Search results for "PHOTODETECTORS"

Fast-Response Single-Nanowire Photodetector Based on ZnO/WS 2 Core/Shell Heterostructures

2018

This work was supported by the Latvian National Research Program IMIS2 and ISSP project for Students and Young Researchers Nr. SJZ/2016/6. S.P. is grateful to the ERA.Net RUS Plus WATERSPLIT project no. 237 for the financial support. S.V. is grateful for partial support by the Estonian Science Foundation grant PUT1689.

Photoconductive properties of Bi2S3nanowires

2015

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…

Growth kinetics of colloidal Ge nanocrystals for light harvesters

2016

Colloidal Ge nanocrystals (NCs) are gaining increased interest because of their potential application in low-cost optoelectronic and light harvesting devices. However, reliable control of colloidal NC synthesis is often an issue and a deeper understanding of the key-role parameters governing NC growth is highly required. Here we report an extended investigation on the growth of colloidal Ge NCs synthesized from a one-pot solution based approach. A systematic study of the effects of synthesis time, temperature and precursor concentration is elucidated in detail. X-ray diffraction (XRD) analysis reveals the presence of crystalline Ge NCs with a mean size (from 5 to 35 nm) decreasing with the …

Responsivity measurements of silicon carbide Schottky photodiodes in the UV range

2014

We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.

Integrated Optical Amplifier-Photodetector on a Wearable Nanocellulose Substrate

2018

Flexible optoelectronics has emerged as an outstanding platform to pave the road toward vanguard technology advancements. As compared to conventional rigid substrates, a flexible technology enables mechanical deformation while maintaining stable performance. The advantages include not only the development to novel applications, but also the implementation of a wearable technology directly in contact with a curved surface. Here the monolithic integration of a perovskite‐based optical waveguide amplifier together with a photodetector on a nanocellulose substrate is shown to demonstrate the feasibility of a stretchable signal manipulation and receptor system fabricated on a biodegradable mater…

Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology

2013

In this work, we investigate the spectral response of metal-oxide- semiconductor photodetectors based on Ge nanoclusters (NCs) embedded in a silicon dioxide (SiO2) matrix. The role of Ge NC size and density on the spectral response was evaluated by comparing the performance of PDs based on either densely packed arrays of 2 nm-diameter NCs or a more sparse array of 8 nm-diameter Ge NCs. Our Ge NC photodetectors exhibit a high spectral responsivity in the 500-1000 nm range with internal quantum efficiency of ~ 700% at - 10 V, and with NC array parameters such as NC density and size playing a crucial role in the photoconductive gain and response time. We find that the configuration with a more…

Nonlocal quantum-field correlations and detection processes in quantum-field theory

2009

Quantum detection processes in quantum field theory (QFT) must play a key role in the description of quantum-field correlations, such as the appearance of entanglement, and of causal effects. We consider the detection in the case of a simple QFT model with a suitable interaction to exact treatment, consisting of a quantum scalar field coupled linearly to a classical scalar source. We then evaluate the response function to the field quanta of two-level pointlike quantum model detectors, and analyze the effects of the approximation adopted in standard detection theory. We show that the use of the RWA, which characterizes the Glauber detection model, leads in the detector response to nonlocal …

Solar blind detectors based on AlGaN grown on sapphire

2005

Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…

Photodétecteurs UV à base GaAlN

2004

Ligand-Length Modification in CsPbBr3 Perovskite Nanocrystals and Bilayers with PbS Quantum Dots for Improved Photodetection Performance

2020

Nanocrystals surface chemistry engineering offers a direct approach to tune charge carrier dynamics in nanocrystals-based photodetectors. For this purpose, we have investigated the effects of altering the surface chemistry of thin films of CsPbBr3 perovskite nanocrystals produced by the doctor blading technique, via solid state ligand-exchange using 3-mercaptopropionic acid (MPA). The electrical and electro-optical properties of photovoltaic and photoconductor devices were improved after the MPA ligand exchange, mainly because of a mobility increase up to 5 &times