Search results for "Smut"

showing 10 items of 493 documents

Photoconductivity and photovoltaic effect in indium selenide

1983

Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p‐n junctions, bismuth/p‐type InSe, platinum/n‐type InSe, and indium tin oxyde (ITO)/p‐type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.

Materials sciencePhotoconductivityInorganic chemistryN−Type ConductorsGeneral Physics and Astronomychemistry.chemical_elementPhotovoltaic effectIndium CompoundsEfficiencyCrystalsBismuthPhotovoltaic EffectCharge Carrierschemistry.chemical_compoundP−Type ConductorsIndium Selenides ; Photoconductivity ; Photovoltaic Effect ; Experimental Data ; Crystals ; Doped Materials ; Mobility ; Lifetime ; Diffusion Length ; Charge Carriers ; Electrical Properties ; P−N Junctions ; P−Type Conductors ; N−Type Conductors ; Bismuth ; Platinum ; Indium Compounds ; Tin Oxides ; Efficiency:FÍSICA [UNESCO]SelenideDoped MaterialsPlatinumMobilityIndium Selenidesbusiness.industryPhotoconductivityElectrical PropertiesDopingP−N JunctionsUNESCO::FÍSICATin OxidesDiffusion LengthchemistryOptoelectronicsExperimental DataCharge carrierTinbusinessBismuthIndiumLifetime
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Photoconductive properties of Bi2S3nanowires

2015

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…

Materials sciencePhotoconductivityPHOTODETECTORSThin filmsPhotoconductivity spectrumAluminaNanowireGeneral Physics and AstronomyNanotechnologySemiconductor growth02 engineering and technology010402 general chemistryNanofabrication01 natural sciencesSemiconductor materialsTHIN-FILMSThin filmONE-DIMENSIONAL NANOSTRUCTURESArraysPhotocurrentOne-dimensional nanostructuresMembranesNanowire surfaceNanowiresbusiness.industryAnodizingPhotoconductivityPhotodetectors021001 nanoscience & nanotechnologyCharge carrier trappingARRAYS0104 chemical sciencesMembraneNanolithographyIllumination intensityAnodized aluminaPhotoconductive propertiesSemiconductor quantum wiresOptoelectronicsAlumina membranesCharge carrierElectron trapsPhoton energy0210 nano-technologybusinessBismuth compoundsJournal of Applied Physics
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Enhanced photorefractive properties of Bi-doped Sn2P2S6

2008

International audience; Enhanced photorefractive properties of tin hypothiodiphosphate (Sn2P2S6) crystals as a result of Bi doping are presented. These new crystals were obtained by the vapor-transport technique using stoichiometric Sn2P2S6 composition with an additional amount of Bi up to 0.5 mol. % in the initial compound. The bandgap edges of the obtained crystals are located at ~750 nm and shift toward the red wavelengths with increasing Bi concentration. Sn2P2S6:Bi crystals are found to exhibit larger two-beam coupling gain coefficients (up to 17 cm−1 at a wavelength of 854 nm) as compared to (i) pure Sn2P2S6 (2.5 cm−1 at 854 nm), (ii) Sn2P2S6 crystals modified by the growth conditions…

Materials sciencePhotorefractive materialsNonlinear opticsBand gapAnalytical chemistrychemistry.chemical_element02 engineering and technologyDielectricNon linear material01 natural sciencesTernary compoundsDoped materials010309 opticsOptics0103 physical sciencesTin HypothiophosphatesOptical propertiesbusiness.industryDopingTwo wave mixingStatistical and Nonlinear PhysicsPhotorefractive effect021001 nanoscience & nanotechnologyPhotorefractive effectAtomic and Molecular Physics and OpticsBismuth additionsLight intensityWavelengthchemistryEnergy transferDielectric propertiesOptical materials0210 nano-technologybusinessTinRefractive index
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The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy

2016

We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm−1 . For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in nonstoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the l…

Materials sciencePoint reflectionAnalytical chemistryNanowireBioengineeringNanotechnology02 engineering and technology010402 general chemistry01 natural scienceschemistry.chemical_compoundsymbols.namesakeHigh resolution electron microscopyThermoelectric effectGeneral Materials ScienceBismuth tellurideElectrical and Electronic EngineeringMechanical EngineeringGeneral ChemistryBismuth tellurideThermoelectricity021001 nanoscience & nanotechnology0104 chemical sciencesTEM-EDXchemistryMechanics of MaterialsRaman spectroscopysymbols0210 nano-technologyRaman spectroscopyStoichiometry
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Low melting Metal Catalysed Growth of Tin Disulfide Nanotubes

2009

AbstractWe report here the synthesis of tin disulfide nanotubes by a vapour liquid solid growth using bismuth, a low melting metal, as a catalyst. The reaction was carried out in a single step process by heating SnS2 and bismuth in a horizontal tube furnace at 800oC. TEM analysis allowed proposing a plausible mechanism for the formation of SnS2 nanotubes. Pure material could be obtained by optimizing the reaction based on a product analysis using powder X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) combined with energy dispersive X-ray spectroscopy (EDX).

Materials sciencePolymer characterizationAnalytical chemistrychemistry.chemical_elementCatalysisBismuthMetalchemistryChemical engineeringTransmission electron microscopyvisual_artvisual_art.visual_art_mediumTube furnaceTinHigh-resolution transmission electron microscopy
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Synthesis and thermoelectric characterisation of bismuth nanoparticles

2009

An effective method of preparation of bismuth nanopowders by thermal decomposition of bismuth dodecyl-mercaptide Bi(SC12H25)3 and preliminary results on their thermoelectric properties are reported. The thermolysis process leads to Bi nanoparticles due to the efficient capping agent effect of the dodecyl-disulfide by-product, which strongly bonds the surface of the Bi clusters, preventing their aggregation and significantly reducing their growth rate. The structure and morphology of the thermolysis products were investigated by differential scanning calorimetry, thermogravimetry, X-ray diffractometry, 1H nuclear magnetic resonance spectroscopy, scanning electron microscopy, and energy dispe…

Materials scienceSettore AGR/13 - Chimica AgrariaNanopowderAnalytical chemistryEnergy-dispersive X-ray spectroscopyNanoparticlechemistry.chemical_elementBioengineeringSemimetal–semiconductor transitionBismuthDifferential scanning calorimetrySeebeck coefficientbismuthThermoelectric effectSettore CHIM/01 - Chimica AnaliticaGeneral Materials SciencenanotechnologyBismuth nanoparticleThermoelectric characteristicThermal decompositionSettore CHIM/05 - Scienza E Tecnologia Dei Materiali PolimericiGeneral ChemistryCondensed Matter Physicsthermoelectric propertiesAtomic and Molecular Physics and OpticsThermogravimetrychemistryModeling and SimulationMercaptide thermolysinanoparticlesJournal of Nanoparticle Research
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Inverse-voltammetric determination of bismuth in biomaterials with computer assisted peak evaluation

1988

The inverse-voltammetric determination of low bismuth concentrations in a 1 mol/l HCl as supporting electrolyte was investigated with regard to optimal working conditions. New and old types of mercury-drop electrodes and mercury-film electrodes were compared concerning their sensibility, selectivity and interferences. With both electrodes the determination of 0.1 μg/l to 0.01 μg/l bismuth is possible. The influence of a large excess of copper and antimony on the inverse-voltammetric determination of bismuth was studied in detail.

Materials scienceSupporting electrolyteClinical BiochemistryInorganic chemistrychemistry.chemical_elementBiomaterialGeneral MedicineCopperAnalytical ChemistryBismuthAntimonychemistryElectrodeGeneral Materials ScienceSelectivityFresenius' Zeitschrift für analytische Chemie
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Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in ther…

2021

This work was supported by the European Regional Development Fund (ERDF) project No 1.1.1.1/16/A/257. J. A. acknowledges the ERDF project No. 1.1.1.2/1/16/037. Institute of Solid State Physics, University of Latvia, Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017 TeamingPhase2 under grant agreement No. 739508, project CAMART2 . The raw/processed data required to reproduce these findings cannot be shared at this time as the data also form a part of an ongoing study.

Materials scienceThickness-dependent thermoelectric propertiesChalcogenideMaterials Science (miscellaneous)Energy Engineering and Power Technologychemistry.chemical_element02 engineering and technology010402 general chemistry7. Clean energy01 natural sciencesBismuthlaw.inventionchemistry.chemical_compoundUltrathin filmlawSeebeck coefficientBismuth chalcogenide:NATURAL SCIENCES:Physics [Research Subject Categories]Thin filmFused quartzAntimony tellurideRenewable Energy Sustainability and the Environmentbusiness.industryAntimony telluride021001 nanoscience & nanotechnology0104 chemical sciencesFuel TechnologyNuclear Energy and EngineeringchemistryPhysical vapor depositionOptoelectronics0210 nano-technologybusinessMolecular beam epitaxyNarrow band gap layered semiconductor
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Crystal structure of Bi_{6}Sr_{8-x}Ca_{3+x}O_{22}(-0.5\leq x\leq1.7)$: a mixed valence bismuth oxide related to perovskite

1998

Abstract: The crystal structure of BiSr8-xCa3+xO22 has been determined by single-crystal X-ray diffraction. This phase is the same as Bi9Sr11Ca5Oy that was previously studied by several authors as a secondary phase in the Bi-Sr-Ca-Cu-O system and coexists in thermodynamic equilibrium with the superconductors Bi2Sr2CuO6 and Bi2Sr2CaCu2O8 It crystallizes in the monoclinic space group P2(1)/c, with cell parameters a 11.037(3) Angstrom, b = 5.971(2) Angstrom, c = 19.703(7) Angstrom, beta = 101.46(3)degrees Z = 2. The structure was solved by direct methods and full-matrix least-squares refinement. It is built up by perovskite-related blocks of composition [Sr8-xBi2Ca3+xO16] that intergrow with d…

Materials scienceValence (chemistry)General Chemical EngineeringZone axisPhysicschemistry.chemical_elementGeneral ChemistryCrystal structureBismuthCrystallographyChemistrychemistryX-ray crystallographyMaterials ChemistryMonoclinic crystal systemSolid solutionPerovskite (structure)Chemistry of materials
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Hyperfine transition in209Bi80+—one step forward

2015

The hyperfine transitions in lithium-like and hydrogen-like bismuth were remeasured by direct laser spectroscopy at the experimental storage ring. For this we have now employed a voltage divider which enabled us to monitor the electron cooler voltage in situ. This will improve the experimental accuracy by about one order of magnitude with respect to our previous measurement using the same technique.

Materials scienceVoltage dividerchemistry.chemical_elementElectronCondensed Matter PhysicsAtomic and Molecular Physics and OpticsBismuthchemistryPhysics::Atomic PhysicsAtomic physicsNuclear ExperimentSpectroscopyHyperfine structureMathematical PhysicsStorage ringOrder of magnitudeVoltagePhysica Scripta
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