Search results for "SAP"
showing 10 items of 1142 documents
Faceting and structural anisotropy of nanopatterned CdO(110) layers
2005
CdO(110) layers with a self-organized surface structure have been grown on (10math0) sapphire (m plane) substrates by metal-organic vapor phase epitaxy. The epitaxial relationships between layer and substrate have been determined and a crystallographic model that accounts for the CdO in-plane orientation, which results in a reduced lattice mismatch when the CdO[001] direction is perpendicular to the sapphire c axis, has been proposed. Although the measured lattice parameters indicate that the layers are almost fully relaxed, an anisotropic mosaicity is detected with symmetrical rocking curves attaining minimum values when measured along the CdO[math10] direction. The layer morphology consis…
Continuously tunable diamond Raman laser for resonance ionization experiments at CERN
2019
We demonstrate a highly efficient, continuously tunable, diamond Raman laser operating in the blue region of the spectrum. The linewidth and tunability characteristics of a frequency-doubled Ti:Sapphire laser were transferred directly to the Stokes output, offering great potential for spectroscopic applications using an all-solid-state platform.
Magnetotransport properties of epitaxial - and -oriented CeSb thin films
2000
Abstract We present the electronic magnetotransport properties of (1 0 0) - and (1 1 1) -oriented CeSb thin films. The samples were grown epitaxially by molecular beam epitaxy onto sapphire (1 1 2 0) and (0 0 0 1) substrates. The temperature-dependent resistivity is in full correspondence with the behaviour known from bulk material. For (1 0 0) -oriented films the analysis of the temperature and magnetic field-dependent magnetoresistivity results in a H/T phase diagram analogous to that of bulk samples. For (1 1 1) -oriented films slight deviations were observed. In Hall-effect measurements of (1 0 0) -oriented samples a sign change of the Hall coefficient occurred which is in contrast to m…
Epitaxial films of the magnetic shape memory material
2007
Abstract By DC-sputtering from a stoichiometric target onto sapphire substrates we prepared epitaxial films of Ni 2 MnGa . X-ray diffraction in two circle geometry shows only the Ni 2 MnGa peaks corresponding to a (1 1 0) oriented growth on the (1 1 0) oriented sapphire substrate. Rocking curve scans shows that the out of plane orientation has a width of only 1 . 1 ∘ . By four circle X-ray diffraction we find an in-plane aligned growth. The Curie temperature as determined by SQUID magnetometry is 368 K. On cooling down the low field magnetization drops at around 260–280 K indicating the austenite to martensite transition. The presence of two different phases at high and low temperature also…
Crystal growth of ZnO micro and nanostructures by PVT on c-sapphire and amorphous quartz substrates
2010
Abstract ZnO micro and nanostructures in the form of tripods, grains, arrows and wires have been grown at temperatures as low as 500–300 ∘ C by a vapour transport method without catalysis and using a well selected value of the carrier gas flow. A transition state between grains and nanowires is reported being characterized by arrow-like structures which are constituted by a pyramidal head and a tail that is growing from the basal plane of the head. In order to understand the effect of growth conditions on the morphology of micro and nanostructures, an analysis of temperature and species concentration conditions has been carried out. In addition two different kinds of substrates have been u…
Growth of Fe nanostructures
2004
Abstract Highly ordered arrays of epitaxial iron thin film nanostructures were grown by molecular beam epitaxy techniques on m-plane sapphire α-Al2O3 (1 0 1 0) substrates. Iron was deposited by electron beam evaporation under shallow incidence onto faceted sapphire substrates held at elevated temperatures of 450°C. Scanning electron microscopy suggests the formation of morphologically and electrically isolated nanowire structures on the ridges of the facets. The topology of the structures depends strongly on the iron deposition angle.
Mid-infrared 2000-nm bandwidth supercontinuum generation in suspended-core microstructured Sulfide and Tellurite optical fibers
2012
International audience; In this work, we report the experimental observation of supercontinua generation in two kinds of suspended-core microstructured soft-glass optical fibers. Low loss, highly nonlinear, tellurite and As2S3 chalcogenide fibers have been fabricated and pumped close to their zero-dispersion wavelength in the femtosecond regime by means of an optical parametric oscillator pumped by a Ti:Sapphire laser. When coupled into the fibers, the femtosecond pulses result in 2000-nm bandwidth supercontinua reaching the Mid-Infrared region and extending from 750 nm to 2.8 mu m in tellurite fibers and 1 mu m to 3.2 mu m in chalcogenide fibers, respectively.
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
2008
http://link.aip.org/link/?JAPIAU/103/056108/1
Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition
2013
We report on ZnO epitaxial growth by pulsed-laser deposition (PLD) on different substrates, such as quartz, sapphire, and GaN template. Approximately 1 mu m-thick films were grown under different substrate temperatures and background oxygen conditions. X-ray diffraction analysis indicated preferential growth along the c-axis direction with a full-width at half maximum(FWHM) of the rocking curve as narrow as 230 arcs in the case of the GaN template. Low-temperature photoluminescence showed A-excitonic emission near 3.36 eV and a FWHM of (DXA)-X-0 emission as small as 2.89 meV at 9 K. Atomic force microscope measurements showed that roughness as low as 18 nm could be obtained. These results p…
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
2003
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…