Search results for "Spintronics"

showing 10 items of 231 documents

Exploring room-temperature transport of single-molecule magnet-based molecular spintronics devices using the magnetic tunnel junction as a device pla…

2019

A device architecture utilizing a single-molecule magnet (SMM) as a device element between two ferromagnetic electrodes may open vast opportunities to create novel molecular spintronics devices. Here, we report a method of connecting an SMM to the ferromagnetic electrodes. We utilized a nickel (Ni)–AlOx–Ni magnetic tunnel junction (MTJ) with the exposed side edges as a test bed. In the present work, we utilized an SMM with a hexanuclear [Mn6(μ3-O)2(H2N-sao)6(6-atha)2(EtOH)6] [H2N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate] complex that is attached to alkane tethers terminated with thiols. These Mn-based molecules were electrochemically bonded between the two Ni electrodes of an…

Materials scienceSpintronicsbusiness.industryGeneral Chemical Engineeringchemistry.chemical_elementGeneral ChemistryNickelTunnel magnetoresistanceFerromagnetismchemistryTunnel junctionMagnetElectrodeOptoelectronicsSingle-molecule magnetbusinessRSC Advances
researchProduct

Design of Molecular Spintronics Devices Containing Molybdenum Oxide as Hole Injection Layer

2017

Materials scienceSpintronicsbusiness.industryMolybdenum oxideHole injection layerGiant magnetoresistance02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesElectronic Optical and Magnetic Materials0103 physical sciencesOptoelectronics010306 general physics0210 nano-technologybusinessSpin injectionAdvanced Electronic Materials
researchProduct

Effect of DC Electric Field on the Emitted THz Signal of Antenna-Coupled Spintronic Emitters

2019

We study the impact of an external electric DC field on antenna-coupled spintronic THz emitters driven by a 90 fs, 1550 nm laser oscillator. Simultaneous application of external electric and magnetic field shows a quadratic decrease in peak-peak THz pulse with increase in the bias voltage. We ascribe this decrease to Joule heating caused by the DC current flowing through the spintronic material.

Materials scienceSpintronicsbusiness.industryTerahertz radiationBiasing02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesMagnetic fieldMagnetizationElectric field0103 physical sciencesOptoelectronicsAntenna (radio)010306 general physics0210 nano-technologyJoule heatingbusiness2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
researchProduct

Impact of pump wavelength on terahertz emission of a cavity-enhanced spintronic trilayer

2018

We systematically study the pump-wavelength dependence of terahertz pulse generation in thin-film spintronic THz emitters composed of a ferromagnetic Fe layer between adjacent nonmagnetic W and Pt layers. We find that the efficiency of THz generation is essentially at for excitation by 150 fs pulses with center wavelengths ranging from 900 to 1500 nm, demonstrating that the spin current does not depend strongly on the pump photon energy. We show that the inclusion of dielectric overlayers of TiO2 and SiO2, designed for a particular excitation wavelength, can enhance the terahertz emission by a factor of of up to two in field.

Materials scienceTerahertz radiationFOS: Physical sciencesPhysics::Opticsterahertz emission02 engineering and technologyDielectricpump wavelength01 natural sciences530Condensed Matter::Materials Science0103 physical sciencesStimulated emissionCommon emitter010302 applied physicsSpintronicsbusiness.industry021001 nanoscience & nanotechnologyspintronic trilayerWavelengthTransmission (telecommunications)Physics::Accelerator PhysicsOptoelectronics0210 nano-technologybusinessIntensity (heat transfer)Optics (physics.optics)Physics - Optics
researchProduct

WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits

2020

International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…

Materials scienceTungsten disulfideWS202 engineering and technology010402 general chemistry01 natural sciencesPulsed laser depositionchemistry.chemical_compoundMonolayerDeposition (phase transition)General Materials ScienceElectronics2D semiconductorsElectronic circuitspintronicsSpintronicsbusiness.industryNanotecnologia021001 nanoscience & nanotechnologypulsed-laser deposition[SPI.TRON]Engineering Sciences [physics]/Electronics0104 chemical sciencesEspectroscòpia RamanSemiconductorchemistrySemiconductorsRaman spectroscopy[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]OptoelectronicsX-ray photoemission spectroscopy0210 nano-technologybusiness
researchProduct

Optical and electronic properties of 2H−MoS2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

2018

Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk $2\mathrm{H}\text{\ensuremath{-}}\mathrm{Mo}{\mathrm{S}}_{2}$ hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of $A$ and $B$ excitons under high pressure, by means of absorption measurements and density-functi…

Materials scienceValence (chemistry)Physics and Astronomy (miscellaneous)SpintronicsCondensed matter physicsbusiness.industryExcitonBinding energy02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesCondensed Matter::Materials ScienceSemiconductor0103 physical sciencesValleytronicsGeneral Materials ScienceDirect and indirect band gapsDensity functional theory010306 general physics0210 nano-technologybusinessPhysical Review Materials
researchProduct

Large enhancement of spin pumping due to the surface bound states in normal metal/superconductor structures

2020

We show that the spin pumping from ferromagnetic insulator into the adjacent metallic spin sink can be strongly stimulated by the superconducting correlations. The key physical mechanism responsible for this effect is the presence of Andreev bound states at the ferromagnetic insulator/superconductor interface. We consider the minimal model when these states appear because of the suppressed pairing constant within the interfacial normal layer. For thin normal layers we obtain a strongly peaked temperature dependence of the Gilbert damping coefficient which has been recently observed in such systems. For thicker normal layers the Gilbert damping monotonically increases down to the temperature…

Materials sciencemagneettiset ominaisuudetsuprajohtavuusFOS: Physical sciencesInsulator (electricity)02 engineering and technology01 natural sciencessuprajohteetMinimal modelMetalSuperconductivity (cond-mat.supr-con)0103 physical sciencesBound state010306 general physicsSuperconductivityspintronicsSpin pumpingCondensed matter physicsCondensed Matter - Superconductivitysuperconductivity021001 nanoscience & nanotechnologyFerromagnetismPairingvisual_artspin (kvanttimekaniikka)visual_art.visual_art_mediumCondensed Matter::Strongly Correlated Electrons0210 nano-technology
researchProduct

Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO

2021

We unambiguously identify the origin of the current-induced magnetic switching of insulating antiferromagnet/heavy metal bilayers. Previously, different reorientations of the Neel order for the same current direction were reported for different device geometries and different switching mechanisms were proposed. Here, we combine concurrent electrical readout and optical imaging of the switching of antiferromagnetic domains with simulations of the current-induced temperature and strain gradients. By comparing the switching in specially engineered NiO/Pt device and pulsing geometries, we can rule out spin-orbit torque based mechanisms and identify a thermomagnetoelastic mechanism to dominate t…

Mechanism (engineering)Materials scienceMagnetic domainSpintronicsCondensed matter physicsNon-blocking I/OAntiferromagnetismTorqueCondensed Matter::Strongly Correlated ElectronsDirect imagingCurrent (fluid)Spintronics XIV
researchProduct

The half-metallic ferromagnet

2007

Abstract Electronic structure calculation were used to predict a new material for spintronic applications. Co 2 Mn 0.5 Fe 0.5 Si is one example which is stable against on-site correlation and disorder effects due to the position of the Fermi energy in the middle of the minority band gap. Experimentally the sample were made exhibiting L 2 1 structure and a high magnetic order.

MetalMaterials scienceFerromagnetismCondensed matter physicsSpintronicsBand gapMagnetic ordervisual_artvisual_art.visual_art_mediumFermi energyElectronic structureCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsJournal of Magnetism and Magnetic Materials
researchProduct

Diindeno-fusion of an anthracene as a design strategy for stable organic biradicals

2016

The consequence of unpaired electrons in organic molecules has fascinated and confounded chemists for over a century. The study of open-shell molecules has been rekindled in recent years as new synthetic methods, improved spectroscopic techniques and powerful computational tools have been brought to bear on this field. Nonetheless, it is the intrinsic instability of the biradical species that limits the practicality of this research. Here we report the synthesis and characterization of a molecule based on the diindeno[b,i]anthracene framework that exhibits pronounced open-shell character yet possesses remarkable stability. The synthetic route is rapid, efficient and possible on the gram sca…

Models MolecularChemical substanceFree RadicalsGeneral Chemical EngineeringChemistry OrganicElectronsCrystallography X-Ray010402 general chemistryPhotochemistry01 natural sciencesMagneticschemistry.chemical_compoundTriplet stateAnthracenesFusionAnthraceneMolecular StructureSpintronics010405 organic chemistryTemperatureGeneral Chemistry0104 chemical scienceschemistryPolycyclic HydrocarbonsScience technology and societyDerivative (chemistry)Nature Chemistry
researchProduct