Search results for "Toe"

showing 10 items of 3824 documents

Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

2012

16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.

Physicsta114business.industryNAND gateDDR3 SDRAMHeavy ion irradiationFlash (photography)MBusGigabitElectronic engineeringOptoelectronicsHeavy ionbusinessSensitivity (electronics)
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SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

2011

The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.

Physicsta114ta213business.industryElectrical engineeringNAND gateOptoelectronicsAngular dependenceIrradiationbusinessHeavy ion irradiationIon2011 IEEE Radiation Effects Data Workshop
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Acceptor Concentration Dependence of Förster Resonance Energy Transfer Dynamics in Dye–Quantum Dot Complexes

2014

The dynamics of the photoinduced Forster resonance energy transfer (FRET) in a perylene diimide–quantum dot organic–inorganic hybrid system has been investigated by femtosecond time-resolved absorption spectroscopy. The bidentate binding of the dye acceptor molecules to the surface of CdSe/CdS/ZnS multishell quantum dots provides a well-defined dye-QD geometry for which the efficiency of the energy transfer reaction can be easily tuned by the acceptor concentration. In the experiments, the spectral characteristics of the chosen FRET pair facilitate a selective photoexcitation of the quantum dot donor. Moreover, the acceptor related transient absorption change that occurs solely after energy…

Physics::Biological PhysicsAbsorption spectroscopyChemistryCondensed Matter::Mesoscopic Systems and Quantum Hall EffectPhotochemistryAcceptorSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPhotoexcitationCondensed Matter::Materials Sciencechemistry.chemical_compoundGeneral EnergyFörster resonance energy transferQuantum dotChemical physicsUltrafast laser spectroscopyMoleculePhysics::Chemical PhysicsPhysical and Theoretical ChemistryPeryleneThe Journal of Physical Chemistry C
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Highly transparent and birefringent chromophores for organic photorefractive materials

1999

Abstract A series of chromophores for application in organic photorefractive (PR) materials is investigated by electro-optical absorption measurements (EOAM). This experimental technique yields information on the transition dipole moment μ ag , the ground-state dipole moment μ g , and the change of the dipole moment upon optical excitation Δ μ within the intense charge transfer (CT) band of the dyes. It is shown that the results of the EOAM experiment allow us to estimate the PR figures-of-merits (FOMs) of the chromophores by either perturbational two-level equations or Kramers–Kronig transformation. In particular, chromophores based on the heterocyclic dihydropyran and dihydropyridine grou…

Physics::Biological PhysicsBirefringencebusiness.industryChemistryTransition dipole momentGeneral Physics and AstronomyPhotorefractive effectChromophoreAcceptorMolecular physicsOrganic photorefractive materialsDipolePolarizabilityOptoelectronicsPhysics::Chemical PhysicsPhysical and Theoretical ChemistrybusinessChemical Physics
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Spin Polarimetry and Magnetic Dichroism on a Buried Magnetic Layer Using Hard X-ray Photoelectron Spectroscopy

2011

The spin-resolved electronic structure of buried magnetic layers is studied by hard X-ray photoelectron spectroscopy (HAXPES) using a spin polarimeter in combination with a high-energy hemispherical electron analyzer at the high-brilliance BL47XU beamline (SPring-8, Japan). Spin-resolved photoelectron spectra are analyzed in comparison with the results of magnetic linear and circular dichroism in photoelectron emission in the case of buried Co2FeAl0.5Si0.5 layers. The relatively large inelastic mean free path (up to 20 nm) of fast photoelectrons enables us to extend the HAXPES technique with electron-spin polarimetry and to develop spin analysis techniques for buried magnetic multilayers a…

Physics::Instrumentation and DetectorsChemistrybusiness.industryGeneral EngineeringPolarimetryGeneral Physics and AstronomyElectronPhotoelectric effectDichroismInelastic mean free pathMolecular physicsOpticsX-ray photoelectron spectroscopyBeamlineSpin (physics)businessJapanese Journal of Applied Physics
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Deploying Genome Editing Tools for Dissecting the Biology of Nut Trees

2019

Walnuts are among the most important nut crops grown in temperate regions of the world. Commercial production in California, and increasingly worldwide, relies on only few clonally grafted scion genotypes, particularly “Chandler,” and more recently clonally propagated disease-resistant rootstocks. Diseases, nematodes, insect pests, abiotic stresses, and other nutritional and environmental factors, can reduce walnut productivity and quality, affecting grower profitability. The California Walnut Breeding Program at UC Davis has developed and released scion cultivars and rootstocks to help address some of these problems. Sequencing of the walnut genome is expected to speed walnut breeding by f…

Phytoene desaturaseCRISPR-Cas9; gene-editing; gRNA; nut crops; oxidative stress; phytoene desaturase; plastid healthBreeding programnut cropgRNAgene-editinglcsh:TX341-641HorticultureManagement Monitoring Policy and LawBiologyGenomeCropGenome editingSettore AGR/07 - Genetica Agrariaoxidative stressGlobal and Planetary Changeoxidative strelcsh:TP368-456Ecologybusiness.industryfungifood and beveragesPhenotypic traitBiotechnologySettore AGR/03 - Arboricoltura Generale E Coltivazioni Arboreelcsh:Food processing and manufacturephytoene desaturaseplastid healthCRISPR-Cas9nut cropsRootstockbusinesslcsh:Nutrition. Foods and food supplyAgronomy and Crop ScienceHickory nutFood Science
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Light trapping by plasmonic nanoparticles

2020

Abstract Metallic nanoparticles sustaining localized surface plasmon resonances are of great interest for enhancing light trapping in thin film photovoltaics. In this chapter, we explore the correlation between the structural and optical properties of self-assembled silver nanostructures fabricated by a solid-state dewetting process on various substrates relevant for silicon photovoltaics and later integrated into plasmonic back reflectors. Our study allows us to optimize the performance of nanostructures by identifying the fabrication conditions in which desirable circular and uniformly spaced nanoparticles are obtained. Second, we introduce a novel optoelectronic spectroscopic method that…

Plasmonic nanoparticlesMaterials scienceSiliconbusiness.industryPhysics::Opticschemistry.chemical_elementSettore ING-INF/01 - ElettronicachemistryPhotovoltaicsLight trapping Localized surface plasmon resonance Photocurrent enhancement Plasmon-enhanced Self-assembly Silver nanoparticles Thin film silicon solar cellsOptoelectronicsQuantum efficiencyDewettingThin filmbusinessPlasmonLocalized surface plasmon
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Au-ZnO Nanocomposite Films for Plasmonic Photocatalysis

2015

Nanocomposites based on plasmonic nanoparticles and metal-oxide semiconductors are emerging as promising materials for conversion of solar energy into chemical energy. In this work, a Au–ZnO nanocomposite film with notably enhanced photocatalytic activity is successfully prepared by a single-step process. Both ZnO and Au nanoparticles are synthesized in situ during baking of the film spin-coated from a solution of Zn(CH3COO)2 and HAuCl4. Furthermore, it is shown that this precursor solution can be formulated as a nanoink for the generation of micropatterns by microplotter printing, opening the way for the miniaturization of devices with enhanced properties for photocatalysis, optoelectronic…

Plasmonic nanoparticlesNanocompositeMaterials scienceMechanical EngineeringNanoparticleNanotechnologychemistry.chemical_compoundX-ray photoelectron spectroscopychemistryMechanics of MaterialsPhotocatalysisMethyl orangeSurface plasmon resonancePlasmonAdvanced Materials Interfaces
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Valence bands of poly(methylmethacrylate) and photoion emission in vacuum ultraviolet region

1992

Photoion and photoelectron yields were measured for poly(methylmethacrylate) in the photon energy region of 8–40 eV using synchrotron radiation. Further, the valence‐band structure was investigated with ultraviolet photoelectron spectra and valence effective Hamiltonian calculations. A significant difference was observed between the photon energy dependencies of photoion and photoelectron yields. The threshold energy for photoion emission was found to be 10.5 eV, while that for photoelectron emission was 8.5 eV, indicating holes created near the valence‐band top do not contribute to the ion emission. At the higher‐energy region, the ion emission efficiency was found to be enhanced in the ph…

PmmaValence BandsAstrophysics::High Energy Astrophysical PhenomenaGeneral Physics and AstronomySynchrotron radiationPhotoelectron photoion coincidence spectroscopyAstrophysics::Cosmology and Extragalactic AstrophysicsPhoton energymedicine.disease_causeSpectral lineX-ray photoelectron spectroscopyEv Range 10−100:FÍSICA [UNESCO]medicinePmma ; Ion Emission ; Electron Emission ; Photoelectron Spectroscopy ; Ev Range 10−100 ; Valence Bands ; Band StructurePhysics::Atomic and Molecular ClustersIon EmissionPhysics::Atomic PhysicsElectron EmissionBand StructureAstrophysics::Galaxy AstrophysicsValence (chemistry)ChemistryPhotoelectron SpectroscopyUNESCO::FÍSICAThreshold energyAtomic physicsUltraviolet
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Bi3+doping in 1D ((CH3)3SO)PbI3: A model for defect interactions in halide perovskites

2022

The recently described monodimensional hybrid pseudo-perovskite ((CH3)3SO)PbI3 exhibits complete Pb2+/Bi3+ miscibility in the B site. Heterovalent substitution imposes that charge-compensating defects are introduced in the lattice as well. This paper reports the energetics of point defects and the interaction between charge-compensating defects that occur upon Bi3+ doping in ((CH3)3SO)PbI3. Periodic DFT simulations were employed to analyze the formation energy of Pb2+ vacancies, (CH3)3SO+ vacancies, iodide vacancies, or the insertion of interstitial iodide ions. Solid solutions with a large Bi3+ content were modeled considering different charge compensation defects (Pb2+ vacancies, (CH3)3SO…

Point defectLead compoundAbsorption spectroscopySolid solutionSolubilitySettore CHIM/03 - Chimica Generale E InorganicaMaterials ChemistryGeneral ChemistryOptoelectronic deviceElectronic propertie
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