Search results for "Optoelectronics"

Tapered Two-Wire Waveguide for Time-Domain Integration of Broadband Terahertz Pulses

2021

We show the time-domain integration of terahertz pulses achieved in a sub-wavelength, tapered two-wire waveguide. Both simulation and experimental results prove the time integration functionality of this waveguide topology.

Spatio-temporal control of ultra-short pulses by using diffractive optical elements

2012

Diffractive optical elements (DOEs) have shown their applicability to control the spatio-temporal characteristics of ultra-short laser pulses. DOEs can provide high efficiency, compactness, very low material dispersion and, when implemented with spatial light modulators, real-time pulse engineering. In this communication, we report management of temporal and spectral profiles of ultra-short pulses by means of a quasi-direct space-to-time (QDST) pulse shaper. Moreover, we present spatio-temporal control, including dispersion compensation, by DOEs, and applications for activating nonlinear processes. On the other hand, we have achieved complete spatial control of ultra-short pulses, overcomin…

Polarization-sensitive population trapping in an optically pumped laser

1994

Piezoelectric Actuated Nonlinear Energy Sink With Tunable Attenuation Efficiency

2019

Abstract Comparing to linear vibration absorbers, nonlinear energy sinks (NESs) have attracted worldwide attention for their intrinsic characteristics of targeted energy transfer or energy pumping in a relatively wide frequency range. Unfortunately, they are highly dependent on the vibration amplitude to be attenuated and will play its role only if the external load exceeds a specific threshold value. Different from the passive bistable NES, a novel piezoelectric nonlinear energy sink (PNES) is designed by introducing in-phase actuation to compensate or enhance the external vibration loads, thus triggering the NES operating in high attenuation efficiency. The nonlinear mathematic model of t…

Intensity noise-driven nonlinear fiber polarization scrambler

2014

We propose and analyze a novel all-optical fiber polarization scrambler based on the transfer (via the Kerr effect) of the intensity fluctuations of an incoherent pump beam into polarization fluctuations of a frequency-shifted signal beam, copropagating in a randomly birefringent telecom fiber. Optimal signal polarization scrambling results whenever the input signal and pump beams have nearly orthogonal states of polarization. The nonlinear polarization scrambler may operate on either cw or high-bit-rate pulsed signals.

Electrical Characterization of CdTe pixel detectors with Al Schottky anode

2014

Abstract Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage ( I–V ) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe con…

Investigation on pixellated CZT detectors coupled with a low power readout ASIC

2008

In this work, we investigated on the spectroscopic performances of two pixellated CZT detectors coupled with a custom low noise and low power readout ASIC. The detectors (10 x 10 x 1 mm3 and 10 x 10 x 2 mm3 single crystals) consist of an array of 256 pixels with a geometric pitch of 0.5 mm. The ASIC, fabricated in 0.8 μm BiCMOS technology, is equipped with eight independent channels (preamplifier and shaper) characterized by a dynamic range from 10 keV to 100 keV, low power consumption (0.5 mW/channel) and low noise (150–500 electrons r.m.s.). The spectroscopic results point out the good energy resolution of both detectors at room temperature (5.8 % FWHM at 59.5 keV for the 1 mm thick detec…

Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

2012

16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.

SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

2011

The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.

Highly transparent and birefringent chromophores for organic photorefractive materials

1999

Abstract A series of chromophores for application in organic photorefractive (PR) materials is investigated by electro-optical absorption measurements (EOAM). This experimental technique yields information on the transition dipole moment μ ag , the ground-state dipole moment μ g , and the change of the dipole moment upon optical excitation Δ μ within the intense charge transfer (CT) band of the dyes. It is shown that the results of the EOAM experiment allow us to estimate the PR figures-of-merits (FOMs) of the chromophores by either perturbational two-level equations or Kramers–Kronig transformation. In particular, chromophores based on the heterocyclic dihydropyran and dihydropyridine grou…