Search results for "PASS"
showing 10 items of 1629 documents
Highly photoluminescent, dense solid films from organic-capped CH3NH3PbBr3 perovskite colloids
2018
The preparation of densely-packed films from hybrid lead halide perovskite nanocrystals is not trivial, as during assembly into the solid state both the charge transport and photoluminescence can be substantially altered. The objective of the present study was to retain the pre-engineered confined morphologies of hybrid lead halide perovskite nanocrystals in densely-packed solid films by using short organic ligands. Therefore, the roles of the organic ligands would be to provide stable colloids and a good passivation of the nanoparticle surface, as well as to enable the efficient assembly of the nanoparticles in the solid state. We report here an effective and reproducible process to deposi…
Efficient Photo- and Electroluminescence by Trap States Passivation in Vacuum-Deposited Hybrid Perovskite Thin Films
2018
Methylammonium lead iodide (MAPI) has excellent properties for photovoltaic applications, although it typically shows low photoluminescence quantum yield. Here, we report on vacuum-deposited MAPI perovskites obtained by modifying the methylammonium iodide (MAI) to PbI2 ratio during vacuum deposition. By studying the excitation density dependence of the photoluminescence lifetime, a large concentration of trap states was deduced for the stoichiometric MAPI films. The use of excess MAI during vacuum processing is capable of passivating these traps, resulting in luminescent films which can be used to fabricate planar light-emitting diodes with quantum efficiency approaching 2%.
Effect of silicon on corrosion resistance of Ti–Si alloys
2011
Abstract The corrosion resistance of Ti–Si alloys has been studied in acid solutions and the alloys exhibit a high resistance to corrosion. SEM examinations combined with EDAX allowed to conclude that the passive films on Ti–Si alloys are mainly composed of TiO 2 /SiO 2 oxides. XPS analysis indicated the formation of Si–O and Si–O–Ti bonds in the passive film, respectively corresponding to SiO 2 and Si-doping TiO 2 . The effect of silicon on the corrosion was correlated to the formation of a stable SiO 2 film, Si-doping on TiO 2 and the extended lattice imperfections formed along TiO 2 /SiO 2 grain boundaries and phase-boundaries. The calculated donor densities based on the point defect mod…
Mechanism of large oscillations of anodic potential during anodization of silicon in H3PO4/HF solutions
2000
Abstract Effect of large oscillations of electrical potential during anodic polarization of silicon in electrolytes composed of phosphoric and hydrofluoric acids has been reported. The oscillations last hours without damping if experimental conditions are optimal. Changes of temperature, anodic current density, intensity of stirring, etc. quench them or convert into less periodic ones. The oscillations are of very high amplitude (typically 15 V) with a period ranging from 18 to 30 s. Scanning electron microscopy (SEM)-imaging of the samples experiencing the oscillatory kinetic behaviour shows unambiguously that the stage of the anodic voltage growth is assisted by the formation of a thin (5…
Character of the Reaction between Molecular Hydrogen and a Silicon Dangling Bond in Amorphous SiO2
2007
The passivation by diffusing H2 of silicon dangling bond defects (E′ centers, O3tSi•) induced by laser irradiation in amorphous SiO2 (silica) is investigated in situ at several temperatures. It is found that the reaction between the E′ center and H2 requires an activation energy of 0.39 eV and that its kinetics is not diffusionlimited. The results are compared with previous findings on the other fundamental paramagnetic point defect in silica, the oxygen dangling bond, which features completely different reaction properties with H2. Furthermore, a comparison is proposed with literature data on the reaction properties of surface E′ centers, of E′ centers embedded in silica films, and with th…
Kinetics of Bulk Lifetime Degradation in Float‐Zone (FZ) Silico n : Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen vs …
2020
Float-zone (FZ) silicon often has grown-in defects that are thermally activated in a broad temperature window (≈300–800 °C). These defects cause efficient electron-hole pair recombination, which deteriorates the bulk minority carrier lifetime and thereby possible photovoltaic conversion efficiencies. Little is known so far about these defects which are possibly Si-vacancy/nitrogen-related (VxNy). Herein, it is shown that the defect activation takes place on sub-second timescales, as does the destruction of the defects at higher temperatures. Complete defect annihilation, however, is not achieved until nitrogen impurities are effused from the wafer, as confirmed by secondary ion mass spectro…
Long-cavity all-fiber ring laser actively mode locked with an in-fiber bandpass acousto-optic modulator.
2013
We demonstrate low-frequency active mode locking of an erbium-doped all-fiber ring laser. As the mode locker, we used a new in-fiber bandpass acousto-optic modulator showing 74% modulation depth, 3.7 dB power insertion losses, 4.5 nm of optical bandwidth, and 20 dB of nonresonant light suppression. The laser generates 330 ps mode-locked pulses over a 10 ns pedestal, at a 1.538 MHz frequency, with 130 mW of pump power. Fil: Cuadrado Laborde, Christian Ariel. Universidad de Valencia; España. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico La Plata. Centro de Investigaciones Opticas (i); Argentina. Provincia de Buenos Aires. Gobernación. Comisión de In…
Passivity Breakdown: Development and Application of Local Chemical and Electrochemical Probe Methods
2018
Abstract The most identified classes of phenomena at the origin of the passivity breakdown and the electrochemical and chemical factors controlling the induced localized corrosion are summarized before introducing the scientific concepts at the origin of the design of the local probe techniques used in recent advances in understanding localized corrosion processes. Examples concerning the surface reactivity of aluminium alloys are presented to support a final discussion on the needs for experimental developments with capabilities to support modelling.
ZnS Ultrathin interfacial layers for optimizing carrier management in Sb2S3-based photovoltaics
2021
Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over th…
Impurity analyses of silicon wafers from different manufacturing routes and their impact on LID of finished solar cells
2013
Summarizes the measurements of impurity concentrations in directionally solidified silicon ingots from different feedstocks. The substitutional Carbon and interstitial Oxygen are measured on as-sawn wafers using FTIR. Active iron concentration is mapped on a-Si:H passivated wafers. It is observed that these impurities present in Elkem Solar Grade Silicon (ESS™) concentrations are comparable to the standard polysilicon which are in the acceptable ranges for silicon for solar industry. The measured LID of the finished solar cells is also comparable.