Search results for "Optoelectronics"
showing 10 items of 2306 documents
Efficient Wide-Bandgap Mixed-Cation and Mixed-Halide Perovskite Solar Cells by Vacuum Deposition
2021
Vacuum deposition methods are increasingly applied to the preparation of perovskite films and devices, in view of the possibility to prepare multilayer structures at low temperature. Vacuum-deposited, wide-bandgap solar cells based on mixed-cation and mixed-anion perovskites have been scarcely reported, due to the challenges associated with the multiple-source processing of perovskite thin films. In this work, we describe a four-source vacuum deposition process to prepare wide-bandgap perovskites of the type FA1-n Cs n Pb(I1-x Br x )3 with a tunable bandgap and controlled morphology, using FAI, CsI, PbI2, and PbBr2 as the precursors. The simultaneous sublimation of PbI2 and PbBr2 allows the…
Vacuum-Deposited Multication Tin-Lead Perovskite Solar Cells
2020
The use of a combination of tin and lead is the most promising approach to fabricate narrow bandgap metal halide perovskites. This work presents the development of reproducible tin and lead perovskites by vacuum co-deposition of the precursors, a solvent-free technique which can be easily implemented to form complex stacks. Crystallographic and optical characterization reveal the optimal film composition based on cesium and methylammonium monovalent cations. Device optimization makes use of the intrinsically additive nature of vacuum deposition, resulting in solar cells with 8.89% photovoltaic efficiency. The study of the devices by impedance spectroscopy identifies bulk recombination as on…
Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy
2001
Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by other techniques. The optical properties of the films have been studied by electroabsorption measurements. The band gap and its temperature dependence are very close to those of indium selenide single crystals. The width of the fundamental transition, even if larger than that of the pure single crystal material, decreases monotonously with temperature. Exciton peaks are not observed even at low temper…
Efficient Perovskite Light-Emitting Diodes: Effect of Composition, Morphology, and Transport Layers
2018
Organic-inorganic metal halide perovskites are emerging as novel materials for light-emitting applications due to their high color purity, band gap tunability, straightforward synthesis, and inexpensive precursors. In this work, we improve the performance of three-dimensional perovskite light-emitting diodes (PeLEDs) by tuning the emissive layer composition and thickness and by using small-molecule transport layers. Additionally, we correlate PeLED efficiencies to the perovskite structure and morphology. The results show that the PeLEDs containing perovskites with an excess of methylammonium bromide (MABr) to lead bromide (PbBr2) in a 2:1 ratio and a layer thickness of 80 nm have the highes…
Enhancement of the sub-band-gap photoconductivity in ZnO nanowires through surface functionalization with carbon nanodots
2018
We report on the surface functionalization of ZnO nanowire (NW) arrays by attachment of carbon nanodots (C-dots) stabilized by polyethylenimine. The photoconductive properties of the ZnO NWs/C-dots devices were investigated under photoexcitation with photon energies below and above the ZnO band gap. The results indicate an increased photoresponse of the functionalized devices in the visible spectral range, as well as enhanced UV photoconductivity. This is attributed to the fast injection of photoexcited electrons from the C-dots into the conduction band of the ZnO NWs, and the subsequent slower desorption of molecular species from the NW surface, which reduces the surface depletion region i…
Hybrid organic-inorganic light emitting diodes: effect of the metal oxide
2010
Hybrid organic-inorganic light emitting diodes (HyLEDs), employing metal oxides as the electron injecting contacts, are interesting as an alternative to OLEDs. Until recently, the metal oxide of choice was either titanium dioxide or zinc oxide. In this work two wide bandgap metal oxides, HfO2 and MgO, are employed as electron injecting layer in HyLEDs. It is demonstrated that both the current density and the luminance values obtained are directly related to the barriers for electron injection (from the ITO to the metal oxide) and for hole transfer to the same metal oxide, outlining a new design rule for the optimization of HyLEDs. Record device efficacies (3.3 cd/A, >10000 cd/m2) using the …
Photocurrent spectroscopy in passivity studies
2018
The aim of this article is to present photocurrent spectroscopy as useful in situ technique for the physicochemical characterization of passive films and corrosion layers. The response of (both amorphous and crystalline) semiconductor/electrolyte junction under irradiation is treated and discussed in order to get information about solid-state properties such as band gap and flat band potential. The possibility to use Photocurrent Spectroscopy (PCS), in a quantitative way, to get information on the composition of corrosion layers is discussed through a semiempirical correlation between the band gap of the oxides (or hydroxides) and the difference of electronegativity of their constituents. F…
Novel 2D boron nitride with optimal direct band gap: A theoretical prediction
2022
Abstract A novel structurally stable 2D-boron nitride material, namely di-BN, is predicted by means of the first-principles simulations. This monolayer BN system is composed of the azo (N-N) and diboron (B-B) groups. Its in-plane stiffness is close to the monolayer h-BN. Usually, the boron nitride materials are semiconductors with large band gaps. However, the monolayer di-BN possesses a moderate direct band gap of 1.622 eV obtained from our HSE06 calculation. Although the GW correction enlarges the band gap to 2.446 eV, this value is still in the range of the visible light. The detailed investigation of its band arrangement reveals that this material is able to product hydrogen molecules i…
Grain size dependent bandgap shift of SnO2 nanofibers
2013
SnO2 nanofibers with various grain sizes ranging from 18.5 to 31.6 nm in diameter were fabricated by electrospinning a polymeric solution and subsequent controlled calcination of the as-spun fibers. The calcined fibers were polycrystalline and composed of densely packed nano-sized SnO2 grains. The effect of the nanograin size on the optical bandgap of SnO2 nanofibers was examined by ultraviolet-visible spectroscopy. The bandgap showed a strong dependence on the nanograin size. The bandgap decreased with increasing nanograin size. Some calculations were performed to understand the relationship between the experimentally obtained bandgaps of the SnO2 nanofibers and the theoretical ones. Quant…
Enhanced thermoelectric properties of lightly Nb doped SrTiO3 thin films
2021
Novel thermoelectric materials developed for operation at room temperature must have similar or better performance along with being as ecofriendly as those commercially used, e.g., BiTe, in terms of their toxicity and cost. In this work, we present an in-depth study of the thermoelectric properties of epitaxial Nb-doped strontium titanate (SrTiNbO) thin films as a function of (i) doping concentration, (ii) film thickness and (iii) substrate type. The excellent crystal quality was confirmed by high resolution transmission electron microscopy and X-ray diffraction analysis. The thermoelectric properties were measured by the three-omega method (thermal conductivity) and van der Pauw method (el…