Search results for "Toe"

Changes in Amorphous Hydrogenated Carbon Films by Ultraviolet and Infrared Laser Irradiation

2013

Amorphous hydrogenated carbon lms were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene hydrogen gas mixtures. The lms were irradiated with a nanosecond Nd:YAG laser working at the rst harmonics (λ1 = 1064 nm), the fourth harmonics (λ4 = 266 nm) or with a Nd:YVO4 laser working at the third harmonic (λ3 = 355 nm). The lms were studied by the Raman scattering, micro-Fourier transform infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength λ1 = 1064 nm leads to graphitization and formation of the silicon carbide, because o…

Scanning electron microscopy analysis of defect clusters in multicrystalline solar grade silicon solar cells

2014

Solar cells from an identical commercial manufacturing unit have been investigated by electroluminescence to first detect the defect clusters. A further analysis has been done by scanning electron microscopy in secondary electron imaging mode to understand the propagation mechanism of defects. It appears that defect cluster boundaries can be very sharp or spread in the bulk with little apparent effect on the overall cell efficiency. And it is shown that grain boundaries act clearly as arrests to further propagation of these defects.

Micromoulding of three-dimensional photonic crystals on silicon substrates

2003

International audience; The growth of three-dimensional photonic crystals (PhCs) on patterned silicon substrates is reported. It is shown that deep trenches can be uniformly filled by a self-assembly of polymer microspheres, in a close-packed face-centred cubic lattice. The crystalline quality is compared for different channel widths. These observations are confirmed by optical reflectance measurements in the visible range, showing a bandwidth of enhanced reflection. The possibility to detach the PhC, i.e. to use the substrate as a mould, is also demonstrated. The potential of this approach for building PhC-based complex architectures is discussed.

Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter

2021

In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …

2015

Electrically detected magnetic resonance (EDMR) is a commonly used technique for the study of spin-dependent transport processes in semiconductor materials and electro-optical devices. Here, we present the design and implementation of a compact setup to measure EDMR, which is based on a commercially available benchtop electron paramagnetic resonance (EPR) spectrometer. The electrical detection part uses mostly off-the-shelf electrical components and is thus highly customizable. We present a characterization and calibration procedure for the instrument that allowed us to quantitatively reproduce results obtained on a silicon-based reference sample with a “large-scale” state-of-the-art instru…

Micromorph silicon tandem solar cells with fully integrated 3D photonic crystal intermediate reflectors

2010

A 3D photonic intermediate reflector for textured micromorph silicon tandem solar cells has been investigated. In thin-film silicon tandem solar cells consisting of amorphous and microcrystalline silicon with two junctions of a-Si/c-Si, efficiency enhancements can be achieved by increasing the current density in the a-Si top cell providing an optimized current matching at high current densities. For an ideal photon-management between top and bottom cell, a spectrally-selective intermediate reflective layer (IRL) is necessary. We present the first fully-integrated 3D photonic thin-film IRL device incorporated on a planar substrate. Using a ZnO inverted opal structure the external quantum eff…

On-chip periodic arrays of optical traps based on the superposition of guided modes in silicon waveguides

2019

Since the pioneering work of Kawata and Tani [1], photonic waveguides have long been regarded as efficient optical conveyor belts for potential lab-on-a-chip applications. Indeed, near-field optical forces arising at the surface of such waveguides lead to efficient on-chip guided propulsion of micro- and even nanoparticles [2], as well as cells and bacteria in liquid solutions [3]. However, achieving stable and precisely controlled optical trapping of particles at the surface of a waveguide has been made possible only recently, and even then, it still requires complex photonic electro-optic tools to produce and handle on-chip standing waves [4].

Confocal spectromicroscopy of amorphous and nanocrystalline tungsten oxide films

2007

A Raman confocal spectromicroscopic system was used to study in situ phase composition and surface morphology in amorphous and nanocrystalline tungsten oxide and tungstate thin films, prepared on silicon and glass substrates by dc magnetron co-sputtering technique. The possible use of these films for the phase-change optical recording was demonstrated using 442 nm He–Cd laser with a variable power of up to 50 mW. The formation of nanocrystalline tungsten trioxide or tungstate phases was observed under the laser irradiation. These nanocrystalline phases show relatively strong Raman activity, which can be used for information reading purposes. A multilayer structure composed of several tungst…

Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide

2001

Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …

Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

2012

We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.