Search results for "Semiconductor"

2008

ZnO doped with a few per cent (<10%) of magnetic ions such as Co exhibit room temperature (RT) ferromagnetism, transforming it into a very promising candidate for future spin electronic applications. We present x-ray magnetic circular dichroism (XMCD) spectroscopy, which has been used in total electron yield, total fluorescence yield, and reflection mode to investigate the origin of ferromagnetism in such diluted magnetic semiconductor materials in a surface, bulk and interface sensitive way, respectively. We investigated three different types of samples: ZnO doped with 5% Co, artificially layered films, and layered films with additional co-doping of 10% Li. These films are prepared by puls…

Electronic structure calculations forZnFe2O4

2011

Local density approximation was applied to scrutinize the electronic structure and magnetic properties of the spinel ferrite ${\mathrm{ZnFe}}_{2}{\mathrm{O}}_{4}$. Various cation distributions were established to obtain the ground state for the system. In magnetic crystals, the position of the atoms is not enough for symmetry determination. A structure prediction by decreasing the octahedral point group symmetry ${\mathrm{O}}_{h}$ of Fe to ${\mathrm{D}}_{4h}$, ${\mathrm{C}}_{4v}$, and ${\mathrm{C}}_{3v}$ was carried out. The effect of the exchange and correlation terms on the band structure of ${\mathrm{ZnFe}}_{2}{\mathrm{O}}_{4}$ was studied by the generalized gradient approximation $+$ th…

Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

2006

We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events.

Spin scattering and spin-polarized hybrid interface states at a metal-organic interface

2011

Spin scattering at the interface formed between metallic Fe and Cu-phthalocyanine molecules is investigated by spin-polarized scanning tunneling spectroscopy and spin-resolved photoemission. The results are interpreted using first-principles electronic structure theory. The combination of experimental and theoretical techniques allows us to shed light on the role of hybrid interface states for the spin scattering. We show that Cu-phthalocyanine acts, via hybrid interface states, as a local spin filter up to room temperature both below and above the Fermi energy, ${E}_{\mathrm{F}}$. At the same time, the molecule behaves as a featureless scattering barrier in a region of about 1 eV around ${…

Monte Carlo Simulation of Electron Dynamics in Doped Semiconductors Driven by Electric Fields: Harmonic Generation, Hot-Carrier Noise and Spin Relaxa…

2011

In solid state electronics the miniaturization of integrated circuits implies that, even at moderate applied voltages, the components can be exposed to very intense electric fields. Advances in electronics push the devices to operate also under cyclostationary conditions, i.e. under large-signal and time-periodic conditions. A main consequence of this fact is that circuits exhibit a strongly nonlinear behavior. Furthermore, semiconductor based devices are always imbedded into a noisy environment that could strongly affect their performance, setting the lower limit for signal detection in electronic circuits. For this reason, to fully understand the complex scenario of the nonlinear phenomen…

The influence of disorder on the exciton spectra in two-dimensional structures

2019

We study the role of disorder in the exciton spectra in two-dimensional (2D) semiconductors. These can be heterostructures, thin films and multilayers (so-called van der Waals structures) of organometallic perovskites, transition metal dichalcogenides and other semiconductors for optoelectronic applications. We model the disorder by introduction of a fractional Laplacian (with Le´vy index m, defining the degree of disorder) to the Scro¨dinger equation with 2D Coulomb potential. Combining analytical and numerical methods, we observe that the exciton exists only for m 4 1, while the point m = 1 (strongest disorder) corresponds to the exciton collapse. We show also that in the fractional (diso…

External Noise Effects in Doped Semiconductors Operating Under sub-THz Signals

2012

We study the noise-induced effects on the electron transport dynamics in low-doped n-type GaAs samples by using a Monte Carlo approach. The system is driven by an external periodic electric field in the presence of a random telegraph noise source. The modifications caused by the addition of external fluctuations are investigated by studying the spectral density of the electron velocity fluctuations for different values of the noise parameters. The findings indicate that the diffusion noise in low-doped semiconductors can be reduced by the addition of a fluctuating component to the driving electric field, but the effect critically depends on the features of the external noise source.

Resonant rayleigh scattering in semiconductor structures

1995

A detailed study of the relative role played by localized and/or propagating intermediate excitonic states in, resonant Rayleigh scattering (RRS) is presented for a large set of GaAs quantum well (QW) and bulk structures. We show that the two kinds of states contribute to RRS through different mechanisms. We concluded that RRS occurs via localized states in QW heterostructures, very likely due to localization by the interface roughness, while bulk, crystals turn out to be better candidates for RRS via propagating states.

Direct observation of spin wave focusing by a Fresnel lens

2020

Spin waves are discussed as promising information carrier for beyond complementary metal-oxide semiconductor data processing. One major challenge is guiding and steering of spin waves in a uniform film. Here, we explore the use of diffractive optics for these tasks by nanoscale real-space imaging using x-ray microscopy and careful analysis with micromagnetic simulations. We discuss the properties of the focused caustic beams that are generated by a Fresnel-type zone plate and demonstrate control and steering of the focal spot. Thus, we present a steerable and intense nanometer-sized spin-wave source. Potentially, this could be used to selectively illuminate magnonic devices like nano-oscill…

Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling

2004

The transport equations for charges in a semiconductor have been solved for a periodic voltage excitation by means of a harmonic approach, for modelling of microwave and millimetre-wave active devices. The solution is based on the expansion of the unknown physical quantities in Fourier series in the time domain, and on the discretisation in the space domain. A Waveform-Balance technique in the time domain is used to solve the resulting non-linear equations system. In this way the time step is determined only by Nyquist's sampling requirements at the operating frequency, irrespective of the relaxation times of the semiconductor. This approach allows for a longer time step, and therefore a sh…