Search results for "Resistivity"
showing 10 items of 385 documents
High-Temperature Hall Measurements on BaSnO3Ceramics
2005
Simultaneous Hall and conductivity measurements were performed in situ between 650° and 1050°C on n-type semiconducting BaSnO3ceramics. The variation of the Hall mobility and the Hall carrier density as a function of oxygen partial pressure between 102 and 105 Pa and of temperature was investigated. At temperatures below 900°C the conductivity exhibits a dependence on temperature and oxygen partial pressure which is mainly determined by variations of the Hall mobility. Above 900°C most of the significant dependence is due to a variation in carrier density. Furthermore, a simple defect model assuming doubly ionized oxygen vacancies and acceptor impurities is discussed for BaSnO3.
Tin-related double acceptors in gallium selenide single crystals
1998
Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…
High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide
1993
A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis…
Si Donor Incorporation in GaN Nanowires
2015
With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…
Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet
2008
Thin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially oxidized pTPD with a molecular magnetic cluster showed an increase in mobility of over two orders of magnitude. A transition in the mobility of pTPD upon doping could also be observed by the presence of a maximum obtained for a given oxidant ratio and subsequent decrease for a higher ratio. Such result agrees well with a previously reported model based on the combined effect of dipolar broadening of the density of states and transport manifold filling. Peer Reviewed
High-pressure electrical transport measurements on p-type GaSe and InSe
2006
We performed high-pressure Hall effect and resistivity measurements in p-type GaSe and InSe up to 12 GPa. The pressure behaviour of the transport parameters shows dramatic differences between both materials. In GaSe, the hole concentration and mobility increase moderately and continuously. In InSe, the hole mobility raises rapidly and the hole concentration increases abruptly near 0.8 GPa. The observed results are attributed to the different pressure evolution of the valence-band structure in each material. In InSe a carrier-type inversion is also detected near 4.5 GPa.
Ultra-fast direct growth of metallic micro- and nano-structures by focused ion beam irradiation
2019
An ultra-fast method to directly grow metallic micro- and nano-structures is introduced. It relies on a Focused Ion Beam (FIB) and a condensed layer of suitable precursor material formed on the substrate under cryogenic conditions. The technique implies cooling the substrate below the condensation temperature of the gaseous precursor material, subsequently irradiating with ions according to the wanted pattern, and posteriorly heating the substrate above the condensation temperature. Here, using W(CO)6 as the precursor material, a Ga+ FIB, and a substrate temperature of -100 °C, W-C metallic layers and nanowires with resolution down to 38 nm have been grown by Cryogenic Focused Ion Beam Indu…
Comparison of different sets of array configurations for multichannel 2D ERT acquisition
2017
Abstract Traditional electrode arrays such Wenner-Schlumberger or dipole-dipole are still widely used thanks to their well-known properties but the array configurations are generally not optimized for multi-channel resistivity measures. Synthetic datasets relating to four different arrays, dipole-dipole (DD), pole-dipole (PD), Wenner-Schlumberger (WS) and a modified version of multiple gradient (MG), have been made for a systematic comparison between 2D resistivity models and their inverted images. Different sets of array configurations generated from simple combinations of geometric parameters (potential dipole lengths and dipole separation factors) were tested with synthetic and field dat…
Electric conduction in solids: a pedagogical approach supported by laboratory measurements and computer modelling environments
2008
In this paper we present a pedagogic approach aimed at modeling electric conduction in semiconductors, built by using NetLogo, a programmable modeling environment for building and exploring multi‐agent systems. ‘Virtual experiments’ are implemented to confront predictions of different microscopic models with real measurements of electric properties of matter, such as resistivity. The relations between these electric properties and other physical variables, like temperature, are, then, analyzed.
Ground fault distribution on overhead transmission lines
2006
When a ground fault occurs on an overhead transmission line in a power network with grounded neutral, the fault current returns to the grounded neutral through the tower structures, ground return paths and ground wires. This paper presents an analytical method in order to evaluate the ground fault current distribution in an effectively grounded power network. The effect of soil resistivity, ground resistance of towers and power line configuration, on the magnitude of return currents, has been examined.