Search results for "RAMAN"
showing 10 items of 1328 documents
Conformational Changes and Charge Transfer in Biomolecules Resolved Using Dynamic Enhanced Raman Correlation Spectroscopy
2019
International audience; In this contribution, we report that conforma-tional changes of molecules that are often buried in a wide-distributed Gaussian distribution can be discerned by analyzing the dynamics of specific Raman lines. We investigate the pertinence of the auto-and cross-correlation functions applied to the dynamics of three Raman lines of an amino acid, the tryptophan. The cross-correlation between intensity and the Raman band is an indicator of the charge transfer during the diffusion limited reaction of tryptophan and the gold surface. The Pećlet number Pe can provide a valuable indicator of the convective and/or diffusive features of each Raman band. Adsorption induced confo…
Lattice dynamics study of scheelite tungstates under high pressure I.BaWO4
2006
Room-temperature Raman scattering has been measured in lead tungstate up to 17 GPa. We report the pressure dependence of all the Raman modes of the tetragonal scheelite phase PbWO4-I or stolzite, space group I41 /a, which is stable at ambient conditions. Upon compression the Raman spectrum undergoes significant changes around 6.2 GPa due to the onset of a partial structural phase transition to the monoclinic PbWO4-III phase space group P21 /n. Further changes in the spectrum occur at 7.9 GPa, related to a scheelite-to-fergusonite transition. This transition is observed due to the sluggishness and kinetic hindrance of the I → III transition. Consequently, we found the coexistence of the sche…
Raman study and theoretical calculations of strain in GaN quantum dot multilayers
2006
Changes in strain and phonon mode energy in stacks of self-assembled GaN quantum dots embedded in AlN have been studied by means of Raman spectroscopy as a function of the number of periods. The ${E}_{2H}$ phonon modes related to the quantum dots and AlN spacers are clearly resolved, and their energies allow monitoring the state of strain of the dots and AlN spacers simultaneously. The evolution of the measured phonon frequencies and the associated strains are discussed in comparison with theoretical calculations of the inhomogeneous strain distribution in a system of coherent misfitting inclusions.
Vibrational modes and strain in GaN/AlN quantum dot stacks: dependence on spacer thickness
2007
We have investigated the influence of spacer thickness on the vibrational and strain characteristics of GaN/AlN quantum dot multilayers (QD). The Raman shift corresponding to the E2h vibrational mode related to the QDs has been analyzed for AlN thicknesses ranging from 4.4 nm to 13 nm, while the amount of GaN deposited in each layer remained constant from sample to sample. It is shown that there is a rapid blue shift of the GaN vibrational mode with spacer thickness when its value is smaller than 7 nm while it remains almost constant for thicker spacers. A rapid increase of the Raman line-width in the thicker samples is also observed. The experimental behavior is discussed in comparison wit…
Phonons of hexagonal BN under pressure: Effects of isotopic composition
2021
Raman scattering experiments on isotopically enriched hexagonal boron nitride have been performed under pressure up to 11 GPa at room temperature. The sublinear increase of the Raman-active E2g mode frequencies has been characterized. The pressure behavior has been analyzed by means of a bond-stiffness–bond-length scaling parameter γ which takes into consideration the vast differences in a- and c-axis compressibilities. The interlayer shear mode exhibits a γ parameter similar to that of graphite, and the mode frequency in isotopically pure samples separates faster at low pressures as a result of van der Waals interactions. Because of the extremely low a-axis compressibility, the intralayer …
Super-Ionic State Studies in LNTN Solid Solutions by Raman Spectroscopy
2012
Raman studies of the thermal phase transformations and structural disordering preceding transition to the super-ionic state in the Li0.12Na0.88TaуNb1-уO3 solid solution ceramics are reported. Disordering of the structure brought up by the extremely mobile Li+ ions at heating is found to be homogeneous and to proceed gradually. Disorientation and considerable deformation of the BO6 oxygen octahedrons facilitate translational mobility of the Li+ ions. The static disordering of the Nb5+ and Ta5+ sub-lattice caused by tantalum decreases the temperature of the phase transformation and increases the probability of transition to the super-ionic state supposed to occur over a broad temperature rang…
The effect of annealing temperature and time on synthesis of graphene thin films by rapid thermal annealing
2015
In this paper, we performed synthesis of graphene thin films by rapid thermal annealing (RTA) of thin nickel copper (Ni/Cu) layers deposited on spectroscopic graphite as a carbon source. Furthermore, we investigated the effect of annealing temperature and annealing time on formation and quality of synthesized graphene films. Raman spectroscopy study showed that annealing at lower temperatures results in formation of monolayer graphene films, while annealing at higher temperatures results in formation of multilayer graphene films. We used Raman mapping to determine the distribution of graphene sheets. Surface morphology of graphene thin films was investigated by atomic force microscopy and s…
Dynamic control of the operation regimes of a mode-locked fiber laser based on intracavity polarizing fibers: experimental and theoretical validation.
2012
[EN] An intracavity polarizing fiber is proposed to control the emission regime of a passively mode-locked fiber laser. Stable operation in self-starting high and low dispersion soliton mode-locking and 100 GHz multiwavelength regimes is demonstrated through numerical simulations and experimental validation. Mode-locking stability is ensured by a saturable absorber in the ring cavity. The effective selection of operation regime is dynamically carried out by controlling the intracavity polarization state.
WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
2020
International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…
Cobalt ferrite nanoparticles under high pressure
2015
We report by the first time a high pressure X-ray diffraction and Raman spectroscopy study of cobalt ferrite (CoFe2O4) nanoparticles carried out at room temperature up to 17 GPa. In contrast with previous studies of nanoparticles, which proposed the transition pressure to be reduced from 20–27 GPa to 7.5–12.5 GPa (depending on particle size), we found that cobalt ferrite nanoparticles remain in the spinel structure up to the highest pressure covered by our experiments. In addition, we report the pressure dependence of the unit-cell parameter and Raman modes of the studied sample. We found that under quasi-hydrostatic conditions, the bulk modulus of the nanoparticles (B0 = 204 GPa) is consid…