Search results for "Semiconductor"

Laser-Fabricated Fluorescent, Ligand-Free Silicon Nanoparticles: Scale-up, Biosafety, and 3D Live Imaging of Zebrafish under Development

2022

This work rationalizes the scalable synthesis of ultrasmall, ligand-free silicon nanomaterials via liquid-phase pulsed laser ablation process using picosecond pulses at ultraviolet wavelengths. Results showed that the irradiation time drives hydrodynamic NP size. Isolated, monodisperse Si-NPs are obtained at high yield (72%) using post-treatment process. The obtained Si-NPs have an average size of 10 nm (not aggregated) and display photoemission in the green spectral range. We directly characterized the ligand-free Si-NPs in a vertebrate animal (zebrafish) and assessed their toxicity during the development. In vivo assay revealed that Si-NPs are found inside in all the early life stages of …

A Test Circuit for GaN HEMTs Dynamic Ron Characterization in Power Electronics Applications

2019

Wide bandgap devices such as GaN HEMTs are a promising technology in the field of Power Electronics. Due to the physical properties of the Gallium nitride and the device design, they can outperform their Silicon counterparts for the design of highly efficient power switching converters. However, its design should face certain effects that can diminish its performance. One of such effect is the degradation mechanism known as dynamic onresistance (dynamic RON,), being its mitigation one of the main objectives in the design of the device. In this paper, a circuit is proposed for assessing if this effect is present in GaN transistors in power electronics applications. The circuit allows testing…

Improved Temperature Coefficient Modeling through the Recombination Parameter $\gamma$

2020

This study presents an injection dependent numerical model relating Shocldey-Read-Hall defect parameters in crystalline silicon with the recombination parameter $\gamma$ . We demonstrate how the model can be used to predict $\gamma$ for various single level defects. Additionally, we show that $\gamma$ can be significantly influenced by the injection level, in contrast to what is commonly assumed. The injection dependence is found to correlate with the temperature sensitivity of the Shocldey-Read-Hall lifetime. Finally, we demonstrate that the model can be used to predict the temperature coefficient of the open circuit voltage without the use of a temperature dependent measurement, enabling …

Ab initio studies on the lattice thermal conductivity of silicon clathrate frameworks II and VIII

2016

The lattice thermal conductivities of silicon clathrate frameworks II and VIII are investigated by using ab initio lattice dynamics and iterative solution of the linearized Boltzmann transport equation(BTE) for phonons. Within the temperature range 100-350 K, the clathrate structures II and VIII were found to have lower lattice thermal conductivity values than silicon diamond structure (d-Si) by factors of 1/2 and 1/5, respectively. The main reason for the lower lattice thermal conductivity of the clathrate structure II in comparison to d-Si was found to be the harmonic phonon spectra, while in the case of the clathrate structure VIII, the difference is mainly due to the harmonic phonon spe…

Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

2003

Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed

Peculiar aspects of nanocrystal memory cells: Data and extrapolations

2003

Nanocrystal memory cell are a promising candidate for the scaling of nonvolatile memories in which the conventional floating gate is replaced by an array of nanocrystals. The aim of this paper is to present the results of a thorough investigation of the possibilities and the limitations of such new memory cell. In particular, we focus on devices characterized by a very thin tunnel oxide layer and by silicon nanocrystals formed by chemical vapor deposition. The direct tunneling of the electrons through the tunnel oxide, their storage into the silicon nanocrystals, and furthermore, retention, endurance, and drain turn-on effects, well-known issues for nonvolatile memories, are all investigate…

Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter

2021

In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …

2015

Electrically detected magnetic resonance (EDMR) is a commonly used technique for the study of spin-dependent transport processes in semiconductor materials and electro-optical devices. Here, we present the design and implementation of a compact setup to measure EDMR, which is based on a commercially available benchtop electron paramagnetic resonance (EPR) spectrometer. The electrical detection part uses mostly off-the-shelf electrical components and is thus highly customizable. We present a characterization and calibration procedure for the instrument that allowed us to quantitatively reproduce results obtained on a silicon-based reference sample with a “large-scale” state-of-the-art instru…

High-Density Arrays of Germanium Nanowire Photoresistors

2006

Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and photon tracking devices, far-infrared photoresistors, and numerous other devices. During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nan…

Optical activation of a silicon vibrating sensor

1986

The operation of a micromachined silicon vibrating sensor with both optical excitation and optical interrogation is reported. The proper locations at which the optical excitation should be applied for optimum excitation of different modes of resonance are described.