Search results for "Optoelectronics"
showing 10 items of 2306 documents
Sub-wavelength imaging of light confinement and propagation in SOI based photonic crystal devices
2006
A light source is coupled into photonic crystal devices and a near field optical probe is used to observe the electromagnetic field propagation and distribution at a sub-wavelength scale. Bloch modes are clearly observed.
Study of the angular acceptance of surface plasmon Bragg mirrors
2007
Surface plasmon based photonic devices are promising candidates for highly integrated optics. A surface plasmon (SP) is basically an electromagnetic wave confined in the interface between a metal and a dielectric, and is due to the interaction of the electromagnetic field with the surface bounded electron charges in the metal. A SP can propagate along the interface where it is confined (the propagation length being tens of micrometers in the visible range), but its associated electromagnetic field decreases exponentially in the perpendicular direction, in such a way that this vertical confinement makes SP very attractive for the design of optical devices in coplanar geometry. An important e…
Silencing and enhancement of second-harmonic generation in optical gap antennas
2012
International audience; Amplifying local electromagnetic fields by engineering optical interactions between individual constituents of an optical antenna is considered fundamental for efficient nonlinear wavelength conversion in nanometer-scale devices. In contrast to this general statement we show that high field enhancement does not necessarily lead to an optimized nonlinear activity. In particular, we demonstrate that second-harmonic responses generated at strongly interacting optical gap antennas can be significantly suppressed. Numerical simulations are confirming silencing of second-harmonic in these coupled systems despite the existence of local field amplification. We then propose a…
Optical Plasmonic Yagi-Uda Nano-Antennas Array for Energy Harvesting Applications
2020
Optical nanoantennas have been of great interest recently due to their ability to support a highly efficient, localized surface plasmon resonance and produce significantly enhanced and highly confined electromagnetic fields. The Yagi-Uda nanoantenna, an optical analogue of the well-established radiofrequency Yagi-Uda antenna, stands out by its efficient unidirectional light emission and enhancement. In this paper, the design of an optical plasmonic Yagi-Uda nanoantenna for energy harvesting application is proposed. The enhancement of the directivity is reached by means of an organization in array. The simulation results, carried out by 3D code CST Studio, show that the proposed nanoantenna …
Gigahertz Single-Electron Pumping Mediated by Parasitic States
2018
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achi…
Location of holes in silicon-rich oxide as memory states
2002
The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO 2 layers [used as gate dielectric in a metal-oxide-semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The principle of operation is based on holes permanently trapped in the SRO layer and reversibly moved up and down, close to the metal and the semiconductor, in order to obtain the two logic states of the memory. The concept has been verified by suitable experiments on MOS structures. The device exhibits an excellent endurance behavior and, due to the low mobility of the holes at low field in the SRO layer, a much longer refresh …
Impedance of space-charge-limited currents in organic light-emitting diodes with double injection and strong recombination
2006
The impedance model for a one-carrier space-charge-limited (SCL) current has been applied to explain some experimental features of double carrier organic light-emitting diodes. We report the analytical model of impedance of bipolar drift transport in SCL regime in the limit of infinite recombination. In this limit the ac impedance function is identical to that of a single carrier device, with a transit time modified by the sum of mobilities for electrons and holes, μn+μp. The static capacitance C(ω→0) is a factor of ¾ lower than the geometric capacitance, as observed for single carrier devices, but it is shifted to higher frequencies. It follows that impedance measurements in the dual-carri…
Temperature Dependent Quantum Efficiencies in Multicrystalline Silicon Solar Cells
2015
Abstract Several field studies comparing modules based on Elkem Solar Silicon ® (ESS ® ) cells with reference modules based on non-compensated virgin polysilicon show that the compensated ESS ® modules outperform the reference modules with comparable installed capacity under certain operating conditions. At high temperatures and high irradiation conditions the modules based on compensated silicon produce more energy than the reference modules. In order to increase the understanding of the observed effect cells are studied at different temperatures by the means of IV-characteristics as well as quantum efficiencies. Quantum efficiency measurements show that the main difference between ESS ® c…
Si Donor Incorporation in GaN Nanowires
2015
With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…
Acoustic manipulation of electron-hole pairs in GaAs at room temperature
2004
We demonstrate the optically detected long-range (>100 μm) ambipolar transport of photogenerated electrons and holes at room temperature by surface acoustic waves (SAWs) in (In,Ga)As-based quantum well structures coupled to an optical microcavity. We also show the control of the propagation direction of the carriers by a switch composed of orthogonal SAW beams, which can be used as a basic control gate for information processing based on ambipolar transport.