Search results for "SED"

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

2009

Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: effect of thermal annealing

2013

International audience; ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.

Thermal oxidation of the intermetallic phases Al 8 Mo 3 and AlMo 3

2017

Abstract The thermal oxidation reactions of the intermetallic phases Al8Mo3 and AlMo3 were investigated and analyzed by ex-situ powder-x-ray diffraction (XRD), difference thermal analysis (DTA), thermogravimetry (TGA), and infrared spectroscopy (IR). The initial oxidation reactions in air were found to yield Al2O3 and AlMo3 in the case of Al8Mo3 (Tonset =725 °C), and MoO3 as well as Al8−xMo3 (Tonset =435 °C) for the pure intermetallic phase AlMo3, respectively. Thus, both intermetallic phases are coexisting in an equilibrium within a temperature range of 300 °C under oxidizing conditions. The formation of β-Al2(MoO4)3 followed the second oxidizing process of the respective minority componen…

Controlled thermal oxidation of nanostructured vanadium thin films

2016

Abstract Pure V thin films were dc sputtered with different pressures (0.4 and 0.6 Pa) and particle incident angles α of 0°, 20° and 85°, by using the GLancing Angle Deposition (GLAD) technique. The sputtered films were characterized regarding their electrical resistivity behaviour in atmospheric pressure and in-vacuum conditions as a function of temperature (40–550 °C), in order to control the oxidation process. Aiming at comprehending the oxidation behaviour of the samples, extensive morphological and structural studies were performed on the as-deposited and annealed samples. Main results show that, in opposition to annealing in air, the columnar nanostructures are preserved in vacuum con…

Tetrahedral versus octahedral Mn site coordination in wurtzite and rocksalt Zn1−xMnxO investigated by means of XAS experiments under high pressure

2007

Abstract We present the results of x-ray absorption measurements carried out in Zn 1− x Mn x O thin films under high pressure. The Mn environment remains essentially the same for nominal Mn concentrations given by x = 0.05 , 0.1, 0.15 and 0.25. Both the XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine Structure) indicate that Mn occupies the Zn site, being surrounded by four oxygen atoms at 2.02±0.01 A. The substitutional hypothesis is reinforced by comparing the differences between the ambient (wurtzite) and high pressure (rocksalt) spectra, which correspond to tetrahedral and octahedral Mn environments.

Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe

2011

Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…

Composition dependence ofSi1−xGexsputter yield

2005

Sputtering yields have been measured for unstrained ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ $(x=0--1)$ alloys when bombarded with ${\mathrm{Ar}}^{+}$ ions within the linear cascade regime. Nonlinear S-shape dependence of the sputter yield as a function of the alloy composition has been revealed. The dependence is analyzed within the frameworks of the cascade theory conventionally accepted to be the most systematic to date theoretical approach in sputtering. In view of a linear composition dependence predicted for the sputter yield by the cascade theory adapted for polyatomic substrates, the nonlinearity observed in our experiments is shown to be related to the alloying effect on…

Atomic layer deposition of aluminum oxide on modified steel substrates

2016

Abstract Al 2 O 3 thin films were grown by atomic layer deposition to thicknesses ranging from 10 to 90 nm on flexible steel substrates at 300 °C using Al(CH 3 ) 3 and H 2 O as precursors. The films grown to thicknesses 9–90 nm covered the rough steel surfaces uniformly, allowing reliable evaluation of their dielectric permittivity and electrical current densities with appreciable contact yield. Mechanical behavior of the coatings was evaluated by nanoindentation. The maximum hardness values of the Al 2 O 3 films on steel reached 12 GPa and the elastic modulus exceeded 280 GPa.

The role of radio frequency scattering in high-energy electron losses from minimum-B ECR ion source

2021

Abstract The measurement of the axially lost electron energy distribution escaping from a minimum-B electron cyclotron resonance ion source in the range of 4–800 keV is reported. The experiments have revealed the existence of a hump at 150–300 keV energy, containing up to 15% of the lost electrons and carrying up to 30% of the measured energy losses. The mean energy of the hump is independent of the microwave power, frequency and neutral gas pressure but increases with the magnetic field strength, most importantly with the value of the minimum-B field. Experiments in pulsed operation mode have indicated the presence of the hump only when microwave power is applied, confirming that the origi…

Very Long Term Stabilization of a 2D Magnet down to the Monolayer for Device Integration

2020

2D materials have recently demonstrated a strong potential for spintronic applications. This has been further reinforced by the discovery of ferromagnetic 2D layers. Nevertheless, the fragility of ...