6533b7d0fe1ef96bd125b86f

RESEARCH PRODUCT

Photoconductivity and photovoltaic effect in indium selenide

J. M. BessonA. ChevyAlfredo SeguraJ.p. Guesdon

subject

Materials sciencePhotoconductivityInorganic chemistryN−Type ConductorsGeneral Physics and Astronomychemistry.chemical_elementPhotovoltaic effectIndium CompoundsEfficiencyCrystalsBismuthPhotovoltaic EffectCharge Carrierschemistry.chemical_compoundP−Type ConductorsIndium Selenides ; Photoconductivity ; Photovoltaic Effect ; Experimental Data ; Crystals ; Doped Materials ; Mobility ; Lifetime ; Diffusion Length ; Charge Carriers ; Electrical Properties ; P−N Junctions ; P−Type Conductors ; N−Type Conductors ; Bismuth ; Platinum ; Indium Compounds ; Tin Oxides ; Efficiency:FÍSICA [UNESCO]SelenideDoped MaterialsPlatinumMobilityIndium Selenidesbusiness.industryPhotoconductivityElectrical PropertiesDopingP−N JunctionsUNESCO::FÍSICATin OxidesDiffusion LengthchemistryOptoelectronicsExperimental DataCharge carrierTinbusinessBismuthIndiumLifetime

description

Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p‐n junctions, bismuth/p‐type InSe, platinum/n‐type InSe, and indium tin oxyde (ITO)/p‐type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.

yearjournalcountryeditionlanguage
1983-02-01
10.1063/1.332050http://hdl.handle.net/10550/12923