Search results for "Silicon Carbide"
showing 10 items of 75 documents
The influence of the tape-casting process parameters on the geometric characteristics of SiC tapes
1998
Abstract The production process of the tape-casting technique applied to the production of porous ceramic membranes, suitable for the separation of different chemical species, has been explored, with emphasis on the influence of the operative parameters on the macrogeometric characteristics of the manufactured ceramic porous tapes. The effects of the slurry casting rate, the doctor blade height and the mean particle diameter have been studied and the results reported. The characterization analyses indicate the degree of reliability of this technique to produce planar SiC components and the importance of the particle size in enhancing the structural homogeneity. A study on the variance analy…
Modeling and simulation of a High Pressure Roller Crusher for silicon carbide production
2011
Author's version of a chapter published in the book: 11th International Conference on Electrical Power Quality and Utilisation. Also available from the publisher at: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6128963&tag=1 This paper describes the modeling and simulation of High Pressure Roller Crusher (HPRC) for the production of silicon cabide grains. The study is to make a model for simulation of a High Pressure Roller Crusher. A High Pressure Roller Crusher (HPRC) is an important part in the production of silicon carbide, where the grains are crushed into powder form and then sieved into specified sizes based on its usage. This paper will present a model based on Johanson's…
300°C SiC Blocking Diodes for Solar Array Strings
2009
Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper reports on the stability tests (ESA space mission to Mercury, BepiColombo requirements) performed on these diodes. A DC current stress of 5A has been applied to these diodes at 270°C for 800 hours. These reliability tests revealed both, degradation at the Schottky interface (forward voltage drift) and at the diode top surface due to Aluminum diffusion (bond pull strength degradation). The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal–semiconductor interface properties. Nevertheless, SEM observations of the…
Simulation of parasitic effects on Silicon Carbide devices for automotive electric traction
2020
Wide Band Gap (WBG) semiconductors are increasingly addressed towards Electric Vehicle (EV) applications, due to their significant advantages in terms of high-voltage and low-losses performances, suitable for high power applications. Nevertheless, the packaging in WBG devices represents a challenge for designers due to the notable impact that inductive and capacitive parasitic components can bring in high switching frequency regime in terms of noise and power losses. In this paper, a comparison between conventional Silicon (Si) and emerging Silicon-Carbide (SiC) power switching devices is presented. The effects of inductive parasitic effects and switching frequency are investigated in simul…
Modification of Materials by MeV Ion Beams
2005
Today's fast developing technological based society places ever accelerating demands for new materials and materials processing methods. Leading edge fields as diverse as biomedical tissue engineering, quantum device, optical and magnetic information storage technology as well as immobilization of actinides, all require nanoscale engineering through controlled materials modification. The evolution of these advances from the research science stage to the industrial applications is a particular challenging task. Amongst the beam processing methods for materials modification MeV ions occupy a unique place. They interact strongly with both the atomic and electronic structures of the target mate…
ORR Activity and Stability of Co-N/C Catalysts Based on Silicon Carbide Derived Carbon and the Impact of Loading in Acidic Media
2018
This work was supported by the EU through the European Regional Development Fund under projects TK141 “Advanced materials and high-technology devices for energy recuperation systems” (2014-2020.4.01.15-0011), NAMUR ”Nanomaterials - research and applications” (3.2.0304.12-0397) and by the Estonian institutional research grant No. IUT20-13.
Electro-optical characterization of new classes of Silicon Carbide UV photodetectors
2014
In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in $\hbox{Ni}_{2}\hbox{Si}$ . These devices exploit the pinch-off surface effect. $I$ – $V$ and $C$ – $V$ characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10- $\mu\hbox{m}$ pitch class demonstrates …
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
2018
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
2018
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation peerReviewed
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed