Search results for "SII"
showing 10 items of 3468 documents
Structural stability of DNA origami nanostructures under application-specific conditions
2018
With the introduction of the DNA origami technique, it became possible to rapidly synthesize almost arbitrarily shaped molecular nanostructures at nearly stoichiometric yields. The technique furthermore provides absolute addressability in the sub-nm range, rendering DNA origami nanostructures highly attractive substrates for the controlled arrangement of functional species such as proteins, dyes, and nanoparticles. Consequently, DNAorigami nanostructures have found applications in numerous areas of fundamental and applied research, ranging from drug delivery to biosensing to plasmonics to inorganic materials synthesis. Since many of those applications rely on structurally intact, well-defin…
SERS activity of photoreduced silver chloride crystals
2019
Metal nanoparticles are widely acclaimed as plasmonic substrates for surface -enhanced Raman spectroscopy (SERS) due to their unique particle plasmon resonances at visible and near infrared regions. Silver nanoparticles are typically employed in SERS when the targeted Raman signature zone of analytes lies at ultra-violet and/or blue to green spectral regimes. Even though silver has strong plasmonic properties, silver-based substrates are often affected by the atmospheric oxidation and show degradation in their SERS performance. One way to overcome this limitation is to use silver chloride crystals as oxidation resistant intermediate and photoreduce them to 'fresh' silver just before SERS an…
Improved stability of black silicon detectors using aluminum oxide surface passivation
2021
Publisher Copyright: © 2021 ESA and CNES We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 °C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. In our case, the induced junction is formed using n-type silicon and atomic-layer deposited aluminum oxide (Al2O3), which contains a large negative fixed charge. We compare the results with corresponding planar pn-junction detectors passivated with either with silicon dioxide (SiO2) or Al2O3. The results show that the induced junction detectors remain stable as their responsivity remains nearly unaffected during the electron beam…
High-Pressure Softening of the Out-of-Plane A2u(Transverse-Optic) Mode of Hexagonal Boron Nitride Induced by Dynamical Buckling
2019
We investigate the highly anisotropic behavior of the in-plane and out-of-plane infrared-active phonons of hexagonal boron nitride by means of infrared reflectivity and absorption measurements under high pressure. Infrared reflectivity spectra at normal incidence on high-quality single crystals show strict fulfillment of selection rules and an unusually long E1u[transverse-optic (TO)] phonon lifetime. Accurate values of the dielectric constants at ambient pressure ϵ0= 6.96, ϵ∞= 4.95, ϵ 0= 3.37, and ϵ∞ = 2.84 have been determined from fits to the reflectivity spectra. The out-of-plane A2u phonon reflectivity band is revealed in measurements on an inclined facet, and absorption measurements a…
Surface plasmon effects on carbon nanotube field effect transistors
2011
Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range. peerReviewed
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
2022
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…
Radioactive ion beam manipulation at the IGISOL-4 facility
2020
The IGISOL-4 facility in the JYFL Accelerator Laboratory of the University of Jyvaskyla (JYFL-ACCLAB) produces low-energy radioactive ion beams, primarily for nuclear spectroscopy, utilizing an ion guide-based, ISOL-type mass separator. Recently, new ion manipulation techniques have been introduced at the IGISOL-4 including the application of the PI-ICR (Phase-Imaging Ion Cyclotron Resonance) technique at the JYFLTRAP Penning trap, as well as commissioning of a Multi-Reflection Time-Of-Flight (MR-TOF) separator/spectrometer. The successful operation of the MR-TOF also required significant improvement of the Radio-Frequency Quadrupole (RFQ) cooler and buncher device beam pulse time structure…
Development of two-color resonance ionization scheme for Th using an automated wide-range tunable Ti:sapphire laser system
2018
Two-color resonance ionization schemes of Th were investigated by an automated wide-range tunable, grating-assisted Ti:Sa laser system with intracavity SHG option. A two-color ionization scheme via autoionizing state (1st step: 372.049 nm and 2nd step: 401.031 nm) was developed and its relative efficiency was lower by factor of three compared to a known three color scheme. peerReviewed
Simulation of the relative atomic populations of elements 1 ≤ Z ≤89 following charge exchange tested with collinear resonance ionization spectroscopy…
2019
© 2019 The Authors Calculations of the neutralisation cross-section and relative population of atomic states were performed for ions beams (1 ≤ Z ≤ 89) at 5 and 40 keV incident on free sodium and potassium atoms. To test the validity of the calculations, the population distribution of indium ions incident on a vapour of sodium was measured at an intermediate energy of 20 keV. The relative populations of the 5s 2 5p 2 P 1/2 and 5s 2 5p 2 P 3/2 states in indium were measured using collinear resonance ionization spectroscopy and found to be consistent with the calculations. Charge exchange contributions to high-resolution lineshapes were also investigated and found to be reproduced by the calc…
Rippling of two-dimensional materials by line defects
2020
Two-dimensional materials and their mechanical properties are known to be profoundly affected by rippling deformations. However, although ripples are fairly well understood, less is known about their origin and controlled modification. Here, motivated by recent reports of laser-controlled creation of line defects in graphene, we investigate how line defects could be used to control rippling in graphene and other two-dimensional materials. By sequential multi-scale coupling of density-functional tight-binding and continuum elasticity simulations, we quantify the amount of rippling when the number and the cumulative length of the line defects increase. Simulations show that elastic sheets wit…