Search results for "Optoelectronics"
showing 10 items of 2306 documents
Structure-determined thermoelectric properties of Bi2Se3 thin films deposited by vapour-solid technique
2018
International audience; In this work, a simple catalyst-free vapour-solid deposition method is applied for controlled obtaining of two types (planar and disordered) continuous Bi2Se3 nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Performed for the deposited thin films transport and thermoelectric characterization (type, concentration and mobility of the main charge carriers, Seebeck coefficient and power factor) showed that proposed deposition method allows to fabricate “low-doped” Bi2Se3 thin films with power factor comparable and even higher than reported for the Bi2Se3 thin films fabricated by molecular beam epitaxy technique.
Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates
2013
The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.
Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions
2006
We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x-ray diffraction. Atomic force microscopy shows different surface morphologies between samples grown with and without In. This is ascribed to a modified relaxation mechanism induced by different surface kinetics. These improved MQWs exhibit intersubband absorption at short wavelength (2 mu m). The absorption linewidth is as low as 65 meV and the absorption coefficient is increased by 85%.
Design of dispersion-managed fiber systems for transmitting chirp-free Gaussian pulses
2008
International audience; We present a general method to analytically design a dispersion-managed (DM) fiber system for any desired fiber (dispersion, nonlinearity and losses) and pulse (width and energy) parameters. This analytical design allows one to transmit chirp-free Gaussian pulses (for very long distances) in almost all kinds of DM fiber systems that have appeared so far in the literature, including systems with dispersion map length greater, equal or shorter with respect to the amplification period.
Preface to Special Issue of Energy Technology on Perovskite Optoelectronics
2017
This Editorial introduces one of two companion Special Issues on “Halide Perovskites for Optoelectronics Applications” in Energy Technology and ChemSusChem following the ICMAT 2017 Conference in Singapore. More information on the other Special Issue can be found in the Editorial published in ChemSusChem.
Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction
2021
EXCITONS, LOCALIZED STATES IN SILICON DIOXIDE AND RELATED CRYSTALS AND GLASSES
2000
The excitons, localized states in crystalline and glassy silicon dioxide, germanium dioxide were studied by photoluminescent and photoelectric experimental methods. Results were compared with analogous investigations of related crystals, such as aluminum and gallium orthophosphates, and of related glasses, such as silica, sodium silicates, germanates, lead and phosphates glasses. Special attention was made to the influence of oxygen deficiency on localized states of glasses, in general, and to the nature of the 7.6 eV band in reduced silica, in particular.
Fabrication of Bismuth Absorber Arrays for NTD-Ge Hard X-ray Microcalorimeters
2020
The high-spectral-resolution detection of hard X-rays (E > 20 keV) is a challenging and nearly unexplored area in space astrophysics. Traditionally hard X-ray detectors present moderate spectral resolutions, although few tens of eV one could open new frontiers in the study of nuclear processes and high-temperature plasma dynamics in energetic processes. This can be achieved by using cryogenic microcalorimeters. Within a research activity aimed at developing arrays of neutron transmutation-doped germanium (NTD-Ge) microcalorimeters for the high-spectral-resolution detection (about 50 eV@60 keV) of hard X-rays (20 keV < E<100 keV), we developed an electroplating process to fabricate …
Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories
2009
Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.