Search results for "PHOTOELECTRON"

Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization

2017

One of the main challenges to exploit molybdenum disulfide (MoS2) potentialities for the next-generation complementary metal oxide semiconductor (CMOS) technology is the realization of p-type or ambipolar field-effect transistors (FETs). Hole transport in MoS2 FETs is typically hampered by the high Schottky barrier height (SBH) for holes at source/drain contacts, due to the Fermi level pinning close to the conduction band. In this work, we show that the SBH of multilayer MoS2 surface can be tailored at nanoscale using soft O-2 plasma treatments. The morphological, chemical, and electrical modifications of MoS2 surface under different plasma conditions were investigated by several microscopi…

Tailoring of highly porous SnO2 and SnO2-Pd thin films

2019

Abstract Tin oxide is a material that attracts attention due to variety of technological applications. The main parameters that influence its properties are morphology, crystalline structure and stoichiometry. Researchers try to develop nanostructured thin films with tunable parameters that would conform its technological applications. Herein, we report on the preparation and characterization of highly porous SnO2 and Pd-doped SnO2 thin films. These films were deposited in the form of nanorods with controllable geometry. Such morphology was achieved by utilizing glancing angle deposition (GLAD) with assisted magnetron sputtering. This arrangement allowed preparation of slanted pillars, zig-…

Estimation of band alignment at CdS/Cu 2 ZnSnS 4 hetero‐interface by direct XPS measurements

2020

Chemical composition of two-photon oxidized graphene

2017

Chemical composition of two-photon oxidized single-layer graphene is studied by micrometer X-ray photoelectron spectroscopy (XPS). Oxidized areas with a size of 2 × 2 μm2 are patterned on graphene by tightly focused femtosecond pulsed irradiation under air atmosphere. The degree of oxidation is controlled by varying the irradiation time. The samples are characterized by four wave mixing (FWM) imaging and Raman spectroscopy/imaging. Micrometer-XPS is used to study local chemical composition of oxidized areas. XPS imaging shows good contrast between oxidized and non-oxidized areas. Gradual oxidation is observed from growth of signals attributed mainly to hydroxyl (Csingle bondOH) and epoxide …

Understanding the2pcore-level spectra of manganese: Photoelectron spectroscopy experiments and Anderson impurity model calculations

2007

Using high-resolution core-level photoelectron spectroscopy and modified Anderson impurity model calculations, we study the $\mathrm{Mn}\phantom{\rule{0.2em}{0ex}}2p$ spectrum of manganese metal and resolve the current debate about its spectral shape. An unusual satellite feature, $1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ from the main peak, is observed in the $\mathrm{Mn}\phantom{\rule{0.2em}{0ex}}2{p}_{3∕2}$ spectrum of a thick Mn layer grown on Al. It originates from intra-atomic multiplet effect related to Mn atoms with large local moment. The satellite decreases in intensity for thin Mn layers and for Al deposition on bulklike Mn because of enhanced $\mathrm{Mn}\phantom{\rule{0.2em}{0e…

Substrate and atmosphere influence on oxygen p-doped graphene

2016

Abstract The mechanisms responsible for p-type doping of substrate supported monolayer graphene (Gr) by thermal treatments in oxygen ambient have been investigated by micro-Raman spectroscopy, atomic force microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS), considering commonly employed dielectric substrates, such as SiO 2 and Al 2 O 3 thin films grown on Si. While a high p-type doping (∼10 13  cm −2 ) is observed for Gr on SiO 2 , no significant doping is found for Gr samples on the Al 2 O 3 substrate, suggesting a key role of the Gr/SiO 2 interface states in the trapping of oxygen responsible for the Gr p-type doping. Furthermore, we investigated the doping stability of Gr on SiO…

Energy level determination in bulk heterojunction systems using photoemission yield spectroscopy: case of P3HT:PCBM

2018

Financial support provided by Scientific Research Project for Students and Young Researchers Nr. SJZ2015/20 realized at the Institute of Solid State Physics, University of Latvia, is greatly acknowledged. This work has been supported by the Latvian State Research Program on Multifunctional Materials IMIS2. Jennifer Mann from Physical Electronics is greatly acknowledged for providing UPS data.

Hybrid paper–TiO2 coupled with a Cu2O heterojunction: an efficient photocatalyst under sun-light irradiation

2016

Hybrid paper-TiO2, paper-Cu2O-TiO2 and paper-TiO2-Cu2O photocatalysts were prepared via a non-hydrolytic sol-gel process followed by mild hydrothermal treatment to generate the TiO2 layer, and a reduction process to form the Cu2O nanoparticles. The hybrid photocatalysts have been characterized by Raman, TGA, FE-SEM, UV-Vis and XPS. The immobilized TiO2 was found to form a homogeneous thin layer composed of nanoparticles with a size smaller than 10 nm. The Cu2O nanoparticles with sizes of 30-100 nm were generated either on the top of the TiO2 layer or by reduction of Cu2+ ions. All the prepared hybrid catalysts showed efficient photocatalytic properties for the degradation of toluidine when …

Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

2008

This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…

Mixed silane self assembled monolayers and their in situ modification

1998

Mixed self assembled silane monolayers were prepared by coadsorption of Br and methyl terminated trichlorosilanes. By subsequent in situ modification the Br groups were converted into amino groups which can be used to tether polyglutamates to the surface. Here we describe the characterization of the monolayers by means of contact angle measurements and X-ray photoelectron spectroscopy (XPS). Both methods clearly indicate that the Br terminated silane is preferentially adsorbed from the solution. Following the in situ modification by XPS a yield of approximately 80% was determined for the substitution of the bromine by azide, whereas the yield for subsequent reduction to the amine is close t…