Search results for "SAPPHIRE"
showing 10 items of 114 documents
Thermal conductivity of thermoelectric Al-substituted ZnO thin films
2013
ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross-plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in-plane power factor and the cross-plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in-plane than cross-plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinh…
In vitro bond strengths post thermal and fatigue load cycling of sapphire brackets bonded with self-etch primer and evaluation of enamel damage
2020
Background This in vitro study compares a self-etch primer (SEP) to an etch-and-rinse (EaR) for bonding sapphire brackets by evaluation of the enamel etch-pattern, shear bond strength, amount of remnant adhesive and enamel surface damage following thermal and fatigue cyclic loading. Material and Methods Ceramic (sapphire) brackets were bonded to 80 extracted human premolars using two enamel etching protocols: conventional EaR using 37% phosphoric acid (PA) gel (control), and a SEP (Transbond Plus). Each group was subdivided into two subgroups (n=20 teeth) according to the time of bracket debonding: after 24 h water storage or following 5000 thermo-cycles plus 5000 cycles fatigue loading, to…
Faceting and structural anisotropy of nanopatterned CdO(110) layers
2005
CdO(110) layers with a self-organized surface structure have been grown on (10math0) sapphire (m plane) substrates by metal-organic vapor phase epitaxy. The epitaxial relationships between layer and substrate have been determined and a crystallographic model that accounts for the CdO in-plane orientation, which results in a reduced lattice mismatch when the CdO[001] direction is perpendicular to the sapphire c axis, has been proposed. Although the measured lattice parameters indicate that the layers are almost fully relaxed, an anisotropic mosaicity is detected with symmetrical rocking curves attaining minimum values when measured along the CdO[math10] direction. The layer morphology consis…
Continuously tunable diamond Raman laser for resonance ionization experiments at CERN
2019
We demonstrate a highly efficient, continuously tunable, diamond Raman laser operating in the blue region of the spectrum. The linewidth and tunability characteristics of a frequency-doubled Ti:Sapphire laser were transferred directly to the Stokes output, offering great potential for spectroscopic applications using an all-solid-state platform.
Magnetotransport properties of epitaxial - and -oriented CeSb thin films
2000
Abstract We present the electronic magnetotransport properties of (1 0 0) - and (1 1 1) -oriented CeSb thin films. The samples were grown epitaxially by molecular beam epitaxy onto sapphire (1 1 2 0) and (0 0 0 1) substrates. The temperature-dependent resistivity is in full correspondence with the behaviour known from bulk material. For (1 0 0) -oriented films the analysis of the temperature and magnetic field-dependent magnetoresistivity results in a H/T phase diagram analogous to that of bulk samples. For (1 1 1) -oriented films slight deviations were observed. In Hall-effect measurements of (1 0 0) -oriented samples a sign change of the Hall coefficient occurred which is in contrast to m…
Epitaxial films of the magnetic shape memory material
2007
Abstract By DC-sputtering from a stoichiometric target onto sapphire substrates we prepared epitaxial films of Ni 2 MnGa . X-ray diffraction in two circle geometry shows only the Ni 2 MnGa peaks corresponding to a (1 1 0) oriented growth on the (1 1 0) oriented sapphire substrate. Rocking curve scans shows that the out of plane orientation has a width of only 1 . 1 ∘ . By four circle X-ray diffraction we find an in-plane aligned growth. The Curie temperature as determined by SQUID magnetometry is 368 K. On cooling down the low field magnetization drops at around 260–280 K indicating the austenite to martensite transition. The presence of two different phases at high and low temperature also…
Crystal growth of ZnO micro and nanostructures by PVT on c-sapphire and amorphous quartz substrates
2010
Abstract ZnO micro and nanostructures in the form of tripods, grains, arrows and wires have been grown at temperatures as low as 500–300 ∘ C by a vapour transport method without catalysis and using a well selected value of the carrier gas flow. A transition state between grains and nanowires is reported being characterized by arrow-like structures which are constituted by a pyramidal head and a tail that is growing from the basal plane of the head. In order to understand the effect of growth conditions on the morphology of micro and nanostructures, an analysis of temperature and species concentration conditions has been carried out. In addition two different kinds of substrates have been u…
Growth of Fe nanostructures
2004
Abstract Highly ordered arrays of epitaxial iron thin film nanostructures were grown by molecular beam epitaxy techniques on m-plane sapphire α-Al2O3 (1 0 1 0) substrates. Iron was deposited by electron beam evaporation under shallow incidence onto faceted sapphire substrates held at elevated temperatures of 450°C. Scanning electron microscopy suggests the formation of morphologically and electrically isolated nanowire structures on the ridges of the facets. The topology of the structures depends strongly on the iron deposition angle.
Mid-infrared 2000-nm bandwidth supercontinuum generation in suspended-core microstructured Sulfide and Tellurite optical fibers
2012
International audience; In this work, we report the experimental observation of supercontinua generation in two kinds of suspended-core microstructured soft-glass optical fibers. Low loss, highly nonlinear, tellurite and As2S3 chalcogenide fibers have been fabricated and pumped close to their zero-dispersion wavelength in the femtosecond regime by means of an optical parametric oscillator pumped by a Ti:Sapphire laser. When coupled into the fibers, the femtosecond pulses result in 2000-nm bandwidth supercontinua reaching the Mid-Infrared region and extending from 750 nm to 2.8 mu m in tellurite fibers and 1 mu m to 3.2 mu m in chalcogenide fibers, respectively.
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
2008
http://link.aip.org/link/?JAPIAU/103/056108/1