Search results for "Spintronic"

showing 10 items of 235 documents

Route towards Dirac and Weyl antiferromagnetic spintronics

2017

Topological quantum matter and spintronics research have been developed to a large extent independently. In this Review we discuss a new role that the antiferromagnetic order has taken in combining topological matter and spintronics. This occurs due to the complex microscopic symmetries present in antiferromagnets that allow, e.g., for topological relativistic quasiparticles and the newly discovered N\'{e}el spin-orbit torques to coexist. We first introduce the concepts of topological semimetals and spin-orbitronics. Secondly, we explain the antiferromagnetic symmetries on a minimal Dirac semimetal model and the guiding role of $\textit{ab initio}$ calculations in predictions of examples of…

PhysicsSpintronicsDirac (software)Order (ring theory)02 engineering and technologyQuantum Hall effect021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesTheoretical physics0103 physical sciencesHomogeneous spaceQuasiparticleAntiferromagnetismCondensed Matter::Strongly Correlated ElectronsGeneral Materials Science010306 general physics0210 nano-technologyQuantumphysica status solidi (RRL) - Rapid Research Letters
researchProduct

Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

2018

The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…

Materials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceSpintronicsCondensed matter physicsVALVESSpin valve02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesSpace chargePoole–Frenkel effectTRANSPORTOrganic semiconductorINTERFACESPIN INJECTIONElectrical resistance and conductanceElectrical resistivity and conductivity0103 physical sciencesMAGNETORESISTANCEHETEROJUNCTIONfilms010306 general physics0210 nano-technologyTEMPERATURE
researchProduct

Efficient Electrical Spin Splitter Based on Nonrelativistic Collinear Antiferromagnetism

2020

Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the N\'eel vector axis. The zero net moment antiferromagnet acts as an electrical spin-splitter with a 34$^\circ$ propagation angle between spin-up and spin-down currents. Correspondingly, the spin-conductivity is a factor of three larger than the record value from a survey of 20,000 non-magnetic spin-Hall materials. We propose a versatile spin-splitter-tor…

PhysicsCondensed Matter - Materials ScienceSpinsField (physics)Condensed matter physicsSpintronicsMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesGeneral Physics and Astronomy01 natural sciences7. Clean energy3. Good healthAb initio quantum chemistry methodsSplitter0103 physical sciencesMoment (physics)AntiferromagnetismCondensed Matter::Strongly Correlated Electrons010306 general physicsSpin-½Physical Review Letters
researchProduct

The promise of spintronics for unconventional computing

2021

Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/o…

Computer scienceFOS: Physical sciencesApplied Physics (physics.app-ph)02 engineering and technology01 natural sciencesQuantum nonlocalityAffordable and Clean EnergyBlueprintMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencescond-mat.mes-hallElectronic engineeringHardware_ARITHMETICANDLOGICSTRUCTURESStandby powerApplied Physics010302 applied physicsSpintronicsCondensed Matter - Mesoscale and Nanoscale PhysicsMechanical EngineeringReservoir computingPhysics - Applied PhysicsMaterials EngineeringPhysik (inkl. Astronomie)Dissipation021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsCMOS integrated circuits; Computation theory; Energy dissipation; Green computing; Spin fluctuations; Spintronics; Tunnel junctionsCMOS0210 nano-technologyUnconventional computingphysics.app-ph
researchProduct

Electric voltage generation by antiferromagnetic dynamics

2015

We theoretically demonstrate dc and ac electric voltage generation due to spinmotive forces originating from domain wall motion and magnetic resonance, respectively, in two-sublattice antiferromagnets. Our theory accounts for the canting between the sublattice magnetizations, the nonadiabatic electron spin dynamics, and the Rashba spin-orbit coupling, with the inter-sublattice electron dynamics treated as a perturbation. This work suggests a new way to observe and explore the dynamics of antiferromagnetic textures by electrical means, an important aspect in the emerging field of antiferromagnetic spintronics, where both manipulation and detection of antiferromagnets are needed.

PhysicsCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed matter physicsSpintronicsFOS: Physical sciencesPerturbation (astronomy)02 engineering and technologyElectron dynamics021001 nanoscience & nanotechnology01 natural sciencesCondensed Matter::Materials ScienceMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesAntiferromagnetismCondensed Matter::Strongly Correlated Electrons010306 general physics0210 nano-technologySpin (physics)VoltagePhysical Review B
researchProduct

Bulk spin polarization of magnetite from spin-resolved hard x-ray photoelectron spectroscopy

2021

Physical review / B 104(4), 045129 (1-10) (2021). doi:10.1103/PhysRevB.104.045129

Materials scienceCondensed matter physicsSpintronicsSpin polarizationPhotoemission spectroscopyFermi levelPolarization (waves)530chemistry.chemical_compoundsymbols.namesakeCondensed Matter::Materials ScienceX-ray photoelectron spectroscopychemistrysymbolsddc:530Spin (physics)Magnetite
researchProduct

Molecular spintronics: the role of coordination chemistry.

2016

Welcome to this themed issue of Dalton Transactions entitled ‘Molecular spintronics: the role of coordination chemistry’.

chemistry.chemical_classificationMaterials scienceSpintronicsTheoryofComputation_GENERALNanotechnology02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesCoordination complexInorganic Chemistrychemistry0210 nano-technologyComputingMilieux_MISCELLANEOUSDalton transactions (Cambridge, England : 2003)
researchProduct

Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices

2017

The appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single-molecule electrical contact at room temperature. The single-molecule conductance of a Au/molecule/Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode. The requirements of the molecule include not just the presence of unpaired electrons: the electronic configuration of the metal center has to provide occupied or empty orbitals that strongly interact with the junction metal electrodes and that are close in energy to their F…

Magnetoresistance02 engineering and technologyElectronic structure010402 general chemistry01 natural sciencesBiochemistryCatalysisMetal L-edgesymbols.namesakeColloid and Surface ChemistryTransition metalMagnetoresistènciaSurface statesDensity functionalsCondensed matter physicsChemistryMagnetoresistanceFermi levelTeoria del funcional de densitatGeneral ChemistryEspintrònicaSpintronics021001 nanoscience & nanotechnology0104 chemical sciencesFerromagnetismsymbolsCondensed Matter::Strongly Correlated ElectronsElectron configuration0210 nano-technology
researchProduct

Thickness dependence of anomalous Hall conductivity in L10-FePt thin film

2019

L10 ordered alloys are ideal models for studying the anomalous Hall effect (AHE), which can be used to distinguish the origin from intrinsic (from band structure) or from extrinsic effects (from impurity scatterings). In the bulk limit of L10 ordered FePt films, the AHE is considered to be dominated by the intrinsic contribution, which mainly comes from the strong spin-orbit interaction (SOI) of Pt atoms and exchange-splitting of Fe atoms. The study of anomalous Hall conductivity (AHC) of L10-FePt thin films is of particular interest for its application in spintronic devices. In order to reduce the effects of defects such as grain boundaries, we chose SrTiO3 as the substrate which has a ver…

Materials scienceAcoustics and UltrasonicsPhonon scatteringCondensed matter physicsSpintronics02 engineering and technologySpin–orbit interaction021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsHall effect0103 physical sciencesGrain boundaryBerry connection and curvatureThin film010306 general physics0210 nano-technologyElectronic band structureJournal of Physics D: Applied Physics
researchProduct

Spin Hall magnetoresistance in antiferromagnetic insulators

2020

Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. Here, we show that the spin Hall magnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spin structure via simple electrical transport experiments by investigating the easy-plane antiferromagnetic insulators $\alpha$-Fe2O3 (hematite) and NiO in bilayer heterostructures with a Pt heavy metal top electrode. While rotating an ext…

010302 applied physicsCondensed Matter - Materials ScienceMagnetization dynamicsMaterials scienceMagnetoresistanceSpintronicsCondensed matter physicsMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesGeneral Physics and Astronomy02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesMagnetic fieldMagnetizationFerromagnetismFerrimagnetism0103 physical sciencesAntiferromagnetismCondensed Matter::Strongly Correlated Electrons0210 nano-technologyJournal of Applied Physics
researchProduct