Search results for "Nitride"
showing 10 items of 249 documents
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
New preparation of ceramic coatings by low-pressure plasma spray
2018
As an advanced thermal spray technology, low-pressure plasma spray (LPPS) allows obtaining high-quality coatings and can bridge the thickness gap between conventional thermal spray technologies and standard thin film processes. Moreover, LPPS permits to build uniform coatings with various microstructures; deposition takes place not only from liquid splats but also from nano-sized clusters as well as from the vapor phase depending on operational conditions. In order to further improve and develop the LPPS process, this research aims to combine it with the emerging suspension plasma spray and reactive plasma spray processes. It was expected to both provide two novel integrated processes and a…
Extrinsic Effects on the Optical Properties of Surface Color Defects Generated in Hexagonal Boron Nitride Nanosheets
2021
Hexagonal boron nitride (hBN) is a wide-band gap van der Waals material able to host light-emitting centers behaving as single photon sources. Here, we report the generation of color defects in hBN nanosheets dispersed on different kinds of substrates by thermal treatment processes. The optical properties of these defects have been studied using microspectroscopy techniques and far-field simulations of their light emission. Using these techniques, we have found that subsequent ozone treatments of the deposited hBN nanosheets improve the optical emission properties of created defects, as revealed by their zero-phonon linewidth narrowing and reduction of background emission. Microlocalized co…
Radiation effects in nitride read-only memories
2010
Abstract We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remai…
Luminescence, vibrational and XANES studies of AlN nanomaterials
2007
Abstract The paper reports comparative studies on synthesized aluminium nitride nanotubes, nanoparticles and commercially available micron-sized AlN powder using different spectroscopic techniques: cathodoluminescence measurements (CL), X-ray absorption near edge spectroscopy (XANES) and Fourier-transform infrared spectroscopy (FTIR). Crucial distinctions in CL spectra are observed for nano- and microsized aluminium nitride powders; systematic shift of the IR absorption maximum has been detected for nanostructured aluminium nitride as compared to commercial samples. Through XANES experiments on Al K-edge structural differences between nano- and bulk AlN are revealed, intensity of features i…
Radiation induced luminescence processes in c-BN
2004
Abstract Spectral properties of cubic boron nitride have been studied using methods of photoluminescence (PL), X-ray excited luminescence (XL), thermoluminescence (TL) and optically stimulated luminescence. It is found that emission of cubic boron nitride is presented by 4 subbands, their relative yield is determined by the excitation type: blue, green (dominant) and red bands are observed in PL, ultraviolet, blue (dominant), green and red bands—in XL. Three thermal peaks are found in TL curves in the 0–700°C temperature range, their presence and intensity depend on radiation type used. A tentative correspondence between thermal peaks and emission bands is found.
Luminescence processes induced by UV radiation in A1N nanotips and nanorods
2008
Abstract The processes of the UV radiation induced photoluminescence, thermoluminescence and optically stimulated luminescence in the AlN nanotips and nanorods are studied in comparison with those in the AlN ceramics. The emission spectra of the UV radiation induced luminescence processes in the AlN nanostructures are similar to those of AlN ceramics, presumably originating from recombination processes with participation of the oxygen-related centres. In the nanostructures the luminescence processes occur mainly through the excitation of the host lattice, probably due to the smaller content of the randomly distributed defects in the lattice. The observed small mutual differences in the lumi…
Microstructural study of titanium carbonitride elaborated by combustion synthesis
2007
Abstract The self-propagating high-temperature synthesis (S.H.S.) process, which is promising for the fabrication of ceramic materials, was chosen to elaborate titanium carbonitride materials. The influence of parameters such as nitrogen gas pressure and carbon ratio on the microstructure was studied. A single phase product of Ti(C,N) is obtained for a carbon ratio under 15 at.% and a nitrogen pressure of 36 MPa. The increase of the carbon ratio corresponds to a decrease of the maximum temperature reached during the synthesis. Time resolved X-ray diffraction measurements (TRXRD) with the synchrotron radiation were used to determine the reaction mechanisms. We could observe that the synthesi…
Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction
2011
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on sapphire substrates, via metal organic chemical vapor deposition (MOCVD). We present ex situ investigations on orientation and structure of grown GaN nanowires on GaN(0001) surface using reflection high energy electron diffraction (RHEED). Both ordered and randomly oriented GaN crystalline structures have been detected.
Enhanced photocatalytic performance of novel electrospun BN/TiO 2 composite nanofibers
2017
International audience; High activity boron nitride/titanium dioxide (BN/TiO2) composite nanofiber photocatalysts were synthesized for the first time via the electrospinning technique. The as-spun nanofibers with a controlled ratio of boron nitride nanosheets (BN) were calcined under air at 500 °C for 4 hours. Their morphological, structural and optical properties were studied by scanning electron microscopy (SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), BET surface area, Fourier-transform infrared (FTIR), Raman spectroscopy, UV-Visible spectrophotometry and room temperature photoluminescence (PL). The effect of loading different BN sheet amounts on the photocat…