Search results for "Silicon on insulator"
showing 10 items of 23 documents
Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film
2003
Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed
10 Gb/s transmission and thermo-optic resonance tuning in silicon-plasmonic waveguide platform
2011
The first system-level experimental results of hybrid Si-DLSPP structures incorporated into a SOI chip are reported. We demonstrate over 7nm thermo-optical tuning of a Si-Plasmonic racetrack-resonator and verify error-free 10Gb/s transmission through 60um Si-Plasmonic waveguide.
Silicon Single Electron Transistors with Single and Multi Dot Characteristics
2000
AbstractSilicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics o…
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
2001
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
2017
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…
Active plasmonics in WDM traffic switching applications
2012
With metal stripes being intrinsic components of plasmonic waveguides, plasmonics provides a "naturally" energy-efficient platform for merging broadband optical links with intelligent electronic processing, instigating a great promise for low-power and small-footprint active functional circuitry. The first active Dielectric-Loaded Surface Plasmon Polariton (DLSPP) thermo-optic (TO) switches with successful performance in single-channel 10 Gb/s data traffic environments have led the inroad towards bringing low-power active plasmonics in practical traffic applications. In this article, we introduce active plasmonics into Wavelength Division Multiplexed (WDM) switching applications, using the …
Demonstration of a Plasmonic MMI Switch in 10-Gb/s True Data Traffic Conditions
2012
International audience; We report the first experimental performance evaluation of a 75-mu m-long plasmonic multimode interference switch that is hetero-integrated on a silicon-on-insulator platform, operating with 10-Gb/s data signals. The switch exhibits a 2.9-mu s response time and 44.5% modulation depth, while the extinction ratio between the ports alters from 5.4 to -1.5 dB for 35-mW electrical (switching) power. Error-free performance was achieved.
Towards Si-based photonic circuits: Integrating photonic crystals in silicon-on-insulator platforms
2007
In the context of Si-based photonics, we report on a strategy to integrate two optical components, a 3D photonic crystal light emitter and a waveguide, in a silicon-on-insulator patterned substrate. Self-assembled colloidal photonic crystals are produced with high crystalline quality and spatial selectivity. Plane wave expansion and finite-difference time-domain have been used to find suitable configurations for positioning emitters and waveguides. The first steps toward the realisation of these configurations are presented.
Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling
2001
Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.
Single-mode room-temperature emission with a silicon rod lattice
2006
The authors experimentally evidence an increase of light emission efficiency at room temperature in a silicon-on-insulator photonic crystal. The photonic crystal is made of a triangular lattice of silicon rods and operates as a single-mode light extractor. It exhibits a luminescence intensity two orders of magnitude higher than silicon-on-insulator substrate. In light of photoluminescence experiments, emission diagram measurements, and finite difference time domain calculations, they identify the different optical properties of the photonic crystal and they demonstrate the existence of at least a fivefold emission efficiency enhancement per surface unit.