Search results for "Radiation hardening"
showing 10 items of 39 documents
0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments
2021
Neutrons with energies between 0.1-10 MeV can significantly impact the Soft Error Rate (SER) in SRAMs manufactured in scaled technologies, with respect to high-energy neutrons. Their contribution is evaluated in accelerator, ground level and avionic (12 km of altitude) environments. Experimental cross sections were measured with monoenergetic neutrons from 144 keV to 17 MeV, and results benchmarked with Monte Carlo simulations. It was found that even 144 keV neutrons can induce upsets due to elastic scattering. Moreover, neutrons in the 0.1-10 MeV energy range can induce more than 60% of the overall upset rate in accelerator applications, while their contribution can exceed 18% in avionics.…
Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications
2021
Proton direct ionization from low-energy protons has been shown to have a potentially significant impact on the accuracy of prediction methods used to calculate the upset rates of memory devices in space applications for state-of-the-art deep sub-micron technologies. The general approach nowadays is to consider a safety margin to apply over the upset rate computed from high-energy proton and heavy ion experimental data. The data reported here present a challenge to this approach. Different upset rate prediction methods are used and compared in order to establish the impact of proton direct ionization on the total upset rate. No matter the method employed the findings suggest that proton dir…
Radiation-hard semiconductor detectors for SuperLHC
2005
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10^35 cm^(- 2) s(- 1) has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm 2. The CERN-RD50 project ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has been established in 2002 to explore…
Radiation hardening techniques for rare-earth-based optical fibers and amplifiers
2012
Er/Yb doped fibers and amplifiers have been shown to be very radiation sensitive, limiting their integration in space. We present an approach including successive hardening techniques to enhance their radiation tolerance. The efficiency of our approach is demonstrated by comparing the radiation responses of optical amplifiers made with same lengths of different rare-earth doped fibers and exposed to gamma-rays. Previous studies indicated that such amplifiers suffered significant degradation for doses exceeding 10 krad. Applying our techniques significantly enhances the amplifier radiation resistance, resulting in a very limited degradation up to 50 krad. Our optimization techniques concern …
A PCI Express optical link based on low-cost transceivers qualified for radiation hardness
2013
In this paper we want to demonstrate that an optical physical medium is compatible with the second generation of PCI Express. The benefit introduced by the optical decoupling of a PCI Express endpoint is twofold: it allows for a geographical detachment of the device and it remains compliant with the usual PCI accesses to the legacy I/O and memory spaces. We propose two boards that can bridge the PCI Express protocol over optical fiber. The first is a simple optical translator while the second is a more robust switch developed for connecting up to four devices to a single host. Such adapters are already working in the control and data acquisition system of a particle detector at CERN and hen…
Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
2020
Journal of Instrumentation 15(02), P02005 (2020). doi:10.1088/1748-0221/15/02/P02005
MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade
2018
Radiation hard silicon sensors are required for the upgrade of the ATLAS tracking detector for the High- Luminosity Large Hadron Collider (HL-LHC) at CERN. A process modification in a standard 0.18 μm CMOS imaging technology combines small, low-capacitance electrodes (∼2 fF for the sensor) with a fully depleted active sensor volume. This results in a radiation hardness promising to meet the requirements of the ATLAS ITk outer pixel layers (1.5 × 1015 neq /cm2 ), and allows to achieve a high signal-to-noise ratio and fast signal response, as required by the HL-LHC 25 ns bunch crossing structure. The radiation hardness of the charge collection to Non-Ionizing Energy Loss (NIEL) has been previ…
Recent results from the ATLAS SCT irradiation programme
2000
Abstract The irradiation facility at the CERN proton synchrotron, set up to irradiate full-size prototypes of silicon microstrip detectors for the ATLAS semiconductor tracker, is described and measurements of the detector currents during irradiation are reported. The detector dark currents can be described by bulk radiation damage models demonstrating the radiation hardness of the detector design and allowing the current damage factor α and the acceptor introduction term β to be determined. Results from testbeam studies of a module with an irradiated detector and binary readout in a magnetic field and with the beam incident over a range of angles are reported. The hit efficiency and spatial…
Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
2004
Abstract We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.
Particle detectors made of high-resistivity Czochralski silicon
2005
We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 O cm and 1.9 kO cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, g-rays, lithium ions and electrons. Cz-Si was found to be more…