Search results for "Optoelectronics"
showing 10 items of 2306 documents
High-Energy Photon Detection With LYSO Crystals
2008
For the first time, the response function to high-energy photons of a 3 times 3 matrix comprising large volume LYSO crystals was measured using energy marked photons provided by the tagged photon facility of MAMI. The crystal quality was determined based on the optical transparency, the intrinsic radioactivity and the luminescence yield. Energy and time resolutions for photons up to 490 MeV photon energy have been deduced from the reconstruction of the electromagnetic shower deposited into the crystal array and the data delivers very promising results.
Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm
2018
Abstract High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on a 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. MuPix7 is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to 5.0 × 1015 neq/cm2) and 24 GeV protons (up to 7.8 × 1015 protons/cm2) and compare the performa…
High Voltage Monolithic Active Pixel Sensors
2018
Ever higher demands on resolution and rate capability drive the development of particle tracking detectors. Especially at low momenta, multiple Coulomb scattering in the material of the detector is also strongly affecting the resolution of momentum measurements. While gas-based detectors such as drift chambers and time projection chambers can be built with very small amounts of material, their rate capability is limited by ageing and space charge effects. Hybrid semiconductor detectors on the other hand combine a depleted (silicon) sensor with a custom amplifier and readout chip. Pixelated devices especially can operate efficiently in very harsh rate and radiation environments such as the i…
A low-noise and fast pre-amplifier and readout system for SiPMs
2015
Abstract To operate silicon photomultipliers (SiPMs) in a demanding environment with large temperature gradients, different amplifier concepts were characterized by analyzing SiPM pulse-shapes and charge distributions. A fully differential 4-wire SiPM pre-amplifier with separated tracks for the bias voltage and with good common-mode noise suppression was developed and successfully tested. To achieve highest single-pixel resolutions an online after-pulse and pile-up suppression was realized with fast readout electronics based on digital filters.
Optical properties and spectrometric performance of TlBr detector crystals
2006
Abstract It is shown that preliminary TlBr crystals optical parameters testing can be used for detector crystal selection. Absorption in fundamental spectral region was used for the band gap width definition and determination of homological impurities presence. The luminescence was applied for impurity and defects content study. Radionuclide spectra 241Am were measured using the ionizing radiation detectors with planar electrodes made from TlBr crystals. The detector energy resolution for TlBr detectors produced from different row materials was summarized and the results of detector testing parameters and results of optical investigation were compared.
Optical investigations of TlBr detector crystals
2004
Shift of fundamental absorption edge, the position of main luminescence bands, the luminescence decay and transient absorption spectra in three TlBr crystals were studied. The γ-quanta detector made from TlBr crystals with similar transient absorption and luminescence parameters shows similar detector properties. The iodine impurity in TlBr was detected by optical methods. The role of impurities and crystal defects in γ-quanta detectors manufactured is discussed.
Laser tests of silicon detectors
2007
This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented.
Inverted-conical light guide for crosstalk reduction in tightly-packed scintillator matrix and MAPMT assembly
2015
Abstract In this paper we present the Inverted-Conical light guide designed for optical crosstalk reduction in the scintillator-MAPMT assemblies. The research was motivated by the 30% crosstalk observed in UFFO X-ray telescope , UBAT, during the preliminary calibration with MAPMTs of 64 2.88 × 2.88 mm2 pixels and identically gridded YSO crystal matrices. We began the study with the energy and crosstalk calibrations of the detector, then we constructed a GEANT4 simulation with the customized metallic film model as the MAPMT photocathode . The simulation reproduced more than 70% of the crosstalk and explained it as a consequence of the total reflection produced by the photocathode. The result…
Cryogenic operation of silicon detectors
2000
This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a #uence of 3.5]1014 p/cm2 and of a p}n junction diode detector irradiated to a similar #uence. At temperatures below 130 K a recovery of charge collection e$ciency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
2004
Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.