Search results for "Radiation effect"
showing 10 items of 111 documents
Effects of photodynamic processes and ultraviolet light on duck and hen egg-white lysozymes.
1973
— The photochemical yields for inactivation and amino acid destruction in hen and duck egg-white lysozyme are presented. Duck lysozyme II is devoid of histidine but it has two more tyrosine residues than does hen lysozyme. The data indicate that sensitized oxidation of the single histidine residue of hen lysozyme is of no significance for the inactivation of this lysozyme. The ultraviolet destruction of tryptophan and cystine residues appears to be equally related with the loss in enzymatic activity of hen lysozyme. In the case of duck lysozyme, however, the ultraviolet inactivation appears to be predominantly governed by the destruction of cystine residues.
Modifications in Evoked Activity in the Visual Cortex Induced by the Caudate Nucleus
1971
The visual system, like the other sensorial systems, is subjected to intrinsic, complex control, originating both in the retina (CHANG et al., 1959; ARDUINI and HIRAO, 1960; STERIADE, 1967) and in the visual cortex (BUSER et a/., 1963; JASSIK-GERSCHENFELD and ASCHER, 1963; MEULDERS, 1965), which regulates its input at various levels of the specific pathways. However, the visual system is also influenced by subcortical structures which, though not exerting on it a strictly selective control, determine notable modifications in the level of excitability of the cortical sensorial neurons. It is in fact we11 known that activation of the mesencephalic reticular formation, by increasing the level …
Meiosis in translocation heterozygotes in the mosquito Culex pipiens.
1971
Adult Culex pipiens males irradiated with both X-rays and neutrons were crossed to untreated females and F1-egg rafts were checked for dominant lethality. F1-progenies were outcrossed with normal individuals in order to obtain lines with inherited semisterility. From a total of 120 lines that showed a certain amount of sterility 12 lines were studied cytologically. 10 lines showed reciprocal chromosome exchanges.—At late pachytene and diplotene cross configurations with large asynaptic regions at the center of the cross are obligatory. Bivalents, chains of three, chains of four, and ring configurations are present at metaphase and anaphase I. The different frequencies of the occurrence of s…
Spectral properties and lifetime of green emission in γ-ray irradiated bismuth-doped silica photonic crystal fibers
2018
Abstract We report an experimental investigation focused on the green emission detected in γ-ray irradiated Bismuth-doped photonic crystal fibers. Our photoluminescence spectra, recorded at room temperature, provide evidence for the presence of two emission bands both located at ~ 530 nm (2.34 eV). One emission is detected only in the Bi-doped core while the other, is detected in the cladding. These two emissions feature different excitation spectra and a fast and a slow decay lifetime. The origin of the fast emission decay, about ten nanoseconds, is tentatively attributed to a silica intrinsic defect, whereas the slow component, having lifetime of about 2 μs and featuring anti-stokes emiss…
The role of impurities in the irradiation induced densification of amorphous SiO(2).
2011
In a recent work (Buscarino et al 2009 Phys. Rev. B 80 094202), by studying the properties of the (29)Si hyperfine structure of the E'(γ) point defect, we have proposed a model able to describe quantitatively the densification process taking place upon electron irradiation in amorphous SiO(2) (a-SiO(2)). In particular, we have shown that it proceeds heterogeneously, through the nucleation of confined densified regions statistically dispersed into the whole volume of the material. In the present experimental investigation, by using a similar approach on a wider set of materials, we explore how this process is influenced by impurities, such as OH and Cl, typically involved in relevant concent…
Positron lifetime measurements on neutron‐irradiated InP crystals
1996
Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals. navarrof@evalvx.ific.uv.es ; Jose.Ferrero@uv.es
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes
2016
Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Radiation-induced defects in antiferroelectric thin films
2003
Abstract Radiation effects on highly oriented antiferroelectric (AFE) PbZrO3 (PZ) films with a thickness of approximately 400 nm are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for fusion devices like ITER. The films were prepared by pulsed laser deposition (PLD). The dielectric constant was measured in the frequency range from 1 to 250 kHz in a stepwise cooling mode (∼2 °C min−1) from 400 °C to room temperature before and after irradiation to a fast neutron fluence of 2×1022 m−2 (E>0.1 MeV). After irradiation, the films were annealed in several steps up to ∼400 °C to remove the radiation-induced defects. The results are di…
Optical and photonic material hardness for energetic environments
2009
We studied the effects of dielectric change in the chemical composition and in the realization procedures under radiation exposure. We have compared the radiation effects on Ge-doped and F-doped fibers and preforms: the first play a crucial role in the photosensitivity property, the second improves the dielectric radiation hardness even at low concentrations. The use of different spectroscopic techniques (RIA, OA, EPR) allow the identification of the point defect formation mechanisms at the origin of the optical degradation properties.