Search results for "Silicon"
showing 10 items of 1391 documents
On the performances of a particle tracking detector based on triangular scintillator bars read out by silicon photomultipliers
2020
Abstract A tracking detector composed of scintillator bars with a triangular cross-section read out by silicon photomultipliers in analog mode was developed. The tracker was designed to instrument a low density spectrometer for neutrino experiments. The performance of the system has been studied by exposing it to charged particle beams at the CERN-PS. The tests have shown that the position resolution in reconstructing charged particles’ tracks is within 2.2 mm over the momentum range 0.5–10 GeV/c.
Silicon detectors for the sLHC
2011
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the RandD programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect …
Operational experience with a large detector system using silicon strip detectors with double sided readout
1992
Abstract A large system of silicon strip detectors with double sided readout has been successfully commissioned over the course of the last year at the e + e − collider LEP. The readout of this 73 728 channel system is performed with custom designed VLSI charge sensitive amplifier chips (CAMEX64A). An overall point resolution of 12 μm on both sides has been acheived for the complete system. The most important difficulties during the run were beam losses into the detector, and a chemical agent deposited onto the electronics; however, the damage from these sources was understood and brought under control. This and other results of the 1991 data-taking run are described with special emphasis o…
Silicon Detector Telescope for proton detection in electron scattering reactions at MAMI
2012
Abstract A new Silicon Detector Telescope has been constructed and installed within the experimental facility of the A1 collaboration at Mainz Microtron, with the goal to detect low-energy protons. It consists of seven silicon layers for energy and angle measurement and a plastic scintillator for triggering purposes. The detector subtends a solid angle up to 88 msr, depending on the distance from the target and covers the proton kinetic energy range of 25–41 MeV with the mean energy resolution σ E = 0.47 MeV , operating at 500 kHz. Digital signal processing methods applied for energy reconstruction have been important for keeping the acceptable energy resolution at high counting rates. The…
Studies for low mass, large area monolithic silicon pixel detector modules using the MALTA CMOS pixel chip
2021
Abstract The MALTA monolithic silicon pixel sensors have been used to study dicing and thinning of monolithic silicon pixel detectors for large area and low mass modules. Dicing as close as possible to the active circuitry will allow to build modules with very narrow inactive regions between the sensors. Inactive edge regions of less than 5 μ m to the electronic circuitry could be achieved for 100 μ m thick sensors. The MALTA chip (Cardella et al., 2019) also offers the possibility to transfer data and power directly from chip to chip. Tests have been carried out connecting two MALTA chips directly using ultrasonic wedge wire bonding. Results from lab tests show that the data accumulated in…
Mechanisms of Electron-Induced Single-Event Latchup
2019
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.
Determination of absolute internal conversion coefficients using the SAGE spectrometer
2016
Abstract A non-reference based method to determine internal conversion coefficients using the SAGE spectrometer is carried out for transitions in the nuclei of 154 Sm, 152 Sm and 166 Yb. The Normalised-Peak-to-Gamma method is in general an efficient tool to extract internal conversion coefficients. However, in many cases the required well-known reference transitions are not available. The data analysis steps required to determine absolute internal conversion coefficients with the SAGE spectrometer are presented. In addition, several background suppression methods are introduced and an example of how ancillary detectors can be used to select specific reaction products is given. The results o…
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
2022
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
2023
The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour. peerReviewed
First Compton telescope prototype based on continuous LaBr3-SiPM detectors
2013
Abstract A first prototype of a Compton camera based on continuous scintillator crystals coupled to silicon photomultiplier (SiPM) arrays has been successfully developed and operated. The prototype is made of two detector planes. The first detector is made of a continuous 16×18×5 mm 3 LaBr 3 crystal coupled to a 16-elements SiPM array. The elements have a size of 3×3 mm 3 in a 4.5×4.05 mm 2 pitch. The second detector, selected by availability, consists of a continuous 16×18×5 mm 3 LYSO crystal coupled to a similar SiPM array. The SPIROC1 ASIC is employed in the readout electronics. Data have been taken with a 22 Na source placed at different positions and images have been reconstructed with…