Search results for "SPECTRA"
showing 10 items of 3542 documents
Measurement and interpretation of the polarization of the x-ray line emission of heliumlike Fe XXV excited by an electron beam
1996
The linear polarization of the 1s2p${\mathrm{}}^{1}$${\mathit{P}}_{1}$\ensuremath{\rightarrow}1${\mathit{s}}^{2}$${\mathrm{}}^{1}$${\mathit{S}}_{0}$ resonance line, the 1s2p${\mathrm{}}^{3}$${\mathit{P}}_{1,2}$\ensuremath{\rightarrow}1${\mathit{s}}^{2}$${\mathrm{}}^{1}$${\mathit{S}}_{0}$ intercombination lines, and the 1s2s${\mathrm{}}^{3}$${\mathit{S}}_{1}$\ensuremath{\rightarrow}1${\mathit{s}}^{2}$${\mathrm{}}^{1}$${\mathit{S}}_{0}$ forbidden line was measured in heliumlike Fe XXV excited near threshold by a monoenergetic electron beam. The measurement was carried out with a high-resolution x-ray spectrometer employing a set of two analyzing crystals that acted as polarizers by selectivel…
Pre-main sequence stars with disks in the Eagle Nebula observed in scattered light
2010
NGC6611 and its parental cloud, the Eagle Nebula (M16), are well-studied star-forming regions, thanks to their large content of both OB stars and stars with disks and the observed ongoing star formation. We identified 834 disk-bearing stars associated with the cloud, after detecting their excesses in NIR bands from J band to 8.0 micron. In this paper, we study in detail the nature of a subsample of disk-bearing stars that show peculiar characteristics. They appear older than the other members in the V vs. V-I diagram, and/or they have one or more IRAC colors at pure photospheric values, despite showing NIR excesses, when optical and infrared colors are compared. We confirm the membership of…
Line Features in Psds of X-Ray Binaries
1994
There is a great deal of evidence that the X-ray emission from High Mass X-Ray Binaries (HMXRB) is often associated with the accretion of matter from a “normal” companion to a degenerate (neutron) star. Provided the magnetic field in these systems is very high (B ~ 1012 — 1013 G), the accretion should occur via the formation of discrete “blobs” which should emit through bremsstrahlung process due to the sudden stop near the surface of the neutron star[2, 3, 5]. There are a number of detections of non-Poissonian aperiodic variations in the intensity of emitted radiation (often referred to as “flickering”) with a characteristic Power Spectrum Density (PSD) broad band feature (red noise)[4, 1]…
Accreting magnetars: a new type of high-mass X-ray binaries?
2012
The discovery of very slow pulsations (Pspin=5560s) has solved the long-standing question of the nature of the compact object in the high-mass X-ray binary 4U 2206+54 but has posed new ones. According to spin evolutionary models in close binary systems, such slow pulsations require a neutron star magnetic field strength larger that the quantum critical value, suggesting the presence of a magnetar. We present the first XMM-Newton observations of 4U 2206+54 and investigate its spin evolution. We find that the observed spin-down rate agrees with the magnetar scenario. We analyse ISGRI/INTEGRAL observations of 4U 2206+54 to search for the previously suggested cyclotron resonance scattering feat…
External noise effects on the electron velocity fluctuations in semiconductors
2008
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover this random field can cause a suppression of the total noise power.
Stochastic resonance in a tunnel diode in the presence of white or coloured noise
1995
We study the signal-to-noise ratio, signal and noise output levels in a fast bistable electronic system: a tunnel diode. We observe stochastic resonance when the system is driven by a sum of a small periodic signal and noise. The phenomenon is investigated for values of the driving frequency as high as 10 kHz. This is the highest frequency value used in SR experiments until now. In the presence of «white noise», we observe a nonmonotonic behavior characterized by a sharp dip in the output noise level measured at 100Hz and 1 kHz. A similar behavior is predicated by recent theories. We also present preliminary experimental results of SR in the presence of an Ornstein-Uhlenbeck noise. For the …
Frequency influence on the hot-electron noise reduction in GaAs operating under periodic signals
2008
A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.
Computer-Aided Simultaneous Determination of Noise and Gain Parameters of Microwave Transistors
1979
A new method for the determination of noise and gain parameters of microwave linear two-ports (transistors) is presented. The method allows the simultaneous determination of the two parameter sets through a proper computer-aided procedure which processes the experimental data obtained from a measuring system employing noise meters and generators only. Experimental verifications carried-out on a microwave low noise transistor in S-band are reported.
On the noise resistance of field-effect transistors at microwave frequencies
2001
This paper presents a survey on the topical aspects of the noise resistance in field-effect transistors (FET) at microwave frequencies. Such noise parameter represents the sensitivity of the device noise figure to the departure from the minimum noise condition and is therefore important in all low-noise applications. The performance of the noise resistance in FETs has been reviewed since the first noise modeling analysis of short-gate devices were presented in the early '70s. The authors also comment and compare their own results on this subject as obtained by extensive experimental activity in the field of noisy device characterization vs. frequency, bias and temperature conditions.
Spectral broadening enhancement in silicon waveguides through pulse shaping
2012
Spectral broadening in silicon waveguides is usually inhibited at telecom wavelengths due to some adverse effects related to semiconductor dynamics, namely, two-photon and free-carrier absorption (FCA). In this Letter, our numerical simulations show that it is possible to achieve a significant enhancement in spectral broadening when we properly preshape the input pulse to reduce the impact of FCA on spectral broadening. Our analysis suggests that the use of input pulses with the correct skewness and power level is crucial for this achievemen This work was financially supported by the Plan Nacional Investigación, Desarrollo e Innovación (I+D +I) under the research project TEC2008-05490, by…