Search results for "RADIATION"

showing 10 items of 5298 documents

Rock-salt CdZnO as a transparent conductive oxide

2018

Transparent conducting oxides (TCOs) are widely used in applications from solar cells to light emitting diodes. Here, we show that the metal organic chemical vapor deposition (MOCVD)-grown, rock-salt CdZnO ternary, has excellent potential as a TCO. To assess this compound, we use a combination of infrared reflectance and ultraviolet-visible absorption spectroscopies, together with Hall effect, to determine its optical and electrical transport characteristics. It is found that the incorporation of Zn produces an increment of the electron concentration and mobility, yielding lower resistivities than those of CdO, with a minimum of 1.96 × 10 − 4 Ω · cm for a Zn content of 10%. Moreover, due to…

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)Band gapAnalytical chemistry02 engineering and technologyChemical vapor deposition021001 nanoscience & nanotechnology01 natural scienceslaw.inventionlaw0103 physical sciencesMetalorganic vapour phase epitaxy0210 nano-technologyTernary operationAbsorption (electromagnetic radiation)Deposition (law)Transparent conducting filmLight-emitting diodeApplied Physics Letters
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Low-temperature luminescence of CdI2 under synchrotron radiation

2020

Synchrotron radiation is applied to study visible and UV luminescence spectra and their excitation spectra of undoped as well as In and Sb doped cadmium iodide crystals at 10 K. The origin of principal luminescence bands and the role of impurities in the formation of emission centers are discussed. The luminescence properties have been explained based on the electronic structure of CdI2 crystals.

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)Condensed Matter::OtherExcitation spectraDopingAnalytical chemistryPhysics::OpticsGeneral Physics and AstronomySynchrotron radiationLuminescence spectraElectronic structure01 natural sciences3. Good healthCondensed Matter::Materials Sciencechemistry.chemical_compoundCadmium iodidechemistryImpurityCondensed Matter::Superconductivity0103 physical sciencesCondensed Matter::Strongly Correlated Electrons010306 general physicsLuminescenceLow Temperature Physics
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Assembly of microparticles by optical trapping with a photonic crystal nanocavity

2012

International audience; In this work, we report the auto-assembly experiments of micrometer sized particles by optical trapping in the evanescent field of a photonic crystal nanocavity. The nanocavity is inserted inside an optofluidic cell designed to enable the real time control of the nanoresonator transmittance as well as the real time visualization of the particles motion in the vicinity of the nanocavity. It is demonstrated that the optical trap above the cavity enables the assembly of multiple particles in respect of different stable conformations.

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)Condensed Matter::Otherbusiness.industryNanophotonicsPhysics::Optics02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesMicrometreResonatorRESONATORSOpticsRadiation pressureOptical tweezers0103 physical sciencesTransmittanceOptoelectronicsSelf-assembly0210 nano-technologybusinessPhotonic crystal
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Spin–orbit torque driven multi-level switching in He + irradiated W–CoFeB–MgO Hall bars with perpendicular anisotropy

2020

We have investigated the spin–orbit torque-driven magnetization switching in W/CoFeB/MgO Hall bars with perpendicular magnetic anisotropy. He+ ion irradiation through a mask has been used to reduce locally the effective perpendicular anisotropy at a Hall cross. Anomalous Hall effect measurements combined with Kerr microscopy indicate that the switching process is dominated by domain wall (DW) nucleation in the irradiated region followed by rapid domain propagation at a current density as low as 0.8 MA/cm2 with an assisting in-plane magnetic field. Thanks to the implemented strong pinning of the DW at the transition between the irradiated and the non-irradiated region, an intermediate Hall r…

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsNucleation02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesIonMagnetic fieldMagnetization[SPI]Engineering Sciences [physics]Domain wall (magnetism)Hall effect0103 physical sciencesIrradiation0210 nano-technologyCurrent densityComputingMilieux_MISCELLANEOUS
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2019

We systematically study the pump-wavelength dependence of terahertz pulse generation in thin-film spintronic THz emitters composed of a ferromagnetic CoFeB layer between adjacent nonmagnetic W and Pt layers. We find that the efficiency of THz generation is essentially flat for excitation by 150 fs pulses with center wavelengths ranging from 900 to 1500 nm, demonstrating that the spin current does not depend strongly on the pump photon energy. We show that the inclusion of dielectric overlayers of TiO2 and SiO2, designed for a particular excitation wavelength, can enhance the terahertz emission by a factor of up to two in field.

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)SpintronicsField (physics)business.industryTerahertz radiationPhysics::Optics02 engineering and technologyDielectricPhoton energy021001 nanoscience & nanotechnology01 natural sciencesCondensed Matter::Materials ScienceWavelengthFerromagnetism0103 physical sciencesOptoelectronics0210 nano-technologybusinessExcitationApplied Physics Letters
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Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy

2019

We study the influence of He+ irradiation induced interface intermixing on magnetic domain wall (DW) dynamics in W-CoFeB (0.6 nm)-MgO ultrathin films, which exhibit high perpendicular magnetic anisotropy and large Dzyaloshinskii-Moriya interaction (DMI) values. Whereas the pristine films exhibit strong DW pinning, we observe a large increase in the DW velocity in the creep regime upon He+ irradiation, which is attributed to the reduction of pinning centers induced by interface intermixing. Asymmetric in-plane field-driven domain expansion experiments show that the DMI value is slightly reduced upon irradiation, and a direct relationship between DMI and interface anisotropy is demonstrated. …

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)SpintronicsMagnetic domainCondensed matter physics530 PhysicsPerpendicular magnetic anisotropy02 engineering and technology530 Physik021001 nanoscience & nanotechnology01 natural sciences[SPI]Engineering Sciences [physics]Domain wall (magnetism)Creep[PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]0103 physical sciencesPerpendicular anisotropyIrradiation[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]0210 nano-technologyAnisotropyComputingMilieux_MISCELLANEOUS
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First principles simulations on migration paths of oxygen interstitials in magnesium aluminate spinel

2018

This study has been carried out within the framework of the EURO fusion Consortium and has been provided funding from the Euratom research and training program 2014–2018 under grant agreement No. 633053. The authors are indebted to A.I. Popov, A.C. Lushchik and R. Vila for stimulating discussions. Technical assistance from O. Lisovski is appreciated too. The views and opinions expressed herein do not necessarily reflect those of the European Commission. Calculations have been performed using Marconi supercomputer system based in Italy at CINECA Supercomputing Centre.

010302 applied physicsMaterials sciencePhysicsdiffusionThermodynamicschemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsRadiation defects01 natural sciencesOxygenElectronic Optical and Magnetic MaterialsOxygeninterstitial oxygenchemistry0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Magnesium-aluminium spinelDiffusion (business)0210 nano-technologyfirst principles calculationsphysica status solidi (b)
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Fluence effect on ion-implanted As diffusion in relaxed SiGe

2005

A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.

010302 applied physicsMaterials scienceSiliconAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_element02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesFluenceIonSecondary ion mass spectrometrychemistry0103 physical sciencesRadiation damageDiffusion (business)0210 nano-technologyArsenicEurophysics Letters
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SiC Power Switches Evaluation for Space Applications Requirements

2016

We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology push for a new generation of space electronics units. Silicon devices qualified for space systems above 600V for the switches and 1200V for the rectifiers are not available due to performances limitations of Si. Among the typical static and dynamic characterization, we have performed temperature and power stress and HTRB tests. More remarkably, we h…

010302 applied physicsMaterials scienceTechnology pushbusiness.industryMechanical EngineeringElectrical engineeringJFET02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesPower (physics)Stress (mechanics)Reliability (semiconductor)Mechanics of Materials0103 physical sciencesMOSFETElectronic engineeringGeneral Materials SciencePower MOSFET0210 nano-technologybusinessRadiation hardeningMaterials Science Forum
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Emerging blue-UV luminescence in cerium doped YAG nanocrystals

2016

Physica status solidi / Rapid research letters 10(6), 475 - 479(2016). doi:10.1002/pssr.201600041

010302 applied physicsMaterials sciencebusiness.industryDopingchemistry.chemical_elementSynchrotron radiationPhosphor02 engineering and technologyScintillator021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences530CeriumchemistryNanocrystal0103 physical sciencesOptoelectronicsGeneral Materials Scienceddc:5300210 nano-technologybusinessLuminescence
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