Search results for "Oscillator strength"
showing 10 items of 26 documents
Strong optical nonlinearities in gallium and indium selenides related to inter-valence-band transitions induced by light pulses
1997
A nonlinear optical effect is shown to occur in gallium and indium selenides at photon energies of the order of 1.5 eV. It corresponds to transitions from a lower-energy valence band to the uppermost one when a nonequilibrium degenerate hole gas is created in the latter by a laser pulse. This inter-valence-band transition is allowed by crystal symmetry. Its oscillator strength is estimated through the $f$-sum rule and turns out to be about two orders of magnitude higher than that of the fundamental transition. The intensity of this effect is stronger when the pump pulse photon energy is close to that of the inter-valence-band transition; a condition that can be fulfilled only in indium sele…
Electronic excited states of conjugated cyclic ketones and thioketones : A theoretical study
2002
Absorption spectra of a series of cyclic conjugated ketones and thioketones have been computed at the multiconfigurational second-order multistate perturbation level of theory, the CASSCF/MS-CASPT2 method. Excitation energies, transition dipole moments, oscillator strengths, and static dipole moments are reported and discussed for excited states with energies lower than ≈ 7–8 eV. The main bands of the spectra have been assigned and characterized in most cases for the first time. The spectroscopy of the different systems is compared in detail. Thioketones in particular have low-energy and intense ππ∗ transitions which suggest corresponding enhanced nonlinear molecular optical properties. Add…
Room-temperature efficient light detection by amorphous Ge quantum wells
2013
In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%. © 2013 Cosentino et al.
On the hexagonal ice-like model of structured water: Theoretical analysis of the low-lying excited states
2014
Abstract The basic molecular unit ( BMU ) of the hexameric ice-like model has been identified as the negatively charged radical species [H 19 O 10 ] − . On the basis of high-level ab initio computations, by means of using the CASPT2 methodology, the low-lying excited states of BMU and its π-stacked dimer are analysed. It is concluded that the BMU constitutes certainly a versatile unit having two spectroscopic features in the near infrared region, two in the visible range and two in the near ultraviolet zone. The main absorption feature is found however for the π-stacked dimer formed by two BMUs , the H 38 O 20 system, which has a pronounced stabilization in the ground state with respect to …
Lower Rydberg series of methane: a combined coupled cluster linear response and molecular quantum defect orbital calculation.
2006
Vertical excitation energies as well as related absolute photoabsorption oscillator strength data are very scarce in the literature for methane. In this study, we have characterized the three existing series of low-lying Rydberg states of CH4 by computing coupled cluster linear response (CCLR) vertical excitation energies together with oscillator strengths in the molecular-adapted quantum defect orbital formalism from a distorted Cs geometry selected on the basis of outer valence green function calculations. The present work provides a wide range of data of excitation energies and absolute oscillator strengths which correspond to the Rydberg series converging to the three lower ionization p…
Interlayer exciton dynamics in van der Waals heterostructures
2019
Atomically thin transition metal dichalcogenides can be stacked to van der Waals heterostructures enabling the design of new materials with tailored properties. The strong Coulomb interaction gives rise to interlayer excitons, where electrons and holes are spatially separated in different layers. In this work, we reveal the time- and momentum-dependent elementary processes behind the formation, thermalization and photoemission of interlayer excitons for the exemplary MoSe2–WSe2 heterostructure. We identify tunneling of holes from MoSe2 to WSe2 on a ps timescale as the crucial process for interlayer exciton formation. We also predict a drastic reduction of the formation time as a function of…
Isoelectronic series of oxygen deficient centers in silica: experimental estimation of homogeneous and inhomogeneous spectral widths
2008
We report nanosecond time-resolved photoluminescence measurements on the isoelectronic series of oxygen deficient centers in amorphous silica related to silicon, germanium and tin atoms, which are responsible of fluorescence activities at approximately 4 eV under excitation at approximately 5 eV. The dependence of the first moment of their emission band on time and that of the radiative decay lifetime on emission energy are analyzed within a theoretical model able to describe the effects introduced by disorder on the optical properties of the defects. We obtain separate estimates of the homogeneous and inhomogeneous contributions to the measured emission line width, and we derive homogeneou…
Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
2007
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN/GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at similar to 420 nm is achieved under pulsed excitation at room temperature for a peak power density of 400 kW/cm(2). The lasing emission linewidth is down to 0.033 nm.
Pressure dependence of the exciton absorption and the electronic subband structure of aGa0.47In0.53As/Al0.48In0.52As multiple-quantum-well system
1992
We have measured the optical absorption of a ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As/${\mathrm{Al}}_{0.48}$${\mathrm{In}}_{0.52}$As multiple quantum well at 10 K for pressures up to 7 GPa. The energies of optical transitions between heavy- and light-hole subbands and electron levels of the wells show a blueshift with pressure similar to the bulk lowest direct band gap. We observe a decrease with pressure of the energy splitting between heavy- and light-hole subbands with the same quantum number n. From the analysis of the absorption line shape, we have obtained the pressure dependences of exciton binding energies, oscillator strengths, and linewidths. These results are interpreted in…
Analysis of the transition from normal modes to local modes in a system of two harmonically coupled Morse oscillators
1992
The system consisting of two Morse oscillators coupled via either a potential or a kinetic quadratic term is considered. The corresponding classical equations of motion have been numerically integrated and the initial conditions have been systematically analyzed in the regime of low total excitation energy of the system. Particular attention was paid to the full characterization of an intermediate type of motion, herein called transition mode, which appears at total energy values in between those typical of normal modes and those where local and normal modes coexist. A previously proposed perturbative approach (Jaffe C, Brumer P (1980) J Chem Phys 73:5646) is reanalyzed and compared with th…