Search results for "Oxynitride"
showing 10 items of 11 documents
Savaime sklindančios aukštatemperatūrinės sintezės būdu gautų aliuminio oksinitrido miltelių ir jų keramikų optinės savybės
2021
The reported study was funded by RFBR according to the Research Project No. 19-08-00655. V.P. acknowledges the State Research Program ‘Aug-stas enerģijas fizika un paātrinātāju tehnoloģijas’ (Projekta Nr. VPP-IZM-CERN-2020/1-0002). The Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the H2020-WIDESPREAD-01-2016-2017-Teaming Phase2 under Grant Agreement No. 739508, Project CAMART2.
A Novel High‐Pressure Tin Oxynitride Sn 2 N 2 O
2020
Chemistry - a European journal in Press(in Press), chem.201904529 (2019). doi:10.1002/chem.201904529
Growth of titanium oxynitride layers by short pulsed Nd:YAG laser treatment of Ti plates: Influence of the cumulated laser fluence.
2009
International audience; Titanium oxynitride layerswere formed by surface laser treatment of Ti plates in air using a Nd:YAG laser source of short pulse duration about 5 ns. The cumulated laser fluence was varied in the 100–1200 J cm2 range and its influence on the composition and the structure of the formed layers was studied by different characterization techniques providing physico-chemical and structural information. It was shown that the laser treatment induces the insertion of light elements as O, N and C in the formed layer with the amount increasing with the laser fluence. The in-depth composition of the layers and the co-existence of different phases were also studied. The way in wh…
Phase mixture in MOCVD and reactive sputtering TiOxNy thin films revealed and quantified by XPS factorial analysis.
2006
Abstract Titanium oxynitride thin films have been deposited by low-pressure metalorganic chemical vapour deposition and reactive sputtering. The growth temperature for chemical vapour-deposited films and water vapour partial pressure for sputter-deposited films have been used to modulate the chemical composition. Both series have been analysed using X-ray photoelectron spectroscopy (XPS) in order to describe the structure of the materials using a factorial analysis approach. Titanium and metalloid concentrations have also been determined and compared to an elemental analysis performed using Rutherford backscattering spectroscopy and nuclear reaction analysis. The two deposition methods led …
Structural and electrical properties of magnetron sputtered Ti(ON) thin films:The case of TiN doped in situ with oxygen.
2009
International audience; Incorporation of oxygen into TiN lattice results in formation of titanium oxynitrides, TiOxNy that have become particularly interesting for photocatalytic applications. Elaboration as well as characterization of TiN and in situ oxygen-doped thin films is the subject of this paper. Thin films, 250–320nm in thickness, have been deposited by dc-pulsed magnetron reactive sputtering from Ti target under controllable gas flows of Ar, N2 and O2. Optical monitoring of Ti plasma emission line at = 500nm has been implemented in order to stabilize the sputtering rate. Scanning electron microscopy (SEM), X-ray diffraction in grazing incidence (GIXRD), micro-Raman spectroscopy, X…
Anisotropic and non-heterogeneous continuum percolation in titanium oxynitride thin columnar films
2002
International audience; We report the percolation behaviour of the conductivity of titanium oxynitride films grown by low-pressure metal-organic chemical vapour deposition, composed of TiNxOy mixed with TiO2. The usual DC parameters (t, s and Φc), obtained from the effective media theory equations, are compared to the universal values (s = sun while t < tun because of the film anisotropy). This is the first example of an electrical continuum percolation applied to columnar films with chemically similar conducting and insulating units (non-heterogeneous percolation) whose mixing is based upon the growth temperature during the film growth.
Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
2019
Abstract Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Fight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s−1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s−1). The better SRV with AlOxNy film is due …
Sputtered SiOxNy thin films: improving optical efficiency of liquid crystal diffuser elements in multi-focal near-to-eye display architecture
2021
In this work we present reactive sputtered SiOxNy films with a variable refractive index as a convienent solution for contrast improvement of liquid crystal diffuser multi stacks in near-to-eye AR/VR displays. The focus concerns minimization of light reflections between internal structures, in particular ITO, by optimizing internal layers through tailored properties of thin film coatings, as well as subsequent laser patterning of thin film stack. Inorganic thin films have been deposited on glass by physical vapor deposition. Corresponding refractive index, thickness, uniformity and dielectric characteristics and other electro-optical properties have been measured and their impact on the res…
Cathodoluminescence and photoluminescence study of trap centers in amorphous silicon oxynitride
2002
Amorphous silicon oxynitride (a-SiO/sub x/N/sub y/) films with different compositions were prepared using low-pressure chemical vapor deposition (LPCVD) technique, The cathodoluminescence and photoluminescence of this samples were measured from the red band to the ultraviolet band to study the trap centers in silicon oxynitride. A 1.8-1.9 eV band was found and is attributed to the oxygen and nitrogen atoms with unpaired electrons whereas the 2.7 eV band is attributed to two-fold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to due due to the Si-Si bonds.
Evolution of the microstructure of sputter deposited TaAlON thin films with increasing oxygen partial pressure
2021
Recently, quaternary oxynitrides of transition metals and aluminum have attracted increasing interest due to their tunable properties. Within the present work, a series of TaAl(O)N films was sputter deposited using constant nitrogen and varying oxygen partial pressures. The films were grown from single element Ta and Al targets. The deposition parameters were adjusted to obtain a Ta/Al atomic ratio of ~50/50 for the oxygen-free film and were held constant for the following depositions, with the exception of the increasing oxygen partial pressure and compensatory decreasing argon partial pressure. Elastic recoil detection analysis revealed oxygen contents of up to ~26 at.%, while the nitroge…