Search results for "Surfaces and interfaces"
showing 10 items of 939 documents
Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition
2013
Abstract Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R rms values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on ro…
Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition
2015
ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). T…
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
2012
The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…
Aluminum oxide from trimethylaluminum and water by atomic layer deposition:The temperature dependence of residual stress, elastic modulus, hardness a…
2014
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD enables conformal growth on 3-dimensional structures at relatively low temperatures. For MEMS device design and fabrication, the understanding of stress and mechanical properties such as elastic modulus, hardness and adhesion of thin film is crucial. In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al2O3) films grown at 110-300 C from trimethylaluminum and water is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by na…
Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics
2008
This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…
Colloidal lithography and Metal-Organic Chemical Vapor Deposition process integration to fabricate ZnO nanohole arrays
2010
A complete set up of optimal process conditions for an effective colloidal lithography/catalyst assisted MOCVD process integration is presented. It mainly focuses on the determination of the deposition temperature threshold for ZnO Metal-Organic Chemical Vapour Deposition (MOCVD) as well as the concentration of metal-organic silver (Ag) catalyst. Indeed, the optimization of such process parameters allows to tailor the ZnO film morphology in order to make the colloidal lithography/catalyst assisted MOCVD approach a valuable bottom up method to fabricate bi-dimensional ordered ZnO nanohole arrays. (C) 2010 Elsevier B.V. All rights reserved.
Tribological properties of commercial optical disks estimated from nanoindentation and scratch techniques
2007
Abstract The structure of optical disks is a complex superposition of several layers with different objectives. The most external layer is usually designed with a protective purpose. When the scratch of the substrate occurs, the optical properties of the device decrease inducing a deficiency in the storage or access of data. Nowadays, the latest commercial optical disks exhibit protective coatings made of polymeric materials (copolymers, and polymeric matrix composite materials). The efficiency of these layers depends on a combination of several mechanical properties like hardness and Young's modulus. In this work, a compositional and mechanical study was carried out on four commercial opti…
Effects of Metal-Organic Chemical Vapour Deposition grown seed layer on the fabrication of well aligned ZnO nanorods by Chemical Bath Deposition
2011
Well aligned, long and uniform ZnO nanorods have been reproducibly fabricated adopting a two-steps Metal-Organic Chemical Vapour Deposition (MOCVD) and Chemical Bath Deposition (CBD) fabrication approaches. Thin (<100 nm) ZnO buffer layers have been seeded on silicon substrates by MOCVD and ZnO layers have been subsequently grown, in form of well textured nanorods, using CBD. It has been found that the structure and thickness of the seed layer strongly influence the final morphology and the crystal texturing of ZnO nanorods as well as the CBD growth rate. There is, in addition, a strong correlation between morphologies of CBD grown ZnO nanorods and those of the seed layer underneath. Thus, …
Electro-optical spectroscopy on aggregated chromophore systems in Langmuir-Blodgett films
1992
Linear and quadratic Stark spectra were measured on LB films that contained a hydrophobically substituted cyanine chromophore in binary mixtures with arachidic acid. The external field was applied normal or parallel to the film surface on samples with different internal symmetry. It was found that the orientation of the symmetry axis of the dye molecule is close to the surface normal. A significant number of molecules, 5–10%, are flipped head-to-tail from the main orientation. Parallel to the film surface, large polarizability changes on electronic excitation, Δα ∼ 1000 A3, were observed that reflect electron delocalization over aggregates. At low dye concentrations, large internal electric…
Mixed silane self assembled monolayers and their in situ modification
1998
Mixed self assembled silane monolayers were prepared by coadsorption of Br and methyl terminated trichlorosilanes. By subsequent in situ modification the Br groups were converted into amino groups which can be used to tether polyglutamates to the surface. Here we describe the characterization of the monolayers by means of contact angle measurements and X-ray photoelectron spectroscopy (XPS). Both methods clearly indicate that the Br terminated silane is preferentially adsorbed from the solution. Following the in situ modification by XPS a yield of approximately 80% was determined for the substitution of the bromine by azide, whereas the yield for subsequent reduction to the amine is close t…