Search results for "S2"

showing 10 items of 200 documents

Prussian blue@MoS2 layer composites as highly efficient cathodes for sodium- and potassium-ion batteries

2018

Prussian blue (PB) represents a simple, economical, and eco‐friendly system as cathode material for sodium‐ion batteries (SIBs). However, structural problems usually worsen its experimental performance thus motivating the search for alternative synthetic strategies and the formation of composites that compensate these deficiencies. Herein, a straightforward approach for the preparation of PB/MoS2‐based nanocomposites is presented. MoS2 provides a 2D active support for the homogeneous nucleation of porous PB nanocrystals, which feature superior surface areas than those obtained by other methodologies, giving rise to a compact PB shell covering the full flake. The nanocomposite exhibits an ex…

Materials scienceMaterials compostosPrussian blue2D composites02 engineering and technologyPotassium-ion batteries010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences0104 chemical sciencesElectronic Optical and Magnetic MaterialsMarie curieBiomaterialsElectrochemistrymedia_common.cataloged_instanceQuímica FísicaEuropean union0210 nano-technologyMoS2 layersSodium-ion batteriesHumanitiesmedia_common
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Mid-infrared 2000-nm bandwidth supercontinuum generation in suspended-core microstructured Sulfide and Tellurite optical fibers

2012

International audience; In this work, we report the experimental observation of supercontinua generation in two kinds of suspended-core microstructured soft-glass optical fibers. Low loss, highly nonlinear, tellurite and As2S3 chalcogenide fibers have been fabricated and pumped close to their zero-dispersion wavelength in the femtosecond regime by means of an optical parametric oscillator pumped by a Ti:Sapphire laser. When coupled into the fibers, the femtosecond pulses result in 2000-nm bandwidth supercontinua reaching the Mid-Infrared region and extending from 750 nm to 2.8 mu m in tellurite fibers and 1 mu m to 3.2 mu m in chalcogenide fibers, respectively.

Materials scienceOptical fiberLightChalcogenidePUMPMU-MFABRICATIONPhysics::Optics02 engineering and technologySulfidesPHOTONIC CRYSTAL FIBERS01 natural sciencesNMlaw.invention010309 opticschemistry.chemical_compoundOpticsDISPERSIONlaw0103 physical sciencesOptical Fibersbusiness.industryLasersOHAS2S3 GLASSEquipment Design021001 nanoscience & nanotechnologyLaserAtomic and Molecular Physics and OpticsSupercontinuumCONTINUUM GENERATIONCHALCOGENIDEchemistryNonlinear DynamicsFemtosecondOptical parametric oscillatorSapphireTellurium0210 nano-technologybusinessPhotonic-crystal fiber
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WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits

2020

International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…

Materials scienceTungsten disulfideWS202 engineering and technology010402 general chemistry01 natural sciencesPulsed laser depositionchemistry.chemical_compoundMonolayerDeposition (phase transition)General Materials ScienceElectronics2D semiconductorsElectronic circuitspintronicsSpintronicsbusiness.industryNanotecnologia021001 nanoscience & nanotechnologypulsed-laser deposition[SPI.TRON]Engineering Sciences [physics]/Electronics0104 chemical sciencesEspectroscòpia RamanSemiconductorchemistrySemiconductorsRaman spectroscopy[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]OptoelectronicsX-ray photoemission spectroscopy0210 nano-technologybusiness
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Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization

2017

One of the main challenges to exploit molybdenum disulfide (MoS2) potentialities for the next-generation complementary metal oxide semiconductor (CMOS) technology is the realization of p-type or ambipolar field-effect transistors (FETs). Hole transport in MoS2 FETs is typically hampered by the high Schottky barrier height (SBH) for holes at source/drain contacts, due to the Fermi level pinning close to the conduction band. In this work, we show that the SBH of multilayer MoS2 surface can be tailored at nanoscale using soft O-2 plasma treatments. The morphological, chemical, and electrical modifications of MoS2 surface under different plasma conditions were investigated by several microscopi…

Materials scienceambipolar transistorsSchottky barrierDFT calculationNanotechnology02 engineering and technologyDFT calculations01 natural scienceschemistry.chemical_compoundX-ray photoelectron spectroscopy0103 physical sciencesScanning transmission electron microscopyGeneral Materials ScienceSchottky barrierMolybdenum disulfide010302 applied physicsAmbipolar diffusionElectron energy loss spectroscopyConductive atomic force microscopy021001 nanoscience & nanotechnologyconductive atomic force microscopyatomic resolution STEMchemistryambipolar transistorSurface modificationMaterials Science (all)0210 nano-technologyMoS2
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Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

2017

Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…

Materials sciencecontact resistanceSchottky barrier2General Physics and AstronomyField effectContext (language use)02 engineering and technologyMoSlcsh:Chemical technologylcsh:Technology01 natural scienceslaw.inventionPhysics and Astronomy (all)law0103 physical scienceslcsh:TP1-1185General Materials ScienceElectrical and Electronic Engineeringtemperature dependencelcsh:Sciencethreshold voltage010302 applied physicslcsh:TSubthreshold conductionbusiness.industrySettore FIS/01 - Fisica SperimentaleTransistorContact resistance021001 nanoscience & nanotechnologymobilitylcsh:QC1-999Threshold voltageOptoelectronicslcsh:QField-effect transistorMaterials Science (all)MoS20210 nano-technologybusinesslcsh:PhysicsBeilstein Journal of Nanotechnology
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Real structures on nilpotent orbit closures

2021

We determine the equivariant real structures on nilpotent orbits and the normalizations of their closures for the adjoint action of a complex semisimple algebraic group on its Lie algebra.

Mathematics - Algebraic Geometryreal form14R20 14M17 14P99 11S25 20G20homogeneous spaceMathematics::Rings and Algebrasreal structureGalois cohomology[MATH.MATH-AG] Mathematics [math]/Algebraic Geometry [math.AG]FOS: MathematicsNilpotent orbitMathematics::Representation TheoryAlgebraic Geometry (math.AG)
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Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC

2022

In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H-SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1019 cm−3). After assessing the excellent thickness uniformity (≈3L-MoS2) and conformal coverage of the PLD-grown films by Raman mapping and transmission electron microscopy, the current injection across the heterojunctions is investigated by temperature-dependent current–voltage characterization of the diodes and by nanoscale current mapping with conductive atomic force microscopy. A wide tunability of the transport properties is shown by the SiC surface dopi…

Mechanics of Materialssilicon carbideMechanical Engineeringheterojunction diodesSettore FIS/01 - Fisica Sperimentaleconductive atomic force microscopyMoS2pulsed laser deposition
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Nuclear rDNA-based molecular clock of the evolution of Triatominae (Hemiptera : Reduviidae), vectors of Chagas disease

2000

The evolutionary history and times of divergence of triatomine bug lineages are estimated from molecular clocks inferred from nucleotide sequences of the small subunit SSU (18S) and the second internal transcribed spacer (ITS-2) of the nuclear ribosomal DNA of these reduviids. The 18S rDNA molecular clock rate in Triatominae, and Prosorrhynchan Hemiptera in general, appears to be of 1.8% per 100 million years (my). The ITS-2 molecular clock rate in Triatominae is estimated to be around 0.4-1% per 1 my, indicating that ITS-2 evolves 23-55 times faster than 18S rDNA. Inferred chronological data about the evolution of Triatominae fit well with current hypotheses on their evolutionary histories…

Microbiology (medical)Chagas diseaseChagas diseaselcsh:Arctic medicine. Tropical medicinelcsh:RC955-962lcsh:QR1-502ZoologyTAXONOMIEDNA RibosomalPolymerase Chain Reactionnuclear rDNAlcsh:Microbiology18S geneEvolution MolecularBiological ClocksevolutionRNA Ribosomal 18SmedicineETUDE COMPARATIVEAnimalsINSECTE NUISIBLECell LineagePHYLOGENIEInternal transcribed spacerMolecular clockRibosomal DNATriatominaeHEURE MOLECULAIRETriatominae vectorsGENE 18SBase SequencebiologyVECTEURITS2 SPACER.INTERNAL TRANSCRIBED SPACERmolecular clockSequence Analysis DNAbiology.organism_classificationmedicine.diseaseHemipteraEVOLUTIONInsect VectorsReduviidaeMALADIE DE CHAGASTaxonomy (biology)TriatominaeITS-2 spacerANALYSE GENETIQUE
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The NS3/4A proteinase of the hepatitis C virus: unravelling structure and function of an unusual enzyme and a prime target for antiviral therapy

1999

The hepatitis C virus (HCV) is a major causative agent of transfusion-acquired and sporadic non-A, non-B hepatitis worldwide. Infections most often persist and lead, in approximately 50% of all patients, to chronic liver disease. As is characteristic for a member of the family Flaviviridae, HCV has a plus-strand RNA genome encoding a polyprotein, which is cleaved co- and post-translationally into at least 10 different products. These cleavages are mediated, among others, by a virally encoded chymotrypsin-like serine proteinase located in the N-terminal domain of non-structural protein 3 (NS3). Activity of this enzyme requires NS4A, a 54-residue polyprotein cleavage product, to form a stable…

Models MolecularProtein ConformationvirusesHepatitis C virusMolecular Sequence DataHepacivirusViral Nonstructural ProteinsBiologymedicine.disease_causeAntiviral AgentsSerineProtein structureVirologymedicineProtease InhibitorsAmino Acid SequenceHepatitischemistry.chemical_classificationNS3HepatologySerine EndopeptidasesRNAmedicine.diseaseVirologyNS2-3 proteaseInfectious DiseasesEnzymechemistryRNA HelicasesJournal of Viral Hepatitis
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Redundant Picard–Fuchs System for Abelian Integrals

2001

We derive an explicit system of Picard-Fuchs differential equations satisfied by Abelian integrals of monomial forms and majorize its coefficients. A peculiar feature of this construction is that the system admitting such explicit majorants, appears only in dimension approximately two times greater than the standard Picard-Fuchs system. The result is used to obtain a partial solution to the tangential Hilbert 16th problem. We establish upper bounds for the number of zeros of arbitrary Abelian integrals on a positive distance from the critical locus. Under the additional assumption that the critical values of the Hamiltonian are distant from each other (after a proper normalization), we were…

MonomialPure mathematicsDynamical systems theoryDifferential equationDynamical Systems (math.DS)symbols.namesakeFOS: MathematicsMathematics - Dynamical SystemsAbelian groupComplex Variables (math.CV)Complex quadratic polynomialMathematicsDiscrete mathematicsMathematics - Complex Variables14D0514K20Applied Mathematics32S4034C0834C07symbolsEquivariant mapLocus (mathematics)Hamiltonian (quantum mechanics)32S2034C07; 34C08; 32S40; 14D05; 14K20; 32S20AnalysisJournal of Differential Equations
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