Search results for "Optical-Properties"

showing 10 items of 25 documents

ZnO Nanoestructured Layers Processing with Morphology Control by Pulsed Electrodeposition

2011

The fabrication of nanostructured ZnO thin films is a critic process for a lot of applications of this semiconductor material. The final properties of this film depend fundamentally of the morphology of the sintered layer. In this paper a process is presented for the fabrication of ZnO nanostructured layers with morphology control by pulsed electrodeposition over ITO. Process optimization is achieved by pulsed electrodeposition and results are assessed after a careful characterization of both morphology and electrical properties. SEM is used for nucleation analysis on pulsed deposited samples. Optical properties like transmission spectra and Indirect Optical Band Gap are used to evaluate th…

INGENIERIA DE LA CONSTRUCCIONFabricationMaterials scienceBand gapThin-FilmsZinc-OxideNucleationNanotechnologySolar-CellsCrystalline SiliconCIENCIA DE LOS MATERIALES E INGENIERIA METALURGICAMaterials ChemistryElectrochemistryProcess optimizationCrystalline siliconThin filmDepositionDeposition (law)Ciencias ExactasRenewable Energy Sustainability and the Environmentpulsed electrodepositionOptical-PropertiesFísicaCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsOxygennanostructured ZnO thin filmsFISICA APLICADALayer (electronics)
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Electrochemical Deposition Mechanism for ZnO Nanorods: Diffusion Coefficient and Growth Models

2011

Fabrication of nanostructured ZnO thin films is a critical process for many applications based on semiconductor devices. So on understanding of the electrochemical deposition mechanism is also fundamental for knowing the optimal conditions on growth of ZnO nanorods by electrodeposition. In this paper the electrochemical mechanism for ZnO nanorods formation is studied. Results are based on the evolution of the diffusion coefficient using the Cotrell equation, and different growth models proposed by Scharifcker and Hills for nucleation and growth.

INGENIERIA DE LA CONSTRUCCIONMaterials scienceThin-FilmsDiffusionZinc-OxideInorganic chemistrychemistry.chemical_elementZincElectrochemistryCIENCIA DE LOS MATERIALES E INGENIERIA METALURGICAMaterials ChemistryElectrochemistryDeposition (phase transition)Thin filmRenewable Energy Sustainability and the Environmentbusiness.industryOptical-PropertiesCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsSemiconductorchemistrySemiconductorsFISICA APLICADACathodic ElectrodepositionNanorodbusiness
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Poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films for advanced performance transistors

2005

Solution processed Langmuir-Scha ̈fer and cast thin films of regioregular poly(2,5-dioctyloxy-1,4- phenylene-alt-2,5-thienylene) are investigated as transistor active layers. The study of their field-effect properties evidences that no transistor behavior can be seen with a cast film channel material. This was not surprising considering the twisted conformation of the polymer backbone predicted by various theoretical studies. Strikingly, the Langmuir-Scha ̈fer (LS) thin films exhibit a field-effect mobility of 5 × 10-4 cm2/V‚s, the highest attained so far with an alkoxy-substituted conjugated polymer. Extensive optical, morphological, and structural thin-film characterization supports the a…

LangmuirMaterials sciencePHENYLENEGeneral Chemical EngineeringNanotechnologylaw.inventionlawPhenyleneSTILLE COUPLING REACTIONMaterials ChemistryThin filmConductive polymerbusiness.industryREGIOREGULAR POLY(3-HEXYLTHIOPHENE)TransistorGeneral ChemistryOPTICAL-PROPERTIESSolution processedBLODGETT-FILMSCONDUCTING POLYMERSOptoelectronicsField-effect transistorPOLYTHIOPHENESFIELD-EFFECT TRANSISTORSREPEAT UNITSbusinessCONJUGATED POLYMERS
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Light absorption and electrical transport in Si:O alloys for photovoltaics

2010

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was …

Materials scienceAbsorption spectroscopyFour-pointAnalytical chemistryGeneral Physics and AstronomyAbsorption coefficientChemical vapor depositionBoron implantationSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiasymbols.namesakeElectrical resistivity and conductivityPlasma-enhanced chemical vapor depositionThin filmAbsorption (electromagnetic radiation)Electrical sheet resistanceSi contentSEMIINSULATING POLYCRYSTALLINE SILICON; SOLAR-CELLS; 3RD-GENERATION PHOTOVOLTAICS; OPTICAL-PROPERTIES; AMORPHOUS-SILICON; THIN-FILMS; CRYSTALLINEOptical absorptionProbe methodElectrical resistivityAlloy depositionSputter depositionElectrical transportsymbolsOxygen-rich siliconRaman spectroscopyOptical gapReflectance spectrumPhotovoltaic
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Growth of glass-embedded Cu nanoparticles: A low-frequency Raman scattering study

2012

International audience; Several populations of Cu spherical nanoparticles grown in a silicate glass at different temperatures with respect to the glass transition temperature were studied using high-resolution, low-frequency Raman scattering and optical absorption. The analysis of the spectra shows that the annealing of the doped glass at temperatures close to T-g leads to the formation of metallic copper nanoparticles with high crystallinity, whereas lower-temperature and higher-temperature annealings result in the formation of poorer nanoparticle assemblies in terms of size distribution and/or nanocrystallinity. It is also shown that in the case where the optical data do not unambiguously…

Materials scienceAnalytical chemistrychemistry.chemical_elementNanoparticle02 engineering and technologyMETAL NANOPARTICLES01 natural sciencesAnnealing (glass)symbols.namesakeCrystallinityCondensed Matter::Materials ScienceCUPROUS-OXIDE0103 physical sciencesSILICA010306 general physicsDopingCOPPER NANOPARTICLESOPTICAL-PROPERTIES[ PHYS.COND.CM-GEN ] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]021001 nanoscience & nanotechnologyCondensed Matter PhysicsCopperElectronic Optical and Magnetic MaterialsNANOCRYSTALSchemistry[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]symbols0210 nano-technologyGlass transitionRaman spectroscopyMATRIXRaman scattering
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Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

2020

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash

Materials scienceComputer Networks and CommunicationsBand gapgrowthlcsh:TK7800-836002 engineering and technologyfabricationElectroluminescence01 natural sciencesSettore ING-INF/01 - Elettronicaganlaw.inventionelectroluminescencelawleds0103 physical sciencesmorphologyzno/gan heterojunction ledsSpontaneous emissionElectrical and Electronic Engineeringepitaxial p-gan layers010302 applied physicsZnO nanorodbusiness.industryzno nanorodszno/gan heterostructurelcsh:Electronicsepitaxial p-GaN layerHeterojunctiondependence021001 nanoscience & nanotechnologyoptical-propertieschemical bath depositionSemiconductorHardware and ArchitectureControl and Systems EngineeringZnO/GaN heterojunction LEDSignal ProcessingznoOptoelectronicsNanorod0210 nano-technologybusinessnanorodsChemical bath depositionLight-emitting diode
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Hackmanite—The Natural Glow-in-the-Dark Material

2020

“Glow-in-the-dark” materials are known to practically everyone who has ever traveled by airplane or cruise ship, since they are commonly used for self-lit emergency exit signs. The green afterglow, persistent luminescence (PeL), is obtained from divalent europium doped to a synthetic strontium aluminate, but there are also some natural minerals capable of afterglow. One such mineral is hackmanite, the afterglow of which has never been thoroughly investigated, even if its synthetic versions can compete with some of the best commercially available synthetic PeL materials. Here we combine experimental and computational data to show that the white PeL of natural hackmanite is generated and cont…

Materials scienceGeneral Chemical Engineeringchemistry.chemical_element02 engineering and technologyNatural mineral010402 general chemistry01 natural sciencesNatural (archaeology)Synthetic materialsSODALITEchemistry.chemical_compoundPersistent luminescenceMaterials ChemistryTUGTUPITESPECTRACOLORluminesenssiIRONStrontium aluminate[CHIM.MATE]Chemical Sciences/Material chemistryOPTICAL-PROPERTIESGeneral ChemistryRESONANCE021001 nanoscience & nanotechnology0104 chemical sciencesAfterglow[CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistryCENTERSPhysics and AstronomychemistryChemical physicsLUMINESCENCE0210 nano-technologyEuropiumLuminescenceChemistry of Materials
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Silicon-based light-emitting devices: Properties and applications of crystalline, amorphous and er-doped nanoclusters

2006

In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light-emitting devices based on silicon nanostructures. The performances of crystalline, amorphous, and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanoclusters are more conductive than the crystalline counterpart. In contrast, nonradiative processes seem to be more efficient for amorphous clusters resulting in a lower quantum efficiency. Erbium doping results in the presence of an intense EL at 1.54 μm with a concomit…

Materials scienceSiliconElectroluminescent devicechemistry.chemical_elementNanocrystalQUANTUM DOTSElectroluminescenceSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaNanoclustersErbiumIntegrated optoelectronicElectroluminescence (EL)Light-emitting deviceOptical interconnectionElectrical and Electronic Engineeringbusiness.industryDopingOPTICAL-PROPERTIESAtomic and Molecular Physics and OpticsAmorphous solid1.54 MU-MchemistryNanocrystalOptoelectronicsQuantum efficiencySI NANOCRYSTALSENERGY-TRANSFERbusinessErbium
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Influence of sol counter-ions on the visible light induced photocatalytic behaviour of TiO2 nanoparticles

2014

Titanium dioxide (TiO2) nanoparticles are attracting increasing interest because of their superior photocatalytic and antibacterial properties. Here, aqueous titanium oxy-hydroxide sols were made, using a green synthesis method, from the controlled hydrolysis/peptisation of titanium isopropoxide. Three different mineral acids were used to peptise the sol (HNO3, HBr and HCl), and provide counter-ions. The influence of nitrate or halide sol counter-ions on size distributions of the starting sols were measured via photon correlation spectroscopy (PCS). Semi-quantitative phase composition analysis (QPA), on the gels thermally treated at 450 and 600 degrees C, was carried out via Rietveld refine…

Materials scienceTiO2 photocatalysis self-cleaning additive building materialInorganic chemistryGARNET YAG FIBERSSettore ICAR/10 - Architettura TecnicaHalidechemistry.chemical_elementCatalysisFERRITE FIBERSchemistry.chemical_compoundHETEROGENEOUS PHOTOCATALYSISORGANIC CONTAMINANTSTitanium isopropoxideGREEN CHEMISTRYSettore CHIM/03 - Chimica Generale e InorganicaTITANIUM-DIOXIDEBrookiteRietveld refinementSettore CHIM/07 - Fondamenti Chimici delle TecnologieOPTICAL-PROPERTIESDEGRADATIONANATASE-RUTILE TRANSFORMATIONSettore ING-IND/22 - Scienza E Tecnologia Dei MaterialichemistryRutilevisual_artTitanium dioxidevisual_art.visual_art_mediumPhotocatalysisGEL PRECURSORTitanium
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Dust Production and Particle Acceleration in Supernova 1987A Revealed with ALMA

2013

Supernova (SN) explosions are crucial engines driving the evolution of galaxies by shock heating gas, increasing the metallicity, creating dust, and accelerating energetic particles. In 2012 we used the Atacama Large Millimeter/Submillimeter Array to observe SN 1987A, one of the best-observed supernovae since the invention of the telescope. We present spatially resolved images at 450um, 870um, 1.4mm, and 2.8mm, an important transition wavelength range. Longer wavelength emission is dominated by synchrotron radiation from shock-accelerated particles, shorter wavelengths by emission from the largest mass of dust measured in a supernova remnant (>0.2Msun). For the first time we show unambig…

MetallicityAstrophysics::High Energy Astrophysical PhenomenaFOS: Physical sciencesSynchrotron radiationAstrophysicsAstrophysics::Cosmology and Extragalactic AstrophysicsSubmillimeter ArrayEARLY UNIVERSEindividual (1987A) [supernovae]Magellanic CloudsAstrophysics::Solar and Stellar AstrophysicsEjectaSupernova remnantSolar and Stellar Astrophysics (astro-ph.SR)Astrophysics::Galaxy AstrophysicsQBHigh Energy Astrophysical Phenomena (astro-ph.HE)PhysicsISM [galaxies]supernova remnants [ISM]Astronomy and AstrophysicsOPTICAL-PROPERTIESHUBBLE-SPACE-TELESCOPEAstrophysics - Astrophysics of GalaxiesEVOLUTIONGalaxyParticle accelerationEJECTASupernovaPhysics and AstronomyAstrophysics - Solar and Stellar AstrophysicsSpace and Planetary ScienceAstrophysics of Galaxies (astro-ph.GA)REVERSE SHOCKREMNANTAstrophysics::Earth and Planetary AstrophysicsEMISSIONAstrophysics - High Energy Astrophysical PhenomenaMASSIVE STARSSN 1987A
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