Search results for "Thin"

Atomic Layer Deposition of Osmium

2011

Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 °C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thi…

Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors

2013

Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)2, TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300–350 °C. The films were studied by UV–vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was t…

Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry

2006

The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5–30 nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25 nm thick NiSi films and atomic layer deposited 6 nm thick HfxSiyOz f…

Impact of the molecular structure of an indandione fragment containing azobenzene derivatives on the morphology and electrical properties of thin fil…

2016

Abstract The solution casting method is low-cost processing method. Moreover, it is possible to prepare amorphous thin films by using this method, and thus, both optical quality and electrical properties could be improved in compare to polycrystalline films made by thermal evaporation in vacuum. Therefore, low-molecular-weight compounds that form amorphous structure from solution could be promising in organic electronics. In this work film morphology, molecule energy levels, and charge carrier mobility in thin films of indandione fragment containing azobenzene derivatives were studied. Deep charge carrier trapping states that drastically influenced charge carrier mobility were observed for …

Single crystal-like thin films of blue bronze

2021

Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 O 3 (1-102) and S r T i O 3 (510) substrates. Structural and imaging characterization revealed good quality films with well oriented grains of few microns in length. Both non-selective (transport) and order-selective (femtosecond pump-probe spectroscopy) probes revealed charge density wave properties that are very close to those of the single crystals. The films exhibit metal-semiconductor phase transition in resistivity, pump-probe data show phase transition at the same temperature as the single crystal and the threshold for the photo-induced phase transition is approximately the same as in…

Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire

2020

A detailed structural investigation of the semiconductor-to-metal transition (SMT) in vanadium dioxide thin films deposited on sapphire substrates by pulsed laser deposition was performed by in situ temperature-dependent X-ray diffraction (XRD) measurements. The structural results are correlated with those of infrared radiometry measurements in the SWIR (2.5-5 μm) and LWIR (8-10.6 μm) spectral ranges. The main results indicate a good agreement between XRD and optical analysis, therefore demonstrating that the structural transition from monoclinic to tetragonal phases is the dominating mechanism for controlling the global properties of the SMT transition. The picture that emerges is a SMT tr…

2021

Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We …

Electromagnetically induced switching of ferroelectric thin films

2007

We analyze the interaction of an electromagnetic spike (one cycle) with a thin layer of ferroelectric medium with two equilibrium states. The model is the set of Maxwell equations coupled to the undamped Landau-Khalatnikov equation, where we do not assume slowly varying envelopes. From linear-scattering theory, we show that low-amplitude pulses can be completely reflected by the medium. Large-amplitude pulses can switch the ferroelectric. Using numerical simulations and analysis, we study this switching for long and short pulses, estimate the switching times, and provide useful information for experiments.

Transport properties of Bi2Sr2Ca2Cu3O10+δ Bicrystal Grain Boundary Josephson Junctions and SQUIDs

1996

Josephson junctions and SQUIDs on 36.8° SrTiO 3 bicrystal substrates were prepared from epitaxial Bi 2 Sr 2 Ca 2 Cu 3 O 10+δ thin films with critical temperatures around 95K. The current-voltage characteristics are well described by the resistively and capacitively shunted junction model. I c R n products of 50μV at 77K and 0.7mV at 4.2K have been reached. The I c (B) dependence is symmetric to B = 0 with an I c suppression of 90% in the first minimum. Nevertheless it turns out, that the junctions are inhomogeneous on a μm scale. SQUID modulations observed at 78K indicate a flux-voltage transfer function of 2.7μV/Φ 0 at this temperature.

Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy

2019

The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a promising material for the memristor application since it is featured by high oxygen ion mobility, and the oxygen vacancy concentration in YSZ can be controlled by varying the molar fraction of the stabilizing yttrium oxide. Due to the low diameter of the CAFM probe contact to the YSZ film (similar to 10nm), we are able to measure the electric current flowing through an individual filament both in the low resistive state (LRS) and in the high r…