Search results for "Sapphire"
showing 10 items of 114 documents
A complementary laser system for ISOLDE RILIS
2011
The Resonance Ionization Laser Ion Source (RILIS) is a powerful tool for efficient and selective production of radioactive ion beams at Isotope Separator On Line (ISOL) facilities. To avoid isobaric background, highly selective stepwise resonant ionization is applied, using up to three different laser wavelengths. Due to their advantages in terms of stability and reliability, an all solid-state titanium:sapphire (Ti:Sa) system is used or is planned to be installed at the majority of on-line facilities worldwide. Such an all solid-state Ti:Sa laser system is going to be installed at the ISOLDE RILIS at CERN alongside the well-established dye laser system.
Stable and long-time operation of a soft x-ray laser for user applications experiments
2011
LASERIX is a high-power laser facility leading to High-repetition-rate XUV laser pumped by Titanium:Sapphire laser. The aim of this laser facility is to offer Soft XRLs in the 30-7 nm range and auxiliary IR beam that could also be used to produce synchronized XUV sources. This experimental configuration highly enhances the scientific opportunities of the facility, giving thus the opportunity to realize both X-ray laser experiments and more generally pump/probe experiments, mixing IR and XUV sources. In this contribution, the main results concerning both the development of XUV sources(X-Ray lasers and HHG sources) and their use for applications are presented.
Origin of Blue Sapphire in Newly Discovered Spinel–Chlorite–Muscovite Rocks within Meta-Ultramafites of Ilmen Mountains, South Urals of Russia: Evide…
2019
Blue sapphire of gem quality was recently discovered in spinel&ndash
Ex situ investigations of MOCVD-grown gallium nitride nanowires using reflection high energy electron diffraction
2011
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on sapphire substrates, via metal organic chemical vapor deposition (MOCVD). We present ex situ investigations on orientation and structure of grown GaN nanowires on GaN(0001) surface using reflection high energy electron diffraction (RHEED). Both ordered and randomly oriented GaN crystalline structures have been detected.
Solar blind detectors based on AlGaN grown on sapphire
2005
Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…
Growth characteristics of sputter-deposited thin films
1996
Thin films of the heavy-fermion superconductor were deposited on various substrate materials in various orientations by means of a quasi-multilayer sputter process. Strongly (0001)-textured growth of the hexagonal compound was found for a uranium content in the range of 23% to 28% on sapphire and with perfect in-plane order on the latter substrate material. Atomic force microscopy and scanning electron microscopy revealed a Vollmer - Weber-like growth mode resulting in the development of large compressive strain in films on . As a result the electronic transport properties - in particular the temperature dependence of the resistivity - were strongly renormalized. Strong deviations from the …
Layout influence on microwave performance of graphene field effect transistors
2018
The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S -parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance.
Intracavity Frequency Doubling and Difference Frequency Mixing for Pulsed ns Ti:Sapphire Laser Systems at On-Line Radioactive Ion Beam Facilities
2015
Intra-cavity second harmonic generation of a Titanium:sapphire (Ti:sa) laser system has been used to improve the conversion efficiency to the second harmonic. Over the course of several experiments performance data spanning the whole wavelength range of a Ti:sa has been collected, which may be used as a guideline for future experiments. An average output power of up to 3.7 W was achieved, resulting in a conversion efficiency of >75 % to the second harmonic. A wavelength coverage from 340-525 nm has been demonstrated. To extend the wavelength range of the solid state laser system, difference frequency mixing has been applied to the intra-cavity doubled light and the fundamental output of a s…
Chemical Bath Deposition as a Simple Way to Grow Isolated and Coalesced ZnO Nanorods for Light-Emitting Diodes Fabrication
2018
A way to grow and characterize isolated and coalesced ZnO nanorods on $p$ -GaN/sapphire structure is presented. Chemical bath deposition can be used to grow ZnO nanorods of device-quality, simply controlling the duration time of the growth process and the concentration of the nutrient solution in the bath. Increasing the duration of the process, as well as the concentration of the solution, leads to compact and sound layers instead of separated nanorods. However, too high concentrations stop the growth process. Light-emitting diodes fabricated on these ZnO-p-GaN heterostructure have a peak of electroluminescence at 400 nm and exhibit interesting electrical and optical properties. Optical po…
High speed cleaving of crystals with ultrafast Bessel beams
2017
International audience; We develop a novel concept for ultra-high speed cleaving of crystalline materials with femtosecond lasers. Using Bessel beams in single shot, fracture planes can be induced nearly all along the Bessel zone in sapphire. For the first time, we show that only for a pulse duration below 650 fs, a single fracture can be induced in sapphire, while above this duration, cracks appear in all crystallographic orientations. We determine the influential parameters which are polarization direction, crystallographic axes and scanning direction. This is applied to cleave sapphire with a spacing as high as 25 μm between laser impacts.