient level of theory, incomplete basis set, or from neglecting several effects, for example, zero‐point vibrational correction (ZPVC). Therefore, we performed an extensive benchmark study on structural, electronic, and spectral properties of PN at the Hartree‐Fock, density functional theory (DFT), or e…
Dynamic $\mathrm{R}_{\mathrm{ON}}$ evaluation of commercial GaN HEMT under different switching and radiation conditions
2019
This paper focus on the study of dynamic resistance $(\mathrm{R}_{\mathrm{dyn}})$ over commercial Gallium Nitride High Electromobility Transistors (GaN HEMTs) devices. The first part shows a study of the main mechanism causing $\mathrm{R}_{\mathrm{dyn}}$ , showing that depending on the structure, stress time, voltage applied and switching conditions, the $\mathrm{R}_{\mathrm{dyn}}$ can suffer a relevant increase. Also, it is demonstrated how the use of soft-switching conditions can alleviate trapping effects. Finally, due to the interest over these devices for future space applications, the effects of gamma radiation over the $\mathrm{R}_{\mathrm{dyn}}$ has been studied.