Search results for "Phosphide"
showing 10 items of 19 documents
CCDC 1995923: Experimental Crystal Structure Determination
2020
Related Article: Dinh Cao Huan Do, Petra Vasko, M. Ángeles Fuentes, Jamie Hicks, Simon Aldridge|2020|Dalton Trans.|49|8701|doi:10.1039/D0DT01447H
The Taming of Redox‐Labile Phosphidotitanocene Cations
2019
International audience; Tame d0 phosphidotitanocene cations stabilized with a pendant tertiary phosphane arm are reported. These compounds were obtained by one-electron oxidation of d1 precursors with [Cp2Fe][BPh4]. The electronic structure of these compounds was studied experimentally (EPR, UV/Vis, and NMR spectroscopy, X-ray diffraction analysis) and through DFT calculations. The theoretical analysis of the bonding situation by using the electron localization function (ELF) shows the presence of π-interactions between the phosphido ligand and Ti in the d0 complexes, whereas dπ–pπ repulsion prevents such interactions in the d1 complexes. In addition, CH–π interactions were observed in seve…
Reappraising Schmidpeter's bis(iminophosphoranyl)phosphides: coordination to transition metals and bonding analysis
2020
The synthesis and characterization of a range of bis(iminophosphoranyl)phosphide (BIPP) group 4 and coinage metals complexes is reported. BIPP ligands bind group 4 metals in a pseudo fac-fashion, and the central phosphorus atom enables the formation of d0–d10 heterobimetallic complexes. Various DFT computational tools (including AIM, ELF and NCI) show that the phosphorus–metal interaction is either electrostatic (Ti) or dative (Au, Cu). A bridged homobimetallic Cu–Cu complex was also prepared and its spectroscopic properties were investigated. The theoretical analysis of the P–P bond in BIPP complexes reveals that (i) BIPP are closely related to ambiphilic triphosphenium (TP) cations; (ii) …
Tantalocenehydridephosphorus chemistry.
2002
Abstract The aim of this paper is to look for a better knowledge of the behaviour of bent tantalocenes that bear hydrides, phosphorus PR2X (R=Me, Ph; X=H, lone pair) and cyclopentadienyl (Cp=C5H5, Cp′=C5H2tBu(Me)2, Cp*=C5Me5) ligands. An orbital control of regioselectivity of insertion of the PR2 phosphide fragment of chlorophosphines PR2Cl into the central TaH bond of trihydrides Cp2TaH3 leading to the formation of metallophosphonium cations is discussed. Neutralisation of cationic complexes with strong bases leads either to the Ta(V)–phosphide or to the Ta(III)–phosphine species depending on the nature of the cyclopentadienyl ligand; good electron donor Cp′ and Cp* rings favour the forma…
Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP
2011
In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm 2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster. © 2011 Optical Society of America.
Modulated Crystal Structure and Electronic Properties of Semiconductor Cu47Si91P144
2000
Crystals of the copper silicon phosphide were synthesized by the iodine gas transport technique. The x-ray single crystal methods revealed a big superstructure with the lattice parameters a = b = 44.510 and c = 20.772 A and a basic tetragonal substructure with a = 3.7092 and c = 5.1930 A. Analysis of the intensities showed that the superstructure has a 1/2,1/2,1/2 tetragonal substructure with a = 22.255 and c = 10.386 A. This 1/2,1/2,1/2 substructure (Cu47Si91P144) and the basic tetragonal structure (Cu0.71Si1.29P2) were solved by the direct methods and refined in the I4m2 space group. The phosphide is a semiconductor with a small energy gap of 0.0269(1) eV. The electrical properties are co…
Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group
2021
In this work, critical values of pore-formation in electrochemical machining of semiconductors of A 3 B 5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.
Positron lifetime measurements on neutron‐irradiated InP crystals
1996
Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals. navarrof@evalvx.ific.uv.es ; Jose.Ferrero@uv.es
Texturing of Indium Phosphide for Improving the Characteristics of Space Solar Cells
2021
This paper discusses and demonstrates the usefulness and prospects of using textured layers of indium phosphide as a material for space solar cells. Such designs improve the performance of the photovoltaic converter by increasing the effective area and surface roughness. Thus, it minimizes the background reflectivity of the surface. Textured layers on the InP surface were obtained by electrochemical etching using a bromous acid solution.
Morphology Study of the Porosity of the GaP Surface Layer Formed on the Surface of a Single Crystal by Electrochemical Etching
2021
The article analyzes the morphological characteristics of a porous GaP surface layer formed on the surface of monocrystalline gallium phosphide by electrochemical etching. The correlations between the etching time and the appropriate size, shape and density of pores have been established and studied in detail.