Search results for "Selenide"
showing 10 items of 100 documents
Nanowires for NEMS Switches
2020
Nanoelectromechanical systems (NEMS) are a promising novel technology for operation in extreme conditions (e.g. high temperature and radiation levels), where complementary semiconductor technology devices might fail due to electronic instability. An example for a NEMS device is a nanowire-based switch, which employs mechanical deflection of a nanowire to open and close an electrical circuit. To date, assembly and operation of individual nanowire based NEMS switches have been successfully demonstrated at laboratory level, but their further technological development remains a challenge. This chapter gives an insight into the current advances in applications of nanowires for NEMS switches. Syn…
An electrochemical route towards the fabrication of nanostructured semiconductor solar cells
2010
This work presents our preliminary results regarding an electrochemical process which allows the growth of nanostructured materials by means of nanopore templates. Also we analyze possible applications of this process to fabricate nanostructured semiconductors, such as CIGS, suitable for photovoltaic devices, and we consider the implications from the perspective of characterization techniques and device modelling when using such a technology.
Electrical and photovoltaic properties of indium‐tin‐oxide/p‐InSe/Au solar cells
1987
Conditions for efficiency improvement and optimization in indium‐tin‐oxide/p‐indium‐selenide solar cells are discussed in this paper. This aim is achieved by using low‐resistivity p‐indium‐selenide and by incorporating a back‐surface‐field contact. This contact is insured by a p‐indium selenide/gold barrier whose rectifying behavior is explained through the complex impurity structure of p‐indium‐selenide. Electrical and photovoltaic properties of the cells are also reported. The efficiency parameters under AM1 simulated conditions have been improved up to 32 mA/cm2 for the short‐circuit current density, 0.58 V for the open‐circuit voltage, and 0.63 for the filling factor. As a result, solar…
The application of the photoacoustic transmittance oscillations for determining elastic constants in gallium and indium selenides
1996
Transmittance periodic oscillations are observed in GaSe and InSe on excitation with optical pulses. Such oscillations are explained in terms of photoacoustic generation of dilatational waves, which become resonant within the crystal. Spectral analysis of those oscillations in samples of different thickness has led to an accurate determination of the longitudinal acoustic‐wave velocity along the crystallographic axis c. Julio.Pellicer@uv.es ; Chantal.Ferrer@uv.es ; Vicente.Munoz@uv.es
Surface passivation of gallium selenide by nitrogen implantation
2002
In this paper we report on the characterization of nitrogen-implanted single-crystal GaSe samples. Nitrogen atoms were implanted at 80 keV, with doses ranging from 4 × 10 13 to 10 15 N + ions cm -2 . Next, samples were aged in open air and characterized by small-area XPS, together with an unimplanted clean surface, in order to quantify the effects of the nitrogen implantation. In general, we found that the oxidation was fully prevented in N + -implanted samples.
Spatial inhomogeneities and defect structures in CIGS and CIS materials: An ab-initio based Monte Carlo study
2011
The chalcopyrite semiconductors CuIn 1−x Ga x Se 2 (CIGS) and CuInSe 2 (CIS) are excellent materials for high efficiency and low cost thin-film solar cells. This is due to the effective absorption of the solar spectrum and the inherent resilience to defects and composition fluctuations. Although the CIGS and CIS material in solar cells is highly inhomogeneous and exhibits a lot of different defects, the cell efficiencies are exceptionally high. If single crystalline absorbers are used, efficiencies are lower. Therefore, studying spatial inhomogeneities and defect structures is of great importance for understanding what supports and what diminishes the efficiency and robustness of the cells.…
Transport measurements under pressure in III–IV layered semiconductors
2007
PACS 61.50.Ks, 62.50.+p, 72.15.Jf, 72.80.Jc This paper reports on Hall effect, resistivity and thermopower effect measurements under high pressure up to 12 GPa in p-type γ-indium selenide (InSe) and e-gallium selenide (GaSe). The paper focuses on two applications of transport measurements under pressure: electronic structure and phase transition studies. As concerns the electronic structure, we investigate the origin of the striking differences between the pressure behaviour of transport parameters in both layered compounds. While the hole concentration and mobility increase moderately and monotonously in e-GaSe up to 10 GPa, a large increase of the hole concentration at near 0.8 GPa and a …
Photoluminescence in silicon-doped n-indium selenide
1994
Photoluminescence results on silicon-doped indium selenide are reported. The effect of temperature and excitation intensity is studied. At low temperature, free and neutral donor bound exciton peaks are observed. Above 100 K only free exciton and band-to-band photoluminescence is detected. In order to give account of the full lineshape as a function of the absorption coefficient, the Urbach absorption tail of InSe is measured. Transmission and reflection photoluminescence spectra are also compared in order to study the effect of carrier diffusion. The shape of the photoluminescence spectrum can be accounted for through a direct gap model.
Photovoltaic module characteristics from CIGS solar cell modelling
2013
We describe our approach to the task of modelling, both at single cell structure and complete module levels, during the solar cell technology development process. This can give very helpful indications, in terms of global photovoltaic module characteristics, for the assessment of intermediate research results and planning of further experiments. We make reference specifically to the fabrication of thin film CIGS solar cells by means of single-step electrodeposition, a technique which appears fairly easy and low-cost but, at the same time, can lead to quite different structural and electrical properties.
Transport properties of silicon doped n-indium selenide
1992
Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.