Search results for "Transistor"

Extended gate electrode arrays for extracellular signal recordings

2000

Abstract We have fabricated arrays of planar gold electrodes arranged in a matrix of 8×8 with active areas ranging from 6 to 30 μm in diameter. An electronic amplification circuitry based on commercial junction field-effect transistors was used where the gold sensor fields act as extended gate electrodes (EGE) of the transistors, which leads to a new approach for long-term extracellular recording systems in vitro. The high input resistance of the amplification circuitry allows the use of small planar bare gold electrodes without further modification which therefore extends the frequency range of the measuring set-up down to the DC-level. The performance of our recording system has been test…

Organic Transistors: Supramolecular Order of Solution-Processed Perylenediimide Thin Films: High-Performance Small-Channel n-Type Organic Transistors…

2011

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

2017

Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…

The lower rather than higher density charge carrier determines the NH 3 -sensing nature and sensitivity of ambipolar organic semiconductors

2018

International audience; Despite the extensive studies and great application potentials, the sensing nature of ambipolar organic semiconductor gas sensors still remains unclarified, unlike their inorganic counterparts. Herein, different numbers of thiophenoxy groups are introduced into the phthalocyanine periphery of bis(phthalocyaninato) rare earth semiconductors to continuously tune their HOMO and LUMO energies, resulting in the ambipolar M[Pc(SPh)(8)](2) [M = Eu (1), Ho (2)] and p-type M(Pc)[Pc(SPh)(8)] [M = Eu (3), Ho (4)]. An OFET in combination with direct I-V measurements over the devices from the self-assembled nanostructures of 1-4 revealed the original electron and hole densities (…

TEMPERATURE DEPENDENT NOISY MODELS OF PSEUDOMORPHIC HEMTs

1994

From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8–16 GHz frequency range, the noisy small‐signal model of a pseudomotphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to −50 °C) by placing the device text fixture in a thermo‐controlled chamber. The model effectiveness has then been tested by determining the circuit element values at the different temperatures and by observing the model noise performance.

Nanoporous kaolin

2017

Cellulose nano- and microfibrils (CNF/CMF) grades vary significantly based on the raw materials and process treatments used. In this study four different CNF/CMF grades were combined with kaolin clay pigment particles to form nanoporous composites. The attained composite properties like porosity, surface smoothness, mechanical properties and density properties depended strongly on the raw materials used. In general, higher kaolin content (~80 wt%) led to controllable shrinkage during drying, which resulted in improved dimensional stability of composites, compared to a lower kaolin content (~50 wt%). On the other hand, the use of a plasticizer and a high amount of CNF/CMF was essential to pr…

Predictive dead time controller for GaN-based boost converters

2017

A dynamic dead time controller is presented, specifically intended to operate in synchronous boost converters based on GaN field-effect transistor switches. These transistors have a reduced stored charge with respect to silicon metal–oxide–semiconductor field-effect transistors with similar breakdown voltage and series resistance, and can operate at higher frequencies with reduced switching losses. On the other hand, the voltage drop in reverse conduction is typically more than doubled with respect to silicon devices resulting in relevant power losses during the free-wheeling phases. Therefore, dynamic control of dead time can be profitably applied even in converters operating in the tens o…

Failure Estimates for SiC Power MOSFETs in Space Electronics

2018

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. peerReviewed

Langevin Approach to understand the Noise in Microwave Transistors

2004

A noise analysis procedure for microwave devices based on Langevin approach is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. Fromthe circuit network analysis a stochastic integral equation for the output voltage is derived and fromits power spectrumthe noise figure as a function of the operating frequency is obtained. The theoretical results have been compared with experimental data obtained by the characterization of an HEMT transistor series (NE20283A, by NEC) from6 to 18 GHz at a low noise bias point. The reported procedure exhibits good accuracy, within the typical uncertainty range of any experimental de…

Random telegraph signal transients in active logarithmic continuous-time vision sensors

2015

Abstract Random Telegraph Signal (RTS) is a well-known source of noise in current submicron circuits. Its static effects have been widely studied and its noise levels are in the order of other noise sources, especially for moderate submicron transistors. Nevertheless, RTS events may produce transients many times larger than the RTS itself, and this problem seems to have not yet been addressed. In this article we present results on the transients produced by RTS events in a smart vision sensor. RTS transients in closed-loop amplifiers can be many times greater than static RTS. The duration of the RTS transient may last for several milliseconds, and can be considered almost stationary for som…