Search results for "Sputtering"
showing 10 items of 136 documents
Composition dependence ofSi1−xGexsputter yield
2005
Sputtering yields have been measured for unstrained ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ $(x=0--1)$ alloys when bombarded with ${\mathrm{Ar}}^{+}$ ions within the linear cascade regime. Nonlinear S-shape dependence of the sputter yield as a function of the alloy composition has been revealed. The dependence is analyzed within the frameworks of the cascade theory conventionally accepted to be the most systematic to date theoretical approach in sputtering. In view of a linear composition dependence predicted for the sputter yield by the cascade theory adapted for polyatomic substrates, the nonlinearity observed in our experiments is shown to be related to the alloying effect on…
Quantum well intermixing in GaInNAs/GaAs structures
2003
We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. …
Amorphous TiO2 in LP-OMCVD TiNxOy thin films revealed by XPS
2001
Abstract TiN(O)–TiO 2 thin films were prepared on Si(1 0 0) by the low pressure organo metallic chemical vapor deposition (LP-OMCVD) method, using ammonia and titanium isopropoxide as precursors. In order to complete previous characterizations, an Ar + bombardment/XPS coupled study was carried out. This method is based on the fact that the behavior of a compound towards an ion bombardment is a function of its composition. In particular, Ar + bombardment of TiO 2 (whatever its form) leads to a preferential sputtering of oxygen atoms with subsequent reduction of titanium and formation of Ti 3+ and Ti 2+ easily detectable by XPS from a significant broadening of the Ti 2p lines. In the opposite…
Reactive direct current magnetron sputtered TiO2 thin films with amorphous to crystalline structures.
2008
International audience; TiO2 thin films were deposited on soda–lime glass substrates by reactive direct current magnetron sputtering in a mixture of pure argon and oxygen. The influence of both the deposition time, td, and the post-annealing treatments on the films morphology, composition and structure was analyzed by scanning electron microscopy, ellipsometry, X-ray photoelectrons spectroscopy, X-ray diffraction (XRD) and Raman spectroscopy. Amorphous TiO2 was obtained for the shortest deposition time, td=15 min. Increasing td up to 30 min, poorly crystallized anatase and rutile phases were formed together with amorphous TiO2, as was revealed by complementary XRD patterns and Raman spectra…
Study of the structural changes induced by air oxidation in Ti–Si–N hard coatings.
2008
International audience; 3-μm thick Ti–Si–N coatings were deposited on polished X38CrMoV5 substrates by sputtering a composite Ti–Si target in Ar–N2 reactive mixture. Oxidation tests were performed in air at 700 °C during 2 h. Whatever the silicon content in the range 0–4 at.%, no silicon containing compound was detected by XRD before air oxidation and only the TiN phase was evidenced. The mean grain size estimated from the full width at half maximum of the TiN (111) diffraction peak was close to 10 nm. As commonly reported for Ti–Si–N films, the hardness showed a maximum at 51 GPa versus the Si content. After oxidation of the TiN film, XRD and micro-Raman analyses revealed the occurrence of…
Structural Studies of Titanium Oxide Multilayers
2005
Multilayers of titanium oxide on conductive glasses (silica, covered with indium/tin and tin oxides) were obtained by different methods (from suspension, by sol–gel, by vacuum sputtering). X-ray diffraction and positron annihilation depth-resolved characterization of these samples are presented. The data allow us to determine optimal deposition parameters, in order to obtain the anatase phase, important in practical applications in photoelectrochemical cells.
Black carbon-doped TiO2 films: Synthesis, characterization and photocatalysis
2019
This research is funded by the European Social Fund according to the activity ‘Improvement of researchers’ qualification by implementing world-class R&D projects’ of Measure No. 09.3.3-LMT- K-712, project „Investigation of the application of TiO2 and ZnO for the visible light assisted photocatalytical disinfection of the biologically contaminated water“ (09.3.3-LMT-K-712-01-0175). The authors express gratitude for the S. Tuckute, M. Urbonavicius, G. Laukaitis and K. Bockute for their valuable input in current work. © 2019. This work is licensed under a CC BY-NC-ND 4.0 license.
Photoelectrochemical evidence of nitrogen incorporation during anodizing sputtering--deposited Al-Ta alloys.
2015
Anodic films were grown to 20 V on sputtering-deposited Al–Ta alloys in ammonium biborate and borate buffer solutions. According to glow discharge optical emission spectroscopy, anodizing in ammonium containing solution leads to the formation of N containing anodic layers. Impedance measurements did not evidence significant differences between the dielectric properties of the anodic films as a function of the anodizing electrolyte. Photoelectrochemical investigation allowed evidencing that N incorporation induces a red-shift in the light absorption threshold of the films due to the formation of allowed localized states inside their mobility gap. The estimated Fowler threshold for the intern…
The influence of Sb doping on the local structure and disorder in thermoelectric ZnO:Sb thin films
2023
The experiment at HASYLAB/DESY was performed within the project I-20200161 EC. The research leading to this result has been supported by the project CALIPSOplus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01–2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2. This work was carried out in part through the use of the INL Advanced Electron Microscopy, Imaging and Spectroscopy Facility. This work (proposal ID 2018–020-022469) was car…
<title>Electrochromism in oxyfluoride thin films</title>
1994
Oxyfluoride films based on W and Ti were prepared by reactive sputtering in plasmas containing O2 + CF4. The deposition rate was large, particularly when chemical sputtering was promoted by heating the target. The films could show large charge insertion/extraction, high coloration efficiency, and good cycling durability.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.