Search results for "Radiation effect"

showing 10 items of 111 documents

Concentration growth and thermal stability of gamma-ray induced Germanium lone pair center in Ge-doped sol-gel SiO2

2008

irradiation effectsSettore FIS/01 - Fisica Sperimentale
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Interpretation of gut microbiota data in the ‘eye of the beholder’: A commentary and re‐evaluation of data from ‘Impacts of radiation exposure on the…

2021

1.Evidence that exposure to environmental pollutants can alter the gut microbiota composition of wildlife includes studies of rodents exposed to radionuclides. 2.Antwis et al. (2021) used amplicon sequencing to characterise the gut microbiota of four species of rodent (Myodes glareolus, Apodemus agrarius, A. flavicollis and A. sylvaticus) inhabiting the Chernobyl Exclusion Zone (CEZ) to examine possible changes in gut bacteria (microbiota) and gut fungi (mycobiota) associated with exposure to radionuclides and whether the sample type (from caecum or faeces) affected the analysis. 3.The conclusions derived from the analyses of gut mycobiota are based on data that represent a mixture of inges…

jyrsijätsuolistomikrobistoTšernobylin ydinonnettomuusAnimals Wilddigestive systemsäteilybiologiaMicemicrobiotaAnimalsradioaktiivinen säteilyluonnonvaraiset eläimetEcology Evolution Behavior and SystematicsMammalsRadioisotopesBacteriaamplicon sequencingArvicolinaedigestive oral and skin physiologyFungiRadiation ExposureGastrointestinal MicrobiomeChernobyl Nuclear Accidentradiation effectsAnimal Science and ZoologyMurinaemycobiotadietMycobiomeJournal of Animal Ecology
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Single-event effects of space and atmospheric radiation on memory components

2017

Electronic memories are ubiquitous components in electronic systems: they are used to store data, and can be found in all manner of industrial, automotive, aerospace, telecommunication and entertainment systems. Memory technology has seen a constant evolution since the first practical dynamic Random- Access Memories (dynamic RAMs) were created in the late 60's. The demand for ever-increasing performance and capacity and decrease in power consumption was met thanks to a steady miniaturization of the component features: modern memory devices include elements barely a few tens of atomic layers thick and a few hundred of atomic layers wide. The side effect of this constant miniaturization was a…

koetusCOTSkäyttömuistitSRAMMRAMsingle-event effectmemoryRAMFRAMsäteilyfysiikkaradiation effectsflashmuistitsäteilynkestävyysradiation testingkosminen säteilyhiukkassäteilyflash-muistit
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Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

2018

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed

mallintaminenMaterials sciencePOWER DIODESSchottky diodesSINGLE-EVENT BURNOUT114 Physical sciences01 natural sciencesIonpower semiconductor devicesBARRIER DIODESTHERMAL-DAMAGEchemistry.chemical_compoundMolecular dynamicspuolijohteetsilicon carbide0103 physical sciencesSilicon carbideIrradiationElectrical and Electronic EngineeringSafety Risk Reliability and Quality010302 applied physicsta114ta213ionit010308 nuclear & particles physicsbusiness.industryionisoiva säteilyINORGANIC INSULATORSSchottky diodemodelingHeavy ion irradiationIRRADIATIONElectronic Optical and Magnetic MaterialschemistryionsOptoelectronicsDegradation (geology)Heavy ionbusinession radiation effectsIEEE Transactions on Device and Materials Reliability
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Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

2018

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation peerReviewed

mallintaminenpower semiconductor devicesionitsilicon carbidepuolijohteetionisoiva säteilySchottky diodesmodelingion radiation effects
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Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

2016

An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…

mikroelektroniikkaNuclear and High Energy PhysicsBandgap voltage referencecircuit topologysingle-event transient (SET)Integrated circuit01 natural scienceslaw.inventionsingle event transientsCurrent mirrorlawpulse quenchingsingle-event effects (SEE)ionizationradiation hardening by design (RHBD)0103 physical sciencesElectronic engineeringMicroelectronicsAnalog single-event transient (ASET); bandgap voltage reference (BGR); charge sharing; CMOS analog integrated circuits; heavy ion; ionization; parasitic bipolar effect; pulse quenching; radiation effects; radiation hardening by design (RHBD); reference circuits; single-event effects (SEE); single-event transient (SET); space electronics; Voltage reference; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic EngineeringAnalog single-event transient (ASET)Electrical and Electronic Engineeringparasitic bipolar effectreference voltage010302 applied physicsPhysicsbandgap voltage reference (BGR)charge sharingta114ta213010308 nuclear & particles physicsbusiness.industryanalog integrated circuitsTransistorspace electronicsPulse durationheavy ionPulse (physics)Voltage referenceNuclear Energy and EngineeringPulse-amplitude modulationreference circuitsmicroelectronicsradiation effectsspace applicationsOptoelectronicsbusinessCMOS analog integrated circuitsIEEE Transactions on Nuclear Science
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O2-Loading Treatment of Ge-Doped Silica Fibers: A Radiation Hardening Process

2016

International audience; The effects of a high-pressure O2-loading treatment on the radiation response of Ge-doped optical fibers (OFs) were investigated. We found that the incorporation of high concentration of interstitial molecular oxygen remarkably enhances the resistance to ionizing radiation of Ge-doped OFs in the UV-Visible domain and, at the same time, improves the transmission of UV light in the unirradiated OF sample. By comparison with previously reported results, the O2-loading treatment turned out to increase the radiation resistance of Ge-doped OFs more efficiently than F or Ce codoping. The understanding of such amelioration relies in basic radiation-induced mechanisms that we…

optical fiberMaterials scienceAnalytical chemistrychemistry.chemical_elementGermanium02 engineering and technologygermanosilicate01 natural scienceslaw.inventionIonizing radiationOpticslaw0103 physical sciencesIrradiationElectron paramagnetic resonanceRadiation hardeningRadiation resistance[PHYS]Physics [physics]radiation effect010308 nuclear & particles physicsbusiness.industryDopingSettore FIS/01 - Fisica SperimentaleResonance021001 nanoscience & nanotechnologyAtomic and Molecular Physics and Opticschemistry0210 nano-technologybusiness
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Optical properties and photosensitivity of vacuum synthesized Ge-doped sol-gel amorphous SiO/sub 2/

2005

We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in sol-gel Ge-doped amorphous SiO/sub 2/. The studied materials have Ge-doping levels up to 10/sup 4/ molar part per million and were densified by two routes differing for the atmosphere: O/sub 2/+N/sub 2/ or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.

optical fiberMaterials sciencePhotoluminescenceradiation effectDopingtechnology industry and agricultureAnalytical chemistrychemistry.chemical_elementGermaniumAmorphous solidlaw.inventionParamagnetismNuclear magnetic resonancechemistrylawradiation-induced attenuationIrradiationElectron paramagnetic resonanceSol-gelProceedings of 2005 IEEE/LEOS Workshop on Fibres and Optical Passive Components, 2005.
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Photoluminescence time decay of surface oxygen deficient centers in un‐doped and Ge‐doped silica

2005

We report a study of the emission decay from the singlet excited state of two fold coordinated Si and Ge centers stabilized on the surface of silica and Ge-doped silica. The PL lifetimes are of the order of nanoseconds and increase on decreasing the temperature. The results suggest that, for the surface centers, the phonon assisted intersystem-crossing process linking the excited states affects the decay rates, is effective down to low temperatures and is distributed because of the inhomogeneity of the defects. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

optical fiberSurface oxygenPhotoluminescenceradiation effectChemistryPhononDopingTime decayAnalytical chemistryNanosecondExcited stateradiation-induced attenuationSinglet stateAtomic physicsphysica status solidi (c)
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Influence of specific codopants and post-treatments on Erbium Doped Fibers: Radiation behavior characteristics by CML

2010

optical fibererbium dopingirradiation effects
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