Search results for "Transistor"
showing 10 items of 234 documents
Photoelectrochemical Synthesis of Polypyrrole on Anodic Ta2O5 Films
2007
Polypyrrole film was photoelectrochemically grown on insulating Ta2O5 anodic film in acetonitrile solution. A characterization by photocurrent spectroscopy PCS of metal/oxide/polypyrrole interface was carried out. The PCS results suggest that a metallic-like PPy is formed under illumination at constant anodic potential. By polarizing the polypyrrole at cathodic potentials a photocurrent spectrum typical of p-type semiconducting film was recorded. A scanning electron microscopy study of PPy surfaces solution side and oxide side allowed us to obtain information on the morphology of the polymer as well as a rough estimate of the film thickness and of the diameter of PPy globules at the two int…
Electrochemical Fabrication of Inorganic/Organic Field Effect Transistor
2010
After discovery of conducting polymers and the possibility to modify their electrical properties (from insulating to metallic-like behaviour) by doping and a careful choice of the processing conditions, a large amount of research effort has been devoted to the theoretical understanding of their solid state properties as well as to exploit the possible application of conducting polymers in many technological fields including: large area organic electronics, polymer photovoltaic cell and sensors (1-2). Organic thin-film transistors appears very promising for the development of low cost, flexible and disposable plastic electronics. In order to reduce the operating voltage it has been suggested…
Investigation on Cascode Devices for High Frequency Electrical Drives Applications
2019
In the last years a widespread development in the market of electrical drives employing high-speed electrical machines has occurred in various industrial fields, due to the extremely high power density that can be reached. Nevertheless, to maintain output power quality without using bulky filtering networks, DC-AC converters should be controlled by means of higher PWM switching frequencies. New switching device technologies, such as Field Effect Transistors based on SiC and GaN, are therefore gathering momentum in order to comply with the higher working frequencies. To operate under high frequencies and at the same time at high voltage levels, alternative circuital configurations for switch…
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
2019
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data. peerReviewed
Advanced nonlinear signal processing in silicon-based waveguides
2015
This talk presents recent progress in optical signal processing based on compact waveguides fabricated mainly using silicon germanium alloys. Applications include supercontinuum generation, wavelength conversion and signal regeneration.
Theoretical Evaluation of [V IV (α-C 3 S 5 ) 3 ] 2– as Nuclear-Spin-Sensitive Single-Molecule Spin Transistor
2017
In a straightforward application of molecular nanospintronics to quantum computing, single-molecule spin transistors can be used to measure nuclear spin qubits. Conductance jumps accompany electronic spin flips at the so-called anticrossings between energy levels, which take place only at specific magnetic fields determined by the nuclear spin state. To date, the only molecular hardware employed for this technique has been the terbium(III) bis(phthalocyaninato) complex. Here we explore theoretically whether a similar behavior is expected for a highly stable molecular spin qubit, the vanadium tris-dithiolate complex [VIV(α-C3S5)3]2–. We consider such a molecule between two gold electrodes an…
Vanadyl dithiolate single molecule transistors: the next spintronic frontier?
2018
The role of Chemistry in the road towards quantum devices is the design of elementary pieces with a built-in function. A brilliant example is the use of molecular transistors as nuclear spin detectors, which, up to now, has been implemented only on [TbPc$_2$]$^-$. We argue that this is an artificial constraint and critically discuss the limitations of current theoretical approaches to assess the potential of molecules for their use in spintronics. In connection with this, we review the recent progress in the preparation of highly coherent spin qubits based on vanadium dithiolate complexes and argue that the use of vanadyl dithiolates as single molecule transistors to read and control a trip…
Atypical transistor-based chaotic oscillators: Design, realization, and diversity
2017
In this paper, we show that novel autonomous chaotic oscillators based on one or two bipolar junction transistors and a limited number of passive components can be obtained via random search with suitable heuristics. Chaos is a pervasive occurrence in these circuits, particularly after manual adjustment of a variable resistor placed in series with the supply voltage source. Following this approach, 49 unique circuits generating chaotic signals when physically realized were designed, representing the largest collection of circuits of this kind to date. These circuits are atypical as they do not trivially map onto known topologies or variations thereof. They feature diverse spectra and predom…
Suspended single-electron transistors: Fabrication and measurement
2005
We have fabricated aluminum single-electron transistors in which the island is not in contact with the substrate. This new type of device, which can be called suspended single-electron transistor (SUSET), displayed well-defined I-V and dI/dV-V features typical for high-quality standard SET's.
Proximity-induced Josephson-quasiparticle process in a single-electron transistor
1998
We have performed the first experiments in a superconductor - normal metal - superconductor single electron transistor in which there is an extra superconducting strip partially overlapping the normal metal island in good metal-to-metal contact. Superconducting proximity effect gives rise to current peaks at voltages below the quasiparticle threshold. We interpret these peaks in terms of the Josephson-quasiparticle process and discuss their connection with the proximity induced energy gap in the normal metal island.