Search results for "SILICON"

showing 10 items of 1391 documents

Dynamics of Structure Formation in Model Membranes and in Adsorbed Layers

1991

Unconventional and new ways to prepare ultrathin films with defined lateral distribution of components are described. These methods make use of two different principles: (1) Films with two coexisting phases are prepared and an active component preferentially partitions into one of the phases. Domain formation and interdomain distance largely depend on the kinetics of nucleation and growth and can thus be controlled. This is demonstrated by fluorescence microscopy with monolayers on water surfaces as well as with monolayers formed by co-adsorption of a fatty acid and a dye on silicon. (2) The support is structured by conventional techniques, in our case by photolithography. Adsorption or des…

Materials sciencePolymers and PlasticsSiliconKineticsNucleationchemistry.chemical_elementCrystallographyMembraneAdsorptionchemistryChemical engineeringDesorptionMicroscopyMonolayerMaterials ChemistryPolymer Journal
researchProduct

Accelerated laboratory weathering of polypropylene composites filled with synthetic silicon-based compounds

2019

Abstract Non-functionalized and n-alkyl functionalized polyhedral oligomeric silsesquioxanes (POSS), siloxane-silsesquioxane resins and the sol-gel silicas were for the first time examined as possible UV-stabilizers and/or antioxidants in polypropylene (PP). The obtained composites were subjected to the accelerated laboratory weathering tests. The influence of the weathering conditions on the structure and properties of the PP materials was evaluated on the basis of the results from Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and differential scanning calorimetry (DSC) studies. It was found that weathering resistance of the PP materials was strongly de…

Materials sciencePolymers and PlasticsSiliconScanning electron microscopepolyhedral oligomeric silsesquioxanesiloxane-silsesquioxane resinchemistry.chemical_element02 engineering and technology010402 general chemistry01 natural scienceslaw.inventionchemistry.chemical_compoundDifferential scanning calorimetrylawMaterials ChemistryCrystallizationFourier transform infrared spectroscopyPolypropylenechemistry.chemical_classificationPolymer021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical scienceschemistryChemical engineeringMechanics of Materialsaccelerated laboratory weatheringsilica0210 nano-technologyDispersion (chemistry)polypropylenePolymer Degradation and Stability
researchProduct

The Unique Versatility of the Double Metal Cyanide (DMC) Catalyst: Introducing Siloxane Segments to Polypropylene Oxide by Ring-Opening Copolymerizat…

2020

The combination of hydrophobic polydimethylsiloxane (PDMS) blocks with hydrophilic polyether segments plays a key role for silicone surfactants. Capitalizing on the double metal cyanide (DMC) catalyst, the direct (i.e., statistical) copolymerization of cyclic siloxanes and epoxides is shown to be feasible. The solvent-free one-pot copolymerization of hexamethylcyclotrisiloxane and propylene oxide results in the formation of gradient propylene oxide (PPO)-PDMS copolymers. Copolymers with up to 46% siloxane content with low dispersities (Ð < 1.2) are obtained in the molecular weight range of 2100-2900 g mol-1 . The polymerization kinetics are investigated by pressure monitoring and in situ 1 …

Materials sciencePolymers and PlasticsSiloxanesOxide02 engineering and technology010402 general chemistryPolypropylenes01 natural sciencesRing-opening polymerizationPolymerizationContact anglechemistry.chemical_compoundSiliconeMaterials ChemistryCopolymerPropylene oxideCyanidesPolydimethylsiloxaneOrganic ChemistryOxides021001 nanoscience & nanotechnology0104 chemical scienceschemistryChemical engineeringSiloxane0210 nano-technologyMacromolecular rapid communications
researchProduct

Coating fragmentation by branching cracks at large biaxial strain

2007

The fragmentation behaviour of a thin brittle coating attached to a ductile substrate subjected to equibiaxial quasi-static in-plane tension is studied. The experimentally observed cracking patterns are related to repetitively branching coating cracks. The fragmentation process is modelled by the rate equation approach. It is established that fragmentation by branching cracks leads to a qualitatively different fragment distribution compared to binary fragmentation. The fragmentation model is applied to identify crack branching and coating/substrate stress transfer parameters.

Materials sciencePolymersAerospace EngineeringOcean Engineeringengineering.materialBranching (polymer chemistry)BrittlenessCoatingFragmentation (mass spectrometry)FragmentationCoatingsmental disordersmedicineComposite materialCivil and Structural Engineeringchemistry.chemical_classificationSilicon oxideFissureMechanical EngineeringStatistical and Nonlinear PhysicsPolymerRate equationCondensed Matter PhysicsCrackingmedicine.anatomical_structureNuclear Energy and EngineeringchemistryengineeringWeibull distribution
researchProduct

Low-temperature positron-lifetime studies of proton-irradiated silicon

1990

The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific trapping rate of positrons to both of these negatively charged monovacancy-type defects has been fou…

Materials sciencePositronSiliconchemistryProtonAnnealing (metallurgy)chemistry.chemical_elementCrystal structureIrradiationAtomic physicsSingle crystalCrystallographic defectPhysical Review B
researchProduct

Memory effects in MOS capacitors with silicon quantum dots

2001

To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers …

Materials scienceSROOxideBioengineeringInsulator (electricity)Chemical vapor depositionengineering.materialSettore ING-INF/01 - Elettronicalaw.inventionBiomaterialschemistry.chemical_compoundlawThin filmNanocrystal memorybusiness.industrySilicon-rich oxideAmorphous solidCapacitorPolycrystalline siliconchemistryMechanics of MaterialsTransmission electron microscopySingle electron memoryengineeringOptoelectronicsbusiness
researchProduct

Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

2022

The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…

Materials scienceScanning electron microscopeRadiationFocused ion beamelektroniikkakomponentitIonSEEschemistry.chemical_compoundstomatognathic systempuolijohteetGate oxideSilicon carbideSiC MOSFETsHeavy-ionDetectors and Experimental TechniquesElectrical and Electronic EngineeringPower MOSFETSafety Risk Reliability and Qualitybusiness.industryionisoiva säteilyCondensed Matter PhysicsLatent damageAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialssäteilyfysiikkachemistrytransistoritOptoelectronicsSiC MOSFETs; Heavy-ion; Latent damage; SEEsbusinessVoltageMicroelectronics Reliability
researchProduct

Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

Materials scienceSchottky barrierchemistry.chemical_elementSchottky diodes01 natural sciencesIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundXenonsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodeAngle of incidencemodelingchemistryOptoelectronicsbusinession radiation effects
researchProduct

PPG embedded system for blood pressure monitoring

2014

In this work, we have designed and implemented a microcontroller-based embedded system for blood pressure monitoring through a PhotoPlethysmoGraphic (PPG) technique. In our system, it is possible to perform PPG measurements via reflectance mode. Hardware novelty of our system consists in the adoption of Silicon PhotoMultiplier detectors. The signal received from the photodetector is used to calculate the instantaneous heart rate and therefore the heart rate variability. The obtained results show that, by using our system, it is possible to easily extract both the PPG and the breath signal. These signals can be used to monitor the patients during the convalescence both in hospital and at hom…

Materials scienceSettore INF/01 - InformaticaPhotoPlethysmoGraphybusiness.industryDetectorPhotodetectorSettore ING-INF/02 - Campi ElettromagneticiSignalReflectivitySilicon PhotoMultiplierembedded systemMicrocontrollerSilicon photomultipliersensorEmbedded systemHeart rate variabilityBlood pressure monitoringsense organsbusinessComputer hardware2014 AEIT Annual Conference - From Research to Industry: The Need for a More Effective Technology Transfer (AEIT)
researchProduct

Influence of Substrate Hydrophilicity on Structural Properties of Supported Lipid Systems on Graphene, Graphene Oxides, and Silica

2021

Pristine graphene, a range of graphene oxides, and silica substrates were used to investigate the effect of surface hydrophilicity on supported lipid bilayers by means of all-atom molecular dynamics simulations. Supported 1,2-dioleoyl-sn-glycero-3-phosphocholine lipid bilayers were found in close-contact conformations with hydrophilic substrates with as low as 5% oxidation level, while self-assembled monolayers occur on pure hydrophobic graphene only. Lipids and water at the surface undergo large redistribution to maintain the stability of the supported bilayers. Deposition of bicelles on increasingly hydrophilic substrates shows the continuous process of reshaping of the supported system a…

Materials scienceSilicon dioxideLipid BilayersMolecular Conformation02 engineering and technologyModel lipid bilayer010402 general chemistry01 natural scienceslaw.inventionchemistry.chemical_compoundlawMonolayerMaterials ChemistryPhysical and Theoretical ChemistryLipid bilayerGrapheneBilayerSubstrate (chemistry)Silicon Dioxide021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmschemistryChemical engineeringPhosphatidylcholinesGraphitelipids (amino acids peptides and proteins)0210 nano-technologyHydrophobic and Hydrophilic InteractionsLayer (electronics)The Journal of Physical Chemistry B
researchProduct