Search results for "Thin-Films"
showing 10 items of 27 documents
Electrochemical Deposition Mechanism for ZnO Nanorods: Diffusion Coefficient and Growth Models
2011
Fabrication of nanostructured ZnO thin films is a critical process for many applications based on semiconductor devices. So on understanding of the electrochemical deposition mechanism is also fundamental for knowing the optimal conditions on growth of ZnO nanorods by electrodeposition. In this paper the electrochemical mechanism for ZnO nanorods formation is studied. Results are based on the evolution of the diffusion coefficient using the Cotrell equation, and different growth models proposed by Scharifcker and Hills for nucleation and growth.
Light absorption and electrical transport in Si:O alloys for photovoltaics
2010
Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was …
Prussian Blue Analogues of Reduced Dimensionality
2012
Abstract: Mixed-valence polycyanides (Prussian Blue analogues) possess a rich palette of properties spanning from room-temperature ferromagnetism to zero thermal expansion, which can be tuned by chemical modifications or the application of external stimuli (temperature, pressure, light irradiation). While molecule-based materials can combine physical and chemical properties associated with molecular-scale building blocks, their successful integration into real devices depends primarily on higher-order properties such as crystal size, shape, morphology, and organization. Herein a study of a new reduced-dimensionality system based on Prussian Blue analogues (PBAs) is presented. The system is …
Optical modeling of nickel-base alloys oxidized in pressurized water reactor
2012
International audience; The knowledge of the aging process involved in the primary water of pressurized water reactor entails investigating a mixed growth mechanism in the corrosion of nickel-base alloys. A mixed growth induces an anionic inner oxide and a cationic diffusion parallel to a dissolution-precipitation process forms the outer zone. The in situ monitoring of the oxidation kinetics requires the modeling of the oxide layer stratification with the full knowledge of the optical constants related to each component. Here, we report the dielectric constants of the alloys 600 and 690 measured by spectroscopic ellipsometry and fitted to a Drude-Lorentz model. A robust optical stratificati…
Atomic layer deposition of ternary ruthenates by combining metalorganic precursors with RuO4 as the co-reactant
2022
In this work, the use of ruthenium tetroxide (RuO4) as a co-reactant for atomic layer deposition (ALD) is reported. The role of RuO4 as a co-reactant is twofold: it acts both as an oxidizing agent and as a Ru source. It is demonstrated that ALD of a ternary Ru-containing metal oxide (i.e. a metal ruthenate) can be achieved by combining a metalorganic precursor with RuO4 in a two-step process. RuO4 is proposed to combust the organic ligands of the adsorbed precursor molecules while also binding RuO2 to the surface. As a proof of concept two metal ruthenate processes are developed: one for aluminum ruthenate, by combining trimethylaluminum (TMA) with RuO4; and one for platinum ruthenate, by c…
A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
2020
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1-1.4 angstrom/cycle for substrate tempe…
Microwave harmonic emission in MgB2 superconductor: Comparison with YBA2CU3O7
2006
We report results of microwave second-harmonic generation in ceramic samples of MgB2, prepared by different methods. The SH signal has been investigated as a function of the temperature and the static magnetic field. The results are discussed in the framework of models reported in the literature. We show that the peculiarities of the SH signal are related to the specific properties of the sample. A comparison with the results obtained in ceramic and crystalline YBa2Cu3O7 shows that the second-harmonic emission in MgB2 is weaker than that observed in ceramic YBa2CuO7. (c) 2006 Wiley Periodicals, Inc.
Ionic and Free Solvent Motion in Poly(azure A) Studied by ac-Electrogravimetry
2011
International audience; This work is focused on the mechanistic aspects of the redox behavior of poly(azure A) taking advantage of the controlled modulation of their oxidation states by ac-electrogravimetry. The originality of this technique is its ability to discriminate between cation and anion involved in the charge compensation process and the accompanying free solvent transfer, directly or indirectly. Two processes were proposed where the faster ionic exchange is considered to be the participation of the anion species acting as counterions whereas the slower one is related to the proton transfer. The proton is implied as reactants for the two electroactive sites identified in the polym…
Nanostructural depth-profile and field-effect properties of poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films
2008
The correlations between morphological features and field-effect properties of poly(alkoxyphenylene-thiophene) thin Langmuir–Schafer film deposited on differently terminated gate dielectric surfaces, namely bare and methyl functionalized thermal silicon dioxide (t-SiO2), have been systematically studied. The film morphology has been investigated at different film thickness by Scanning Force Microscopy. Films thicker than a few layers show comparable morphology on both dielectric surfaces while differences are seen for the ultra-thin polymer deposit in close proximity to the substrate. Such deposit is notably more heterogeneous on bare t-SiO2, while a more compact and uniform nanogranular st…
Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells
2015
We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters-characteristic of such devices-with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depe…