Search results for "Random access"

showing 10 items of 30 documents

Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study

2021

International audience; This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under an atmospheric-like neutron spectrum at the ChipIr beamline in the Rutherford Appleton Laboratories, UK. The memories were tested with a reduced refresh rate to expose more single-event upsets and under similar conditions provided by a board specifically developed for this type of study in test facilities. The board has also been designed to be used as a nanosatellite payload in order to perform similar tests. The neutron-induced failures were studi…

NeutronsComputer sciencePayloadkäyttömuistitStuck Bitsneutronitmuistit (tietotekniikka)Technology impactSEERefresh rate[SPI.TRON]Engineering Sciences [physics]/ElectronicsRadiation EffectsBeamlinesäteilyfysiikkaNeutronNode (circuits)[INFO.INFO-ES]Computer Science [cs]/Embedded Systems[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsSDRAMNeutron irradiationSimulationRandom accessavaruustekniikka
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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

2018

International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

Nuclear and High Energy PhysicsComputer sciencekäyttömuistit02 engineering and technologysingle-event effect01 natural sciencesMemory arrayElectronic mailX-ray0103 physical sciencesElectronic engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsElectrical and Electronic Engineeringstatic testComputingMilieux_MISCELLANEOUSdynamic testEvent (probability theory)Random access memoryta114ta213010308 nuclear & particles physicsbusiness.industrySEFImuistit (tietotekniikka)021001 nanoscience & nanotechnologyFerroelectricityheavy ionsingle-event upsetNon-volatile memoryFRAMsäteilyfysiikkaNuclear Energy and EngineeringSingle event upsetPhotonics0210 nano-technologybusinessIEEE Transactions on Nuclear Science
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Methodologies for the Statistical Analysis of Memory Response to Radiation

2016

International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.

Nuclear and High Energy PhysicsEngineeringHardware_PERFORMANCEANDRELIABILITYRadiation[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesstatistical analysis0103 physical sciencesStatic testingElectronic engineeringmemory responseStatistical analysisSensitivity (control systems)Static random-access memoryElectrical and Electronic Engineeringstatic testCluster of bit-flipsdynamic test010302 applied physicsSingle event upset SEURandom access memoryta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)säteilySRAMReliability engineeringradiationNuclear Energy and EngineeringSingle event upsetradiation effectsbusiness[MATH.MATH-NA]Mathematics [math]/Numerical Analysis [math.NA]Dynamic testing
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Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

2021

This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. Electrons with energies between 6 and 200 MeV were used at RADiation Effects Facility (RADEF) in Jyvaskyla, Finland, and at Very energetic Electron facility for Space Planetary Exploration missions in harsh Radiative environments (VESPER) in The European Organization for Nuclear Research (CERN), Switzerland. Photon irradiation was also performed in Jyvaskyla. In these irradiation tests, stuck bits originating from electro…

Nuclear and High Energy Physics[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicskäyttömuistitHardware_PERFORMANCEANDRELIABILITYElectronRadiationelektronit01 natural sciencesJovianelektroniikkakomponentitElectron radiationJupiterelectron radiation0103 physical sciencesRadiative transfer[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsElectrical and Electronic EngineeringavaruustekniikkaPhysicsHardware_MEMORYSTRUCTURESLarge Hadron Collider010308 nuclear & particles physicsionisoiva säteilystuck bits[SPI.TRON] Engineering Sciences [physics]/Electronics[INFO.INFO-ES] Computer Science [cs]/Embedded Systemstotal ionizing dose[SPI.TRON]Engineering Sciences [physics]/ElectronicsComputational physicssäteilyfysiikkaNuclear Energy and Engineeringradiation effectssingle event upsets[INFO.INFO-ES]Computer Science [cs]/Embedded SystemsNode (circuits)Random accessIEEE Transactions on Nuclear Science
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Proton Direct Ionization Upsets at Tens of MeV

2023

Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies ($ 3 MeV and extending up to tens of MeV. The SEU cross Section from 20-MeV protons exceeds the 200-MeV proton SEU cross Section by almost a factor of 3. Similarly, monoenergetic neutron cross sections at 14 MeV are about a factor of 3 lower than the 20-MeV proton cross section. Because of Monte Carlo (MC) simulations, it was determined that this strong enhancement is due to the proton direct ionization process as opposed to the elastic and inelastic scattering processes that dominate the SEU res…

Nuclear and High Energy Physicsprotonitprotonsionitionisoiva säteilyscatteringneutronsenergiansiirtoMonte-Carlo simulationsneutronitmuistit (tietotekniikka)proton direct ionizationMonte Carlo -menetelmätNuclear Energy and Engineeringrandom access memorytrajectorydelta-raysNuclear Physics - Experimentsingle event upsetsElectrical and Electronic Engineeringliike-energia
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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

2020

International audience; The pion resonance in the nuclear reaction cross section is seen to have a direct impact on the single-event effect (SEE) cross section of modern electronic devices. This was experimentally observed for single-event upsets and single-event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation estab…

Nuclear reactionProtonNuclear Theoryresonance: effectSingle event upsets01 natural sciences7. Clean energyResonance (particle physics)nuclear reactionelektroniikkakomponentitradiation hardness assurance (RHA)Detectors and Experimental TechniquesNuclear Experimentradiation: damagePhysicsLarge Hadron Colliderprotonscross sectionMesonsneutronitRandom access memorySEELarge Hadron Colliderpionsn: fluxNuclear and High Energy PhysicsprotonitMesonaccelerator[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]RHAsoft error ratesoft error rate (SER)hiukkaskiihdyttimetNuclear physicsFLUKACross section (physics)hiukkasetPion0103 physical sciencesNeutron[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]Electrical and Electronic Engineeringpi: interactionsingle-event effect (SEE)Neutrons010308 nuclear & particles physicsneutronsAccelerators and Storage RingsParticle beamsNuclear Energy and EngineeringsäteilyfysiikkahadronIEEE Transactions on Nuclear Science
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Letter Throughput and Delay Analysis of the Ideal Window

1999

We consider the problem of random access communications over a time slotted channel with feedback of infinitely multiplicity at the beginning of each collision resolution interval (CRI), i.e., users know via instantaneous feedback the number of users involved in that collision. Once this is known, the resolution algorithm (CRA) operates with binary (successful / non successful, s/ns) feedback. The analysis of this simple full feedback sensing window random access algorithm, named ideal window stabilized ALOHA, (IWSA), algorithm, provides a throughput of 0.5052 packets/slot, Its delay is also analyzed and compared with similar algorithms.

Packet switchingAlohaNetwork packetComputer Science::Networking and Internet ArchitectureBinary numberCode rateElectrical and Electronic EngineeringCollisionAlgorithmTelecommunications networkRandom accessMathematicsEuropean Transactions on Telecommunications
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A Model for a Data Acquisition Solution for a Medium Size Accelerator Laboratory

2005

Pipeline transportRandom access memoryData acquisitionOptical controlComputer sciencebusiness.industryControl systemOptical performance monitoringOptical filterbusinessComputer hardwareSeventh Conference Real Time '91 on Computer Applications in Nuclear, Particle and Plasma Physics Conference Record
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Priority-based initial access for URLLC traffic in massive IoT networks: Schemes and performance analysis

2020

Abstract At a density of one million devices per square kilometer, the10’s of billions of devices, objects, and machines that form a massive Internet of things (mIoT) require ubiquitous connectivity. Among a massive number of IoT devices, a portion of them require ultra-reliable low latency communication (URLLC) provided via fifth generation (5G) networks, bringing many new challenges due to the stringent service requirements. Albeit a surge of research efforts on URLLC and mIoT, access mechanisms which include both URLLC and massive machine type communications (mMTC) have not yet been investigated in-depth. In this paper, we propose three novel schemes to facilitate priority-based initial …

Scheme (programming language)Service (systems architecture)Computer Networks and CommunicationsComputer sciencebusiness.industryReliability (computer networking)Frame (networking)020206 networking & telecommunications02 engineering and technologyTransmission (telecommunications)0202 electrical engineering electronic engineering information engineering020201 artificial intelligence & image processingLatency (engineering)businesscomputerVDP::Teknologi: 500::Informasjons- og kommunikasjonsteknologi: 5505GRandom accesscomputer.programming_languageComputer network
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Random access with repeated contentions for emerging wireless technologies

2017

In this paper we propose ReCo, a robust contention scheme for emerging wireless technologies, whose efficiency is not sensitive to the number of contending stations and to the settings of the contention parameters (such as the contention windows and retry limits). The idea is iterating a basic contention mechanism, devised to select a sub-set of stations among the contending ones, in consecutive elimination rounds, before performing a transmission attempt. Elimination rounds can be performed in the time or frequency domain, with different overheads, according to the physical capabilities of the nodes. Closed analytical formulas are given to dimension the number of contention rounds in order…

Settore ING-INF/03 - Telecomunicazionibusiness.industryOrthogonal frequency-division multiplexingComputer scienceComputer Science (all)020206 networking & telecommunications02 engineering and technologycomputer science (all); electrical and electronic engineering; binary alloys0202 electrical engineering electronic engineering information engineeringWireless020201 artificial intelligence & image processingElectrical and Electronic EngineeringbusinessRandom accessComputer networkIEEE INFOCOM 2017 - IEEE Conference on Computer Communications
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